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Patrick Mahomes tossed two TDs in Week 3
Kansas City Chiefs quarterback Patrick Mahomes completed 20 of 24 passes for 246 yards, two touchdowns and one interception in Week 3
Patriots bench Drake Maye after 3-turnover outing against Jaguars
The Patriots pulled their starting quarterback in the fourth quarter.
Aleksandar Vucic: from Milosevic minister to long-serving Serbian statesman
The dominant force in Serbian politics for over 14 years, Aleksandar Vucic climbed from the wreckage of strongman Slobodan Milosevic's cabinet to the centre of power using his brand of populist nation...
Donte Jackson ruled out with concussion
Los Angeles Chargers cornerback Donte Jackson was ruled out for the remainder of the Week 3 game
Kosta Nedeljkovic Returns for Serbia to Hand Rangers Fitness Boost
Rangers defender Kosta Nedeljkovic has returned to action for Serbia against the Netherlands after missing four club matches through injury.
Xavi gets first win as Netherlands boss, Denmark beat Wales
The Netherlands gave Xavi Hernandez his first win as head coach with a 2-1 Nations League victory over Serbia in Belgrade on Sunday, while Denmark saw off Wales.In League B, Austria made it two wins from two as David Affengruber, Junior Adamu and Carney Chukwuemeka scored in a 3-1 win over Kosovo in Vienna.
Verbal altercation ends in fatal stabbing outside Downtown Las Vegas business
A man has died after being stabbed following a verbal altercation in front of a business in Downtown Las Vegas.On Saturday at around 2:51 a.m., Las Vegas Metrop
Vučić resigns as Serbia prepares for both parliamentary and presidential elections
Vučić has faced growing pressure from student-led protests
2026 Vanderbilt Football Mailbag #5: Call For Submissions
Post VANDERBILT Football and/or SEC Football questions in the comments here. The offense put us in position to get punt-blocked. …and Curtis lost his first SEC game in the Land of A Million Mascots. …and I’m sure you all have questions. Here are the rules of the mail bag: …and that’s it.
Vanderbilt football vs Georgia game time, TV channel announced
See Vanderbilt football's game time and TV info against Georgia in a Week 5 SEC road game.
Review: Control Resonant: An Impressive PC Version With Superb Scalability
Plus: optimised settings, RT recommendations and much more.
Report: Detroit Lions Interested in Trading for Joey Porter Jr.
ESPN reports the Detroit Lions have contacted the Steelers about a potential Joey Porter Jr. trade. Here is why the young cornerback fits Detroit.
QB Drew Sheridan sees system fit, special atmosphere at Pitt
Pittsburgh had Dearborn (Mich.) Divine Child quarrterback Drew Sheridan on campus for an unofficial visit on Saturday. The junior signal-caller saw the Panthers defeat Bucknell. He had been to campus in the past, but this gameday visit allowed him a different experience than his previous trips.
Germany’s Nico Schlotterbeck to sit vs. Greece
The Borussia Dortmund defender will get a day off.
Virginia bounces back, takes care of business against Delaware with 42-3 win
Quarterback Beau Pribula scored five touchdowns, helping Virginia jump out to a two-score lead on its way to a 42-3 win over Delaware on Saturday night at Scott Stadium.
Are your muscles thanks to a 47,000-year-old gene? Scientists stunned by discovery - Futura-Sciences
A genetic handshake across millennia The interbreeding between Neanderthals and modern humans didn’t just give anthropologists lots to write about—it left functional traces in our very DNA. An August 5th study published in the journal Current Biology shines a spotlight on one especially eye-catching legacy: a variant of the gene...
Vikings Offensive Solution Identified for Matching Productive Defense
With the running game sidelined by injuries, quarterback Kyler Murray must lean on red zone threat Jauan Jennings to finally unlock a stagnant offense against Tampa Bay.
Unique health advice shared at Wellness Expo
Community health practices continue to evolve through the years, and the Derby Recreation Commission is focused on addressing that through its annual Wellness Expo. The fourth edition was recently held
Unique health advice shared at Wellness Expo
Community health practices continue to evolve through the years, and the Derby Recreation Commission is focused on addressing that through its annual Wellness Expo. The fourth edition was recently held
Arsenal star takes aim at Havertz-less Germany
Christos Tzolis helped Greece to a comeback win over Serbia and now turns his attention to Germany, who will be without Kai Havertz.Photo by Clive Rose/Getty ImagesChristos Tzolis is ready for Germany...
Schlotterbeck not listed in Germany's squad for match against Greece
Defender Nico Schlotterbeck will not play Germany's Nations League match against Greece on Sunday evening, according to the squad list published by UEFA ahead of the game. Coach Jürgen Klopp had to remove one player from his 24-man roster as regulations allow for only 20 field players and three goalkeepers.
Hauser Mental Health in Aviation Act Passes the Senate
The Senate passed the Hauser Mental Health in Aviation Act and a medication transparency bill for pilots and controllers. What they change and what comes next.
Hauser Mental Health in Aviation Act Passes the Senate
The Senate passed the Hauser Mental Health in Aviation Act and a medication transparency bill for pilots and controllers. What they change and what comes next.
Hauser Mental Health in Aviation Act Passes the Senate
The Senate passed the Hauser Mental Health in Aviation Act and a medication transparency bill for pilots and controllers. What they change and what comes next.
Fernando Alonso Says Car Is Improving Despite Starting in P19
The Spaniard suffers a lock-up in Q1 that leaves him nineteenth and he will start last due to engine penalties. He acknowledges that the AMR26 has improved in the corners but warns that the lack of top speed is an insurmountable burden in Azerbaijan.
The best NFL free agent quarterbacks available
A number of NFL teams may be looking to free agency for added depth after early season quarterback injuries.
Tottenham's maximum possible Richarlison fee in January revealed
Richarlison in training for Tottenham, with Roberto De Zerbi in a circular inset
Netherlands XI vs Serbia – Predicted lineup and team news
On Sunday, the Netherlands will press ahead with their UEFA Nations League campaign as they travel to Belgrade to take on Serbia at the iconic Stadion Rajko Mitić.The Dutch side arrives in Serbia rid...
Serbia vs Netherlands – Match preview and team news
Netherlands will continue their UEFA Nations League journey on Sunday as they face Serbia in their next match away from home at the Stadion Rajko Mitić.Serbia vs Netherlands – Match preview and te...
Virginia bounces back, takes care of business against Delaware with 42-3 win
Quarterback Beau Pribula scored five touchdowns
Ireland's Controversial Nations League Fixtures: The Inescapable Connection Between Sport And Politics
On Sunday, the national men’s European football teams of Israel and the Republic of Ireland will face each other at a stadium in Hungary. A week later, they will meet once more, this time in Serbia. The very existence of these two games has created a lot of controversy, especially among Irish fans. Politics related […] The post Ireland’s Controversial Nations League Fixtures: The Inescapable Connection Between Sport And Politics appeared first on Stadium Rant.
Virginia bounces back, takes care of business against Delaware with 42-3 win
CHARLOTTESVILLE, Va. (AP) — Quarterback Beau Pribula scored five touchdowns, helping Virginia jump out to a two-score lead on its way to a 42-3 win over Delaware on Saturday night
Virginia bounces back, takes care of business against Delaware with 42-3 win
Quarterback Beau Pribula scored five touchdowns, helping Virginia jump out to a two-score lead on its way to a 42-3 win over Delaware at Scott Stadium.
Maryland football destroyed by UCLA, 54-3, in 9th straight Big Ten loss
COLLEGE PARK, Md. — Maryland was outclassed from the start. In a game that was scoreless after one quarter but quickly devolved into another lopsided loss, nothing went the Terps’ way. Maryland couldn’t establish a running game despite a questionable insistence on doing so; quarterback Malik Washington never got going in the one-dimensional offense and threw four interceptions; and the Terps’ ...
Jets' Geno Smith punished by NFL right before Lions game
Just hours before the New York Jets and Detroit Lions game, the NFL announced a punishment for Jets quarterback Geno Smith.
Justin Herbert's brother set to make NFL debut for Chargers
Meet the Chargers newest tight end.
Thunderbirds visit Monterey mental health facility to inspire youth
A U.S. Air Force Thunderbirds pilot and team members visited Ohana, a mental health facility in California, to share messages of teamwork, perseverance, and hope with young patients.
Jaguars will have new backup quarterback vs. Patriots
The Jaguars are elevating a LB for their Week 3 matchup and they'll also have a new backup QB this week.
Deonte Banks’ injury could leave the Giants thin at corner
The Giants already placed cornerback Paulson Adebo on injured reserve. Now Deonte Banks is questionable for Sunday’s game against Tennessee […]
Deion Sanders benches Julian Lewis, revives Colorado’s biggest problem
Deion Sanders benched Julian Lewis at Baylor, extending Colorado's post-Shedeur quarterback uncertainty as Isaac Wilson got his chance.
Lions Get Surprisingly Promising Update on $86M All-Pro
Detroit Lions head coach has been ominous when it comes to the potential return of safety Kerby Joseph. During his most recent interview with 97.1 The Ticket, he noted that he was not sure what could change for Joseph to see the field this season. However, NFL Insider Tom Pelissero of The Ringer shared a […] The post Lions Get Surprisingly Promising Update on $86M All-Pro appeared first on HEAVY.
Bills news: Previewing the Chargers
Josh Allen and the Bills are rolling on offense, while Justin Herbert and the Chargers are sputtering to start the year.
Intel Panther Lake Teardown, 18A, BSPD, GAAFET, SemiAnalysis STEEL
Panther Lake debuts the first commercial implementation of backside power delivery (BSPDN), introduces Intel’s first iteration of gate-all-around (GAA) transistors, and showcases their advanced packaging capabilities with its Foveros-S assembly. With Panther Lake, Intel’s manufacturing arc has shifted from nebulous roadmaps to shipped silicon, a significant milestone on their long road back to competitive semiconductor manufacturing. To evaluate the extent of Intel’s comeback, we tore down Panther Lake. The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page. Our teardown traces 18A from its four-sheet RibbonFETs (Intel’s marketing name for GAAFETs) and gate stacks through contacts, frontside and backside wiring, and the bonded carrier. We explain how these material and integration choices improve gate control and reduce resistance, while adding capacitance, thermal resistance, and process complexity. Our measurements put Panther Lake’s 18A compute logic and TSMC N3E GPU logic at similar logic density. However, 18A does not lead TSMC N3P, N2 or Samsung SF2 in peak density. Panther Lake’s CPU cores are incremental updates, and the high-end GPU still uses TSMC N3E. Panther Lake assembles one compute tile, one GPU tile, and one I/O tile atop a passive base tile using Intel’s Foveros-S advanced packaging. Both compute tile variants use Intel 18A. The Xe3 GPU options are a 4-core GT1 tile on Intel 3 and a larger 12-core GT2 tile on TSMC N3E. Both I/O tile variants use TSMC N6. [1], [2] Our analysis centers on the PTL-U compute tile, both the 4-core and 12-core GPU tiles, as well as the 12-lane I/O tile. In conventional chips, power and signal are routed through the same frontside metal stack towards the device frontend. Power rails consume scarce routing resources near the transistors, while tall via stacks carry VDD and VSS from the coarse upper wires to local rails. Backside power delivery (BSPD) moves the main power network behind the transistor layer, to the backside, separating it from frontside signal routing. We covered BSPD and its impacts in 2024. [3], [4], [5] Intel’s BSPD implementation, branded as “PowerVia”, routes power through dedicated backside metals to nano-TSVs, which connect those rails to local source/drain (S/D) contacts. Implementing that separation requires Intel to build the interconnect stacks from both sides of the wafer. The frontside comprises the M0-M14 signal stack, while the backside comprises the BM0-BM5 power stack. M0 and BM0 are closest to the transistors. The nano-TSVs connect the two sides, but Intel patterns and etches each via from the front after forming the contacts. A narrow via runs from the side of the contact deep into the silicon substrate. Intel then completes the frontside signal metal stack, bonds the wafer to a carrier, flips it and removes the original substrate until the buried via tips are exposed. The backside metal stack is then deposited directly on the revealed vias. The nano-TSV and backside-via profiles taper in opposite directions because Intel forms them from opposite sides of the wafer. The transistor structures form the FEOL. Local contacts and nano-TSVs connect them to the wiring. M0 begins the frontside interconnect stack. The silicon carrier remains attached above the frontside interconnects. It supports the device wafer during substrate removal and backside processing and remains part of the finished chip’s thermal path. PowerVia removes the main power distribution from the congested frontside metals, routing supply through shorter and wider backside wires. Its lateral landing still occupies area in the standard cell, so it recovers less cell area than a direct backside contact. [3] Nano-TSVs beside the logic devices carry VDD or VSS from the backside power network, while signal connections continue upward through the frontside metals. Backside Interconnects Samsung SF2 data is included for comparison to Panther Lake’s within this article. SF2 is the incumbent GAA foundry node but lacks BSPD, serving as a useful reference to evaluate 18A. A full teardown of Samsung’s S26 products, processed on SF2, will be shared soon.Nanosheet-cut EDS comparison. The PowerVia supply path runs from the backside Cu rails through Mo-lined W nano-TSVs to the local transistor contacts. In this cross section, the tapered connection spans roughly 150 nm from the contact level to BM0. The Ta liner confines Cu and promotes adhesion to the surrounding stack; the AlOₓ etch stop controls the next dielectric etch above the rail. Dielectric beneath the ribbons electrically separates the devices from the backside wiring and removes the conducting silicon body below the channel. [6] AlOₓ serves as an etchstop (ES), enabling endpointing and protecting the underlying layers. Low-volatility aluminum fluoride reaction products resist the fluorinated plasma, allowing a thin AlOₓ film to protect the metal while the surrounding low-k dielectric is removed. [6], [7]. While the BM0 and layers above the M1 lines show double AlOx layers, Our SMIC N+3 teardown showed single AlOₓ layers. SMIC uses a simpler local AlOₓ substack, while the remaining cap and etch sequence provide the required landing protection. So why double layers? The closely spaced AlOₓ doublets provide two protected endpoints in the etch sequence. Intel documents an AlOₓ/SiN/AlOₓ stack that explains the benefit. The main dielectric plasma etch stops on the first AlOₓ film; a selective wet clear opens that film; a second plasma etch removes the intermediate SiN and stops on the second AlOₓ film. The final wet clear exposes the metal landing surface. SiN is the intermediate dielectric in Intel’s published example. [8] The second stop protects the metal through a cap breakthrough. Wide openings can etch faster than narrow ones, and etch depth varies across the wafer. Metal under an early-clearing opening would otherwise be exposed while other openings still need more etching. Staged protection widens the process window and reduces metal erosion, corrosion and void formation. [8] TSMC documents AlN/AlOₓ/SiOC/AlOₓ above Cu, with AlN blocking Cu diffusion, and a simpler AlN/SiOC/AlOₓ variant that omits one AlOx film. [9] Levels with different opening sizes, aspect ratios, pattern densities and cap materials need different etch margins. A double AlOx stop is useful where another protected endpoint justifies the added processing. The extra film adds formation, selective opening and cleaning steps, plus another set of interfaces to control adhesion, moisture, and stress. These blanket films are opened through the existing via pattern, so each film does not require another lithography mask. AlOₓ adds parasitic capacitance when it replaces lower-k dielectric; two thin AlOₓ films can nevertheless contain less AlOₓ than one thick film. Total thickness, placement, and theintermediate dielectric determine the electrical cost. Deposition chemistry also changes AlOx permittivity and residual hydroxyl content, which can oxidize the underlying metal. [7], [8], [10], [11] The backside stack separates into relatively fine BM0-BM2 wiring near the devices and coarser BM3-BM5 power distribution. The largest pitch increase occurs between BM2 and BM3. BM0’s pitch closely matches the logic-row height, fitting local power delivery to the cell rows. Higher levels aggregate current through larger conductors: routing density becomes less important than low resistance and current capacity as the network approaches the package. This hierarchy provides wide power wiring for the power delivery network without consuming scarce frontside signal-routing resources. [3] The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page. Frontside Interconnects Intel 18A combines Mo-lined W contacts and nano-TSVs with a separate backside Cu power network. Samsung SF2 keeps power on the frontside, using Ti-based contact interfaces and Ta-based barriers and Co liners around Cu wiring. In 18A standard-cell rows, backside power rails supply the devices through nano-TSVs within the cells, freeing frontside routing resources. Samsung’s M0 accommodates both power and signal connections. From the device toward M0, the connection runs through a Ti-based S/D interface, W contact fill, a Mo-lined W via, and the Cu M0 wire. Mo supplies a conductive nucleation and adhesion layer for W, replacing the resistive TiN liner used in conventional W integration. This increases the effective conduction volume within the feature while retaining W fill and its established polishing, cleaning and etching processes. Intel’s Mo/W patent describes this integration tradeoff. The nano-TSV uses the same Mo-lined W construction in the backside supply path. [12] The move from TiN to Mo is an incremental change. While a full Co or Mo fill can also reduce the volume lost to liners in very small features, it requires new integration schemes that increase complexity and risk. Cu remains attractive for wider wires due to its low resistance. As wires and vias shrink, the diffusion barrier consumes an increasing fraction of their cross-section. [12], [12], [14] Intel uses Co/Ru liners at M0-M1, Co at M2-M4, and Nb at M5-M9. The lower-level liners help Cu adhere and reduce void formation during trench fills. Applied Materials’ Endura has new thermal control that facilitate wetting process, so the thin film continuity is good enough that good capillary pressure will drive Cu atoms to the via bottom without voiding. Intel’s choice to use Nb is particularly interesting. Intel’s Nb patent describes a conductive diffusion barrier intended to reduce the barrier’s contribution to resistance relative to conventional Ta-based barriers, particularly at via bottoms where all current crosses the barrier. The patent pairs Nb in coarser levels with the option of lower-cost PVD processing. [15], [16] The upper metal layers support thicker barriers formed through physical vapor deposition (PVD) despite its worse coverage and uniformity. Meanwhile, the lower metal layers require thinner barriers deposited through conformal atomic layer deposition (ALD). Co/Ru adds another material interface and requires controlled deposition and Cu fill. Changing liners and barriers by metal layer allows Intel to optimize interconnect resistance, process complexity, and reliability. [15, 16] RibbonFET, Intel’s name for its gate-all-around FETs (GAAFETs), replaces the FinFET’s vertical fins with four stacked horizontal silicon nanosheets, allowing the gate to surround the channel on every side. The path to GAAFET begins with the planar transistor. A planar MOSFET places the gate above the channel between its source and drain. Pairing an NMOS with a PMOS transistor creates a CMOS inverter, in which the NMOS pulls the output low for a high input, and the PMOS pulls it high for a low input. The gate must retain electrostatic control of the channel to ensure clean switching. As gate lengths shrank, the drain began to compete with the gate for that control, increasing off-state leakage. Electrostatic control was restored through an architectural evolution that raised the channel into a vertical fin and wrapping the gate around three sides. Called “FinFET”, this new architecture packed more effective channel width into a smaller footprint. Further scaling made it harder to maintain both drive current and leakage within smaller cells, and reintroduced the same problems planar MOSFETs faced. Nanosheet GAAFETs close the fourth side by replacing the vertical fin with a stack of horizontal nanosheets, each surrounded by the gate. The tighter electrostatic control suppresses leakage at shorter gate lengths while stacking adds effective channel width within the cell footprint. In a FinFET process, channel width changes in discrete steps as designers must add or remove whole fins. Nanosheet width can instead be adjusted continuously within the process’s design rules. Wider sheets increase drive current, while narrower sheets reduce capacitance at the cost of drive current. Intel 18A uses stacks of four nanosheets each and varies their widths across logic and SRAM. At the process level, adding more sheets to each stack increases effective channel width and drive current, but complicates fabrication. RibbonFET vs MBCFET Samsung began GAAFET production in 2022 with SF3E, following with SF3 and now SF2. Its ‘MBCFET’ provides a useful structural comparison with Intel’s first RibbonFET implementation. [17] STEEL is digging deeper into SF2, used in the Exynos 2600, and TSMC’s GAAFET N2, used in Apple’s A20 Pro, in upcoming newsletter articles. We’re throwing some teasers on X. Let’s compare Samsung SF2’s MBCFET with Intel 18A’s RibbonFET. Subscribe Even to the untrained eye, Intel’s extra nanosheet is obvious. Intel stacks four ribbons to Samsung’s three. Samsung’s sheets are much wider in these fields, so both sheet count and width matter to the available channel perimeter. Sheet width also changes which silicon surfaces carry current. On conventional (001) silicon, wide nanosheets emphasize the broad top and bottom surfaces, favoring electron transport; the larger sidewall contribution in a narrow sheet favors hole transport. Thinner sheets improve gate control but increase confinement and scattering. This makes width and thickness part of the NMOS/PMOS balance, alongside strain and threshold voltage. [18], [19] GAAFET designs like 18A use different work-function-metal (WFM) stacks for NMOS and PMOS. Around each ribbon, a thin SiOx interfacial layer separates the silicon channel from the HfOx high-k dielectric, with La providing dipole tuning and the WFM wrapping the dielectric. NMOS uses a TiAl-based stack, while PMOS uses TiN WFM. W fills the remaining gate trench, providing a lower-resistivity path where the work-function layers are no longer needed. In this field, the PMOS stacks leave room for W between ribbons, while the NMOS stacks occupy more of those gaps. A silicon-based dielectric marks the P/N boundary, allowing the PMOS and NMOS gates, sharing the same gate trench, to be processed sequentially. Fast logic paths, retention circuits, and SRAM need a family of threshold options. Changing threshold without substantially changing device dimensions, capacitance or fabrication complexity is valuable. FinFET processes typically use different work-function-metal stacks. In a four-ribbon GAA stack, the narrow sheet-to-sheet gap limits how much WFM can fit around each channel. La in the gate dielectric creates interfacial dipoles at the SiOx/HfOx boundary, shifting effective work function and tuning threshold voltage. This gives Intel another control alongside its NMOS and PMOS WFM stacks. Low-threshold devices improve critical-path drive; higher thresholds reduce leakage elsewhere. Dipole tuning is especially useful in GAA because it changes threshold without consuming the narrow intersheet gap with thicker WFM. Precise control of La incorporation, diffusion and interface quality has long been a challenge, limiting viability in high volume production but is now seen from every leading-edge foundry. Intel’s patent describes depositing a dipole-forming oxide above HfOx and annealing it toward the interfacial oxide before completing the work-function and fill metals. This separates threshold tuning from the space available for metal. Newer research addresses the thermal cost: imec’s 2026 dipole-middle research inserts the shifter between two HfOx depositions, shortening the diffusion path while protecting SiOx during patterning. [20], [21]Matched-cut EDS, Intel 18A (left) vs. Samsung SF2 (right). Intel retains raised source/drain epi beneath its contacts, while Samsung recesses W deep into the epi to form a V-shaped Ti-lined interface. The deeper contact increases metal-to-semiconductor area and shortens the current path from the lower sheets, reducing contact and spreading resistance. It also removes epi volume and brings the contact etch closer to the channel ends. Retaining more epi preserves the material available for strain transfer, especially from SiGe into PMOS. These geometries balance contact access against stress engineering and etch margin. [22], [23] Samsung stacks three sheets to Intel’s four ribbons, and both processes use sheet width to tune drive strength. In our Samsung cross-sections, widths range roughly from 19 to 30 nm in the NPU rows and 37 to 50 nm in the CU cell. The Samsung nanosheets taper, with the widest sheet at the bottom and the narrowest at the top. Both processes use HfOx gate dielectric and Ti-based work-function stacks, with Al in the NMOS stack. In the Samsung devices shown here, the dielectric and WFM occupy the intersheet gaps, leaving W above the top sheet. Intel’s PMOS stack leaves more room between ribbons, and W fills those gaps while the thicker NMOS stack leaves W mainly in the upper trench. Gate-stack EDS maps. The W between Intel’s PMOS ribbons provides a conductive path close to the lower gates. Where WFM fills the entire gap, the gate still surrounds the channel, but voltage reaches it through the more resistive work-function films. Thinner WFM and dipole tuning preserve room for low-resistivity fill; Mo and Ru are alternative fill metals being developed for further scaling. [24] A masked, sequential WFM flow explains the different gate heights and inter-nanosheet fill. The proposed sequence below shows how separate NMOS and PMOS work-function steps produce that geometry. Enabled by the BSPDN process, Intel replaces the dense-logic silicon subfin with dielectric, removing the parasitic conduction path below the ribbons and reducing substrate-related capacitance. A retained silicon body as in classical, non-SOI, planar and FinFET designs needs junction and punchthrough-stop engineering to suppress leakage. Dielectric isolation makes that leakage less sensitive to the subfin doping profile but adds removal and fill steps. It also weakens the direct thermal path through silicon, making the contacts, metal stacks and package more important for heat extraction. [24], [26] Fluorine is concentrated around selected Intel device structures in the maps. WF6 is a standard precursor for W nucleation and fill, while barrier films protect adjacent dielectrics from fluorine attack. Low-fluorine W processes reduce the residual-F burden. Chloride-based precursors avoid introducing F during W deposition, but require control of chlorine attack, nucleation and fill quality. The integration target is a continuous, low-resistance W path with a thin protective liner and minimal chemical damage to the surrounding stack. [20], [27], [28] The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page. We measured cell height, gate pitch, metal geometry, and ribbon dimensions at the XTEM sites shown below. The tables group these dimensions by site and device polarity. Our “sheet cuts” cross the silicon channel and show the ribbons end-on. “gate cuts” run along the channel through successive gates. The 18A logic cell dimensions point to a five-track logic library while the N3E and Intel 3 cell dimensions evidence a seven-track logic library. The DDR-PHY uses wider M0 wires and much larger spacing than core logic. That trades routing density for lower wire resistance and weaker coupling between neighboring nets. The geometry suits the current delivery and coupling requirements of analog, clock, and I/O circuitry. PowerVia lets 18A combine a compact cell height with wider M0 geometry by moving the main power rails off the signal-routing tracks. That relaxes local wire scaling while preserving a small cell footprint. Cell height and gate pitch set the geometric density; pin access and routability determine how much of it a real block can use. [29] The biggest takeaway from our gate-pitch measurements is that Intel 18A compute logic and TSMC N3E GPU logic have similar density in the Bohr representative-cell model. The 18A example is 18.6% denser than the Intel 3 GPU example. Gate pitches are nearly identical across the three sites, so cell height drives most of the difference. The Bohr model combines a four-transistor NAND2 spanning three gate pitches and a 32-transistor scan flip-flop (SFF) spanning nineteen pitches, weighting their densities 60:40. The sensitivity column shows how independently changing cell height and gate pitch by ±1 nm changes the result. This compares representative cell geometries; whole-die density also depends on cell mix and placement. The 18A P-core gives M0 substantially more metal cross section than the N3E vector engine. Treating each profile as a trapezoid gives 2.63 times the area per line and 1.84 times the area after normalization by routing pitch. The larger section reduces the geometric contribution to line resistance and lowers current density for a given current. Taller and wider wires also add capacitance, so circuit delay depends on the balance of resistance and capacitance. The DDR-PHY has less metal area per routing width than the 18A core fields, while remaining above N3E. [30] Area = height × (top CD + bottom CD) / 2, including liners. Area/pitch normalizes by routing width. Taper is the symmetric sidewall angle from vertical, with the largest angle belonging to the DDR-PHY. Compute tile The measurements show how ribbon dimensions and gate-stack geometry vary across the compute tile and between NMOS and PMOS to balance channel drive, gate load and the space needed for the dielectric/WFM stack across logic, SRAM and the DDR-PHY. Width mainly changes available channel perimeter; thickness also changes electrostatic control and carrier confinement. Gate-stack thickness then determines the space left for low-resistivity fill P-core and LP E-core logic Both the P-core and LP E-core use multiple nanosheet widths. Widths are measured on high-magnification XTEMs while wider-field images demonstrate additional width choices within the LP E-core. Multiple widths are expected even within an LP E-core. Timing-critical paths, buffers and cells with different fanout need different drive strengths. The lower-magnification fields show this width diversity beyond the sites quantified in the table. L2 and L3 SRAM GAA gives SRAM designers another way to balance the pull-up (PU), pass-gate (PG), and pull-down (PD) transistors. FinFET bitcells set device strength through fin count while GAA adds nanosheet width as a sizing knob. In a 6T SRAM cell, a strong pull-down relative to the pass-gate limits read disturbance, while a strong pass-gate relative to the pull-up improves writability. During a write, the pass-gate and write driver pull the node storing “1” below the inverter trip point. During a read, the pull-down holds the node storing “0” low. Bias, threshold voltage, mismatch and assist circuitry set the remaining margin. FinFET high-current cells commonly use a PU:PG:PD fin-count pattern of 1:2:2, a device-sizing ratio rather than a current ratio. Ribbon width lets Intel balance SRAM strengths without adding whole fins. The L2 cell uses its narrowest ribbons for PU and widest for PD, improving writability and read stability respectively. Intel’s disclosed HCC operates without assist; its denser HDC uses negative-bitline write assist. Pulling the selected bitline briefly below ground increases pass-gate overdrive so it can overpower the pull-up at lower supply voltage. That buys density and low voltage writability at the cost of boosting circuitry, switching energy, and additional voltage stress that must be controlled. [31], [32] Four rectangular ribbons give the perimeter = 8 × (width + thickness), before corner rounding. PG/PU is 1.49 and PD/PG is 1.16. The L3 structures closely resemble L2 in layout and cell height. Fewer L3 nanosheet widths are tabulated because fewer high-magnification images were available. DDR PHY The DDR-PHY trades density for controlled analog behavior and reliable off-chip signaling. It contains drivers, receivers, delay circuits, and calibration logic that set drive strength, sampling time, and voltage margin. Repeated four-sheet devices with similar widths fit the use of regular transistor units for matching and programmable drive. Its wider local wiring provides room for current delivery and separation of sensitive signals, while consuming more area than a dense core-logic grid. The layout serves the memory channel’s electrical requirements as well as digital logic density. [33] The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page. Intel 3 GPU devices Vector engine logic Intel 3’s XVE logic uses two-fin PMOS and NMOS devices with power rails in M0. Its cell height and M0 pitch give a seven-track geometry, two tracks more than the 18A logic. One-fin groups also appear among the two-fin devices. Intel 3 L2 SRAM The Intel 3 L2 SRAM uses the familiar HCC sizing pattern: one PU fin, two PG fins, and two PD fins. N3E GPU devices Vector engine logic The N3E XVE field contains repeated two-fin devices with seven-track cell geometry. N3E remains a FinFET process, giving Panther Lake a direct FinFET-to-RibbonFET comparison. N3E L2 SRAM The N3E L2 SRAM uses the same PU:PG:PD fin-count pattern of 1:2:2. Panther Lake-U follows Lunar Lake’s floorplan quite closely. Both pair 4 P-cores with 4 LP E-cores and NPU, media and display engines in similar locations. Lunar Lake also uses Xe2, the direct predecessor to Panther Lake’s Xe3 GPU. This makes Lunar Lake the most direct basis for our comparisons. Arrow Lake differs in core count and uses the older Xe-LPG GPU architecture, so we only use it where it offers a more direct component-level comparison. Compute tile Panther Lake compute-tile floorplans remain sparse even months after launch. Intel 18A’s backside metal and dielectric stack must be removed without damaging the underlying structures before a clean transistor-level floorplan can be imaged. Most published die shots hide or heavily process the background, but we are quite proud of the die shot we achieved and are excited to show the work we have done. We measured the areas of the key components on the compute tile and compared them with their Lunar Lake predecessors on TSMC N3B. These help us to capture changes in block area and compare the two chips across process nodes and designs. Our total tile areas exclude the scribe-line area. The compute-plus-GPU subtotal below uses the PTL-U compute tile and GT1 GPU; it excludes the I/O tile and passive base. Individual block areas use the boundaries marked on the floorplans The compute-plus-GPU row is recomputed from the displayed PTL-U and GT1 areas. Component rows use their stated per-region counts and are not an additive partition of the whole tile. The P-core area remains almost unchanged between Lunar Lake and Panther Lake, despite L2 capacity increasing from 2.5 MiB to 3 MiB. Arrow Lake uses the same Lion Cove core as Lunar Lake but also has a 3 MiB L2. Cougar Cove fits 20% more L2 into the same P-core area. The larger private cache keeps more of each core’s working set close to its execution units, reducing access to shared L3 and DRAM. Extra capacity adds storage leakage and lookup energy, so designers balance it against avoided lower-level accesses. The shared P-core L3 cache also shrank by 14.8%. [2] Cougar Cove combines a similar footprint with Intel’s reported power-efficiency improvements. RibbonFET’s tighter channel control reduces leakage, while PowerVia reduces supply droop and allows tighter voltage guardbands. [1] Darkmont’s four-core LP E-core cluster is 5.0% smaller than Skymont’s on Lunar Lake, with most of the reduction in its L2 regions. The 1 MiB region shrank by 8.4% and the 1.5 MiB region by 14.9%. The tag arrays also use one fewer visible row. Tags identify which memory addresses the data array holds, so rearranging them changes the cache’s layout and wiring without requiring less data capacity. [2] The LP E-cores share one L2. This pools capacity and avoids duplicating all the cache machinery, but the four cores contend for its banks and bandwidth. Their separate cluster also keeps light work away from the performance cluster and its L3, allowing that larger domain to sleep. [1], [2] Cache area includes more than the storage cells. Tags identify each line, decoders select rows, sense amplifiers read the small bitline signal, and wires connect to the banks. Splitting an array into smaller sections shortens wordlines and bitlines, improving access speed, but duplicates peripheral circuits. Panther Lake’s smaller cache regions therefore reflect the complete memory implementation, including how much of each region is devoted to storage. [34] Unlike Meteor Lake and Arrow Lake, Panther Lake has no separate SoC tile. The NPU, LP E-cores, memory controllers, PHYs, media and display engines now share the compute tile. This removes an active die and keeps CPU memory traffic on one die. The cost is moving PHY and I/O-related circuitry onto 18A: drivers, receivers and analog circuits must still meet external voltage, loading and signal-integrity requirements, so their area does not shrink like dense digital logic. [1], [2] The biggest shrink comes from the NPU, which occupies 36.9% less area. NPU 5 consolidates the same total INT8 MAC count into half as many neural compute engines. Each of the three NCEs has a larger MAC array to make the complete NCE envelope 22.6% larger than an NPU 4 engine. Consolidation also halves the number of scratchpads and SHAVE DSPs, from 12 to 6. The MAC array handles matrix multiplication and convolution, while SHAVE executes vector and custom operations that fit the array poorly. [1], [2], [35] The paired floorplans identify each NCE envelope and its scratchpad, MAC, and SHAVE regions. Each measured MAC polygon is counted once per NCE in the area accounting below. The scratchpads store weights, activations, and intermediate results near the MAC arrays, allowing repeated use without fetching them again from DRAM. Halving their number delivers the largest measured area saving but leaves less local storage for the same total MAC count. Layers that no longer fit locally require smaller working tiles or more transfers of intermediate data. The benefit depends on keeping the enlarged arrays busy while managing that tighter storage budget. [36] NPU 5 also adds native FP8. Using half the operand width of FP16 reduces storage and transfer demand, helping workloads fit the smaller local memory budget. Lower precision and format-dependent range make scaling and model validation part of deployment. Hardware activation functions further reduce work that would otherwise occupy the programmable DSPs. [1], [2] Microsoft requires an NPU to deliver at least 40 TOPS for Copilot+ PCs. Both Lunar Lake and Panther Lake meet this threshold, but Panther Lake uses significantly less silicon. GPU tiles Panther Lake is Intel’s first product with Xe3, its latest GPU architecture. It offers two different GPU tiles: a smaller GT1 tile with 4 Xe3 cores on Intel 3 and a larger GT2 tile with 12 Xe3 cores on TSMC N3E. Panther Lake allows us to compare the same GPU architecture across both Intel 3 and TSMC N3E. Wildcat Lake adds a third Xe3 implementation on Intel 18A. A future newsletter will detail Xe3 and its implementation differences across all three process nodes. GT2 scales Xe3 to a different physical layout, with render slices arranged vertically instead of GT1’s horizontal arrangement. Slice placement sets the distances to shared cache banks and the D2D interface. Those wires consume area and add delay, so scaling the number of Xe cores also requires a new balance of cache placement, routing and timing. [1] What’s immediately obvious is that the GT2 tile on TSMC N3E has much smaller Xe cores than GT1. These block areas include logic, caches, and routing. An Xe core on the GT1 tile is ~69% larger than one on Lunar Lake, and ~55% larger than one on GT2. Intel 3 therefore uses substantially more area per Xe core. The block-area gap exceeds the measured logic and SRAM density gaps, bringing routing, timing targets, cell mix, and floorplan allocation into the comparison. The measured vector/matrix engine region is almost unchanged between Lunar Lake and Panther Lake’s GT2 tile. Xe3 retains eight 512-bit vector engines and eight 2048-bit XMX engines per core. Its gains also come from feeding those engines more effectively: more resident threads hide stalls, and variable register allocation lets shaders trade registers per thread against the number of threads kept active. [1] The shared L1/SLM capacity increased by 33% from 192 KiB to 256 KiB, while its area increased only 5%, raising effective density by 27%. L1 retains reused cache lines, while software-managed SLM lets a thread group share data locally. Both reduce traffic to more distant memory. Allocating more SLM per group can also limit how many groups reside on a core at once. [1], [37] The GT1 tile carries 4 MiB of L2 against 16 MiB on the GT2 tile. GT1 divides its L2 cache into four 1 MiB banks, while GT2 uses eight 2 MiB banks. Each bank contains 128 macros, but each N3E macro stores 16 KiB, twice the Intel 3 macro’s 8 KiB capacity. The N3E macro is only 54% larger while holding twice as many bits, giving it 30% higher density: ~23.7 Mbit/mm² versus 18.3 Mbit/mm². Including bank-level circuitry, the gap widens to ~16.9 Mbit/mm² on GT2 versus ~10.4 Mbit/mm² on GT1. GT2 gains density with its macros storing more bits per unit area, and those macros occupy more of each cache bank. Larger macros spread decoder and sense-amplifier overhead across more storage, while a more compact bank layout reduces the share spent on control and routing. The compromise is longer wordlines and bitlines that carry more capacitance. [34] I/O tile Panther Lake uses two I/O tile variants, both fabricated on TSMC N6. The smaller one provides 4 PCIe 5.0 and 8 PCIe 4.0 lanes and serves lower-tier systems as well as those without a discrete GPU, while the larger one adds 8 PCIe 5.0 lanes, bringing the total to 20 lanes, for discrete-GPU connectivity. Panther Lake SKUs with the larger 10- or 12-Xe GPUs use the smaller I/O tile. [38] The smaller I/O tile adds a PCIe 4.0 block and a Thunderbolt block to Lunar Lake’s I/O layout, providing four additional PCIe 4.0 lanes and another Thunderbolt 4 port. Its repeated N6 blocks retain nearly identical areas and layouts. Reusing these proven PHYs and controllers avoids porting and requalifying external interfaces on 18A, where faster digital logic offers less benefit to circuits constrained by the off-chip link. [38] SemiAnalysis’s teardown lab (STEEL) dives deep into the world’s advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. We’re hiring technical experts from system to transistor and everywhere in between. Check out our Careers page. Panther Lake offers scalability and modularity through its disaggregated packaging that partition compute, GPU, and I/O silicon into separate tiles allowing for a suite of tile configurations. This partitioning makes the package part of Intel’s node economics as it determines how much leading-edge wafer area each product consumes, which functions can remain on other processes, and how much configuration freedom Intel can offer from a shared set of tiles. Furthermore, fabricating the compute and GPU tiles separately confines the new 18A process to the compute tile and allows graphics and I/O to use other, more established, and more cost-effective processes. For Panther Lake, the GPU and I/O tiles are assembled alongside the compute tile on a passive silicon base using Foveros-S. Intel’s current technology brief lists a nominal 36 µm pitch for Foveros-S. Through-silicon vias (TSVs) in the base connect the fine wiring above to the larger package connections below. The functional tiles sit side by side on that passive base in a 2.5D configuration. [39] Our cross-section through the compute and GPU tiles shows the package’s wiring hierarchy. Microbumps connect each active tile to the passive silicon base; its fine redistribution layer (RDL) carries the short, dense tile-to-tile links. TSVs carry connections through the base to the package substrate, which fans them out to the much coarser motherboard solder joints. The base supplies interconnect, while computation remains in the active tiles above it. [39] At the compute-tile edge, the higher-magnification inset shows a local microbump spacing of approximately 25.24 µm and a feature width of 12.33 µm. These local spacings are finer than Intel’s nominal Foveros-S value. The X-ray fields further confirm tighter neighboring bumps, consistent across every die-to-die area found on each tile. Additional X-ray analysis is offered after the paywall. Putting the memory controller beside the CPU removes the D2D transfer that CPU memory requests required in Meteor Lake and Arrow Lake. This avoids the extra transmitter, receiver, and link traversal, saving interface energy and latency. Panther Lake’s separate GPU still crosses a D2D link to reach DRAM, so its larger local caches also help contain package traffic. [1], [40] Smaller dies are less likely to contain a random fatal defect, and screening them before assembly prevents one bad tile from consuming a complete package of good silicon. Reuse also spreads design and qualification work across more products. Against those gains, Intel pays for the passive base, D2D circuits, extra bonding and test steps, and losses during assembly. Cost per working product across the portfolio captures the combined effect of wafer yield, reuse, test, and assembly. [29] Wildcat Lake packaging Intel launched Core Series 3, formerly Wildcat Lake, on 16 April 2026 for value mobile and edge systems. Wildcat Lake keeps 18A but removes the passive base and combines more functions on one die to simplify the package. The two products therefore reveal two distinct ways to commercialize the same leading-edge process. [41] Wildcat Lake’s 18A die combines up to two Cougar Cove P-cores, four Darkmont LP E-cores, two Xe3 cores and a smaller NPU. A separate platform-controller die supplies I/O, connected through UCIe, Intel’s first processor implementation of the standard. Consolidating graphics remove a tile boundary and the passive base, reducing assembly complexity for a modest-bandwidth value product. It also ties CPU and graphics scaling to the same die, giving up Panther Lake’s ability to swap in a much larger GPU. [42], [43] In July 2021, Intel CEO Pat Gelsinger set out an ambitious process roadmap aimed at regaining performance leadership by 2025, later described as five nodes in four years. Five years and one CEO later, Intel’s comeback story is not as unambiguously positive as Pat may have hoped. [44], [45] Intel once set the pace for process technology, bringing high-k metal gate technology and FinFETs into volume production years ahead of the rest of the industry. Its 22 nm FinFET process reached consumers with Ivy Bridge in 2012. [46] Intel’s integrated device manufacturing (IDM) model allowed its architects and process engineers to co-optimize products and processes. Starting with Sandy Bridge, Intel dominated x86, while AMD struggled with Bulldozer. That lead faltered at 14 nm and broke at 10 nm. Intel targeted a massive 2.7× density increase, but the node arrived years late and required several revisions before it could support Intel’s full lineup. This delay forced Intel to stretch 14 nm across six generations, while TSMC moved ahead in process technology and AMD recovered in x86. By 2019, Intel was still shipping 14 nm across most of its product stack, with its 10 nm client ramp focused on Ice Lake mobile processors. Meanwhile, TSMC was shipping N7 and N7+, and AMD’s Zen 2 compute chiplets used N7 to raise core counts and improve efficiency. Intel’s process failures were central to its decline, but unsound business decisions furthered their downward slide. Product delays compounded product mistakes, pushing client, server, and FPGA roadmaps off schedule. Several attempts to enter AI (Nervana and Gaudi) and networking (Tofino) also failed to establish lasting businesses. Intel’s recovery has focused on consumer CPUs and advanced packaging. Tiger Lake, Alder Lake, Lunar Lake and now Panther Lake have restored Intel’s consumer roadmap. On the process side, Intel 4 shipped with Meteor Lake, Intel 3 with Granite Rapids and Sierra Forest, and Intel 18A with Panther Lake. Intel has also made advanced packaging part of its foundry offering. However, Intel is still playing catch-up in servers. Several Xeon generations arrived years late and trailed contemporary AMD and Arm server CPUs in performance, efficiency, and core count. The process roadmap is back, but Intel does not hold the same process-technology leadership position it held prior to 10 nm. The introduction of gate-all-around nanosheets and backside power delivery are two of the biggest changes to transistor integration in a decade. Intel took on both changes at once: 18A paired its first RibbonFET with PowerVia in Panther Lake. Panther Lake is a substantial manufacturing milestone. Our cross-sections show how RibbonFET and PowerVia reshape local contacts and wiring, while the floorplans show where architectural consolidation and process choices save area. A sustained competitive lead depends on product performance, cost, yield, and the next implementation. The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page.. 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Allen Park — Detroit Lions coach Dan Campbell and quarterbacks coach Mark Brunell met with the media on Friday. Here are the noteworthy items from those conversations. Healthier up front, banged up in the back It’s good news, bad news on the injury front. First, the offensive line is going to be far closer to full strength with starters Blake Miller (knee) and Christian Mahogany (hip) on track to return to the lineup. That provides stability the offense lacked against Buffalo, particularly at right tackle, where backup Larry Borom allowed 11 quarterback pressures and committed a trio of penalties. Subscribe However, with that same unit, veteran Ben Bartch (foot) is likely to miss Sunday’s matchup with the Jets. The left guard competition that’s been ongoing since May has effectively been whichever option is healthy that week. In the back end, safety Thomas Harper (ankle) is also unlikely to be available on Sunday. That leaves the team precariously thin at the position following Avonte Maddox going on injured reserve this week. Christian Izien is expected to get the start alongside Chuck Clark. “Izzy's been working a lot back there and had a full week,” Campbell said. “And he's gotten a ton of work this week, a ton of reps, full-speed reps. ‘This is what you're going to do, this is the calls’ and just dousing him with full-speed reps and he's done a good job this week.” Safety depth is the bigger concern. The team is expected to count on some combination of Jalen Mills, who signed to the practice squad on Monday, Bishop Fitzgerald, the undrafted rookie poached off the Steelers’ practice squad on Tuesday, and rookie cornerback Keith Abney, who doesn’t have experience at safety. “I'll say this about Abney, man, for a rookie, he's a pretty dang smart, conscientious, aware football player that's got a ton of room to really take off,” Campbell said. “…He's young. He's another one, he just needs reps and reps. But, if we need it, that'll be a guy who may have to go in for us.” You can check here for the full injury report, with game designations, later this afternoon. Reflecting on the past Responding to comments made by Jets coach Aaron Glenn this week, Campbell reflected on his earliest days with the Lions, before the coaching staff had been fleshed out and it was just he and Glenn at the facility working through what they wanted things to look like. “It was just he and I in the lab,” Campbell said. The coach said the two would fill the whiteboard that remains in current coordinator Kelvin Sheppard’s office top to bottom with notes about philosophy, coaching style, team identity and the type of players they wanted to target. “He looks different than me,” Campbell said. “I'm taller, I'm whatever. He's quicker. All these different things, man, but we're really the same. I mean we're so much the same. And he's the defensive version, I'm the offensive version. He was my right hand man. …It was fun, man. Those were good days.” Campbell said it was one of the best and worst days of his life when the Jets hired Glenn to be their coach. “AG means the world to me,” Campbell said. “He's one of my dearest friends because I know what he's made of. “…It's because you know you're losing a little piece of you. That's what he meant to me and to us. So, that's hard.” Traits under center A couple of weeks back, Sheppard noted that Brunell had identified Saints quarterback Tyler Shough as the best prospect at the position ahead of the 2025 draft. On Friday, Brunell confirmed his evaluation and explained what he looks for when studying a young quarterback. Here’s the full answer: “Young quarterbacks, you have to look at everything, you know? I look at guys coming out of college just like I look at any free agents that we might be looking at, or guys that we might add to our roster. Do they take care of the ball? Are they on time? How is their decision-making? How are their feet? “It's tough because you look at a college player, you don't understand what they're trying to do offensively, what their reads are, but you can identify when a guy is accurate, obviously, and when the ball's getting there on time. If there are a lot of interceptions, it raises a red flag. And I think with a lot of the spread offenses of what you're seeing, when you see a young player and they're running some pro concepts and he's having to make protection calls, and he's getting the right play out of the run game, and when there's a lot on his plate and he's executing it very well, and he's managing all of that, that really jumps out at you. It’s really hard to find. “That's one thing we saw with Luke Altmeyer. He had a lot of experience. We call it, ‘Hey, he's playing quarterback.’ And what does that mean? It's not just completing passes. It's getting guys lined up, getting the right play, getting the protection call right, just fixing some problems, being able to progress (through reads). And there's still some young guys out there that can do that at a high level, which is good to see.” Regarding Altmyer, who competed for the team’s backup job through the offseason and currently resides on the practice squad, Brunell acknowledged physical development slows once the season starts, because there aren’t reps to go around. However, there’s still extensive mental development that’s ongoing. “The key for him is approach the game as if you're the starter, mentally,” Brunell said. “And that's really all you can do. Approach the game as if you're the starter and be good in the (class)room. You come in alongside Jared (Goff), and you come in alongside Josh (Dobbs) and (do) whatever they need. And if you get an opportunity to talk to Luke, he'll tell you he does have a lot of responsibilities besides just getting donuts for us on Saturday. “For him, it's mentally staying focused, and even though there's really no chance this Sunday of him playing, he has to approach it as if he's taking the first snap and playing the whole game. So what's our game plan? What are our checks? What are we anticipating? And then during the game, we keep him involved as far as looking at coverages and pressures. And so, really, for him, it's just a mental game. And for now, that's all we can do.” Reason for more zone The Lions have significantly increased their usage of zone coverage on defense this season. I asked Campbell if that was a reaction to their personnel or driven by the focus to generate more turnovers, given it can be easier to produce interceptions when you can keep eyes on the quarterback while playing zone. “I think it was a little bit of both,” Campbell said. “We just felt like this would suit us a little bit better up to this point, and then be disruptive and get takeaways, which worked well Week 1. We had two (opportunities) last week against Buffalo we weren’t able to get, but they’re there.” I followed up by asking how much the combination of heavy blitzing with the back end playing zone has contributed to some of the early-season coverage woes, since adding extra players to the pass rush means leaving the coverage short-staffed. “I mean, it’s challenging, and that’s why a lot of the things we’ve done in zone, for the most part, have been to reduce that stress level back there,” Campbell said. “But that also requires the front getting there. And if you don’t get there, we already kind of talked about that, but there (has to be) a trust there.” The alternative, Campbell explained is sending four and it taking longer for the rush to get home, which can create different problems for a defense. “You can bleed yards,” Campbell said about the strategy. “It gets a little longer and it’s dink-and-dunk and run after catch. …So, we do what we think is right by what we feel like our personnel (does well). But also the game plan, who you’re going in to play, the matchups, their offense. “We’re not stuck on one way.” Detroit Football Network is a reader-supported publication. To receive new posts and support my work, consider becoming a free or paid subscriber. Subscribe
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The Entrepreneurial Impact Awards Gala provided a formal night out for Fayetteville’s business community. The event took place at the Rudolph Jones Student Center on Thursday, Sept. 10. Photo by GFBJ. Fayetteville State University (FSU) and the Fayetteville-Cumberland Regional Entrepreneur and Business HUB (FSU HUB) came together to celebrate Fayetteville’s business community. The two organizations rolled out the blue carpet at the Rudolph Jones Student Center for their inaugural Entrepreneurial Impact Awards Gala held on Thursday, Sept. 10.The gala honored outstanding entrepreneurs and business leaders who demonstrate excellence, foster growth and inspire the next generation of innovators within the FSU and broader business community.FSU HUB Director Dr. Tamara Colvin was able to highlight that this new milestone was a great way to show local success stories, not just tell.“That one-stop shop that’s across the street, we never promised that everyone would be successful, but what we did promise was access. Four years ago, we opened up an entire ecosystem: counseling, capital, contracts, connections, certifications,” shared Colvin. “I want to thank the judges who took up hard work for choosing tonight’s honorees. That’s never an easy task when the whole region is full of people worth recognizing at the HUB. We practice what we preach: Res Non Verba: Deeds, not words.” A few of the inaugural recipients of the awards shared their statements with the Greater Fayetteville Business Journal.STUDENT ENTREPRENEUR Boolean Wiring LLC, Esean Rose, owner “I am truly honored and grateful to receive the Student Entrepreneur of the Year Award. I want to thank Fayetteville State University, the judges and everyone who has supported me throughout this journey. This award represents more than recognition for where Boolean Wiring is today. To me, it represents the potential of where we are going. I am excited about growing the company, creating jobs, serving our community and building something that can have an impact far beyond Fayetteville.”VETERAN-OWNED BUSINESS SpeediPrint Inc., Dazrell Fleming, owner “I’m honored to accept the Veteran-Owned Business Award on behalf of the entire SpeediPrint team. A special thank you to Dr. Tamara Colvin for creating this opportunity through the Entrepreneurial Impact Awards, and to my mentor, Mr. Julius Cook, whose guidance during the Boots to Business program truly paid off. This recognition reflects the hard work of my staff and the trust our customers place in us every day — I’m grateful to serve this community and excited for what’s ahead.”MULTI-GENERATIONAL EXCELLENCE BJL Construction, Cleopatrice Robinson, president“This award is especially meaningful because we are more than a business — we are the continuation of a family legacy built through faith, hard work, craftsmanship, integrity and service. I gratefully acknowledge my grandfather, Deacon Benjamin “BJ” Lacy, Jr., whose example helped establish the foundation upon which our family’s entrepreneurial legacy was built. I also honor my father, the late Dr. Wilson Lacy, former president of BJL Construction. Working alongside him was both an opportunity and an education. He taught me that a business’s reputation had to be earned on every project through honesty, excellence, quality and service. As the current president, I recognize that I did not arrive at this moment alone. I stand on the shoulders of those who came before me, and I am sustained by those who continue to walk beside me.”MICRO BUSINESS Maybridge Development, LLC, Latisha Perkins, owner “I accept this award with so much pride and a whole lot of gratitude. First and foremost, I want to thank my higher power for continuing to guide me and give me the strength to keep going.When I first started this business and moved here to Fayetteville, I had no clue what I was getting myself into. This business has turned me every which way but loose, and I definitely had some moments where I was ready to just pack it up and head back to Georgia. I want to thank my Maybridge team, my village, The Hub, the FCEDC team and all the people and organizations here in Fayetteville who have believed in me and Maybridge and helped us get here.”COMMUNITY IMPACT Greater Life of Fayetteville, Georgeanna Pinckney, CEO & executive director “We are deeply honored to be recognized by FSU and the FSU HUB with the Community Impact Award presented to Greater Life of Fayetteville. I am especially grateful for this recognition because it tells us that you see what we do – and, more importantly, why we do what we do. Our commitment is to serve, empower and create meaningful opportunities for youth and families in our community. Most importantly, we give God first and foremost all the glory. We thank Him for giving us the wisdom, strength, vision and unity to continue doing this great work in our community.” SMALL BUSINESS OF THE YEAR Crowder Trucking LLC, Carlos & Valerie Morrison Crowder, owners “I want to thank God for always keeping his hands on Crowder Trucking. I’m truly honored and grateful to receive the Small Business Award from the FSU HUB. Running a small business is not always easy. There are long days, difficult decisions, unexpected challenges and plenty of moments when you have to remind yourself why you started. But there are also incredible moments like this one that remind you that the hard work is worth it,” shared Valerie Morrison Crowder.OTHER WINNERS INCLUDE: Alumni Entrepreneur - The Two-Six Project, Grant Bennett, founder and president Fayetteville State University Faculty Award - Dr. Christy Swinson Emerging Business Award - Genuine Luxury Beauty Salon Legacy Award - Gillis Farms Inc. Industry Titan of the Year - Eaton Corporation Entrepreneur of the Year- Let Me Cater to You, Chef Judith Cage, owner
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