Search headlines

Researchers create polar wurtzite nitride semiconductor NbAlN

Polar wurtzite nitride semiconductors such as aluminum nitride and gallium nitride underpin high-power and high-frequency electronics. Researchers have now achieved the first epitaxial growth of niobium aluminum nitride (NbAlN) on GaN while preserving its polar crystal structure. Used as a barrier layer, NbAlN increased the interfacial two-dimensional electron gas density from 5.1 × 1012 to 1.7 × 1013 cm−2, opening new possibilities for polarization-based materials design in future GaN electronic devices.

Sep 6 • 8:00 PM EDT • Science • eurekalert.org