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What Formula One Engineering Can Teach Us About AI Infrastructure
Michael Fuller, Executive Chairman of Conflux Technology, examines why thermal performance alone is no longer enough in modern data centers, and how balancing heat transfer with hydraulic efficiency can unlock significant operational gains. The AI era is forcing data center operators to rethink some long-held assumptions about infrastructure design. As processor power densities continue to […]
Scientists in Iceland drilled straight into 900°C magma by accident — so energy-dense was the well that resulted, it could produce nearly ten times the power of a conventional geothermal well
An accidental breakthrough in Iceland reveals how to tap into magma itself, potentially unlocking geothermal energy at scales previously thought impossible.
Scientists Stunned: Colossal Eggs Discovered 3,500 Meters Beneath an Active Volcano
Beneath an active seafloor volcano off Vancouver Island, researchers have documented a congregation of giant eggs at roughly 3,500 meters, a discovery that reframes how life can flourish under extreme conditions. The eggs belong to the Pacific white skate, an elusive deep‑sea species adapted to cold, crushing pressure and perpetual darkness. What seemed an unlikely nursery is actually a geothermally warmed refuge, where subtle heat helps embryos survive a marathon incubation. The finding links volcanic energy to a quiet engine of biodiversity, turning a hostile landscape into an incubator. A living volcano, a hidden nursery The seamount long assumed dormant now exhales mineral‑rich, shimmering plumes, proof of hydrothermal life at depth. Expedition cameras swept across black basalt and pale bacterial mats, revealing vents that pulse with warmth. That warmth, though modest by human standards, alters the physics of development for cold‑adapted embryos. In a realm where metabolism creeps, even a few degrees can mean faster growth and higher survival. The volcano is not only active; it is ecologically formative, drafting a blueprint for a thriving oasis. Giant eggs and a skate built for the abyss The Pacific white skate, Bathyraja spinosissima, is built for the abyss: broad wings, armored spines, and a life history that trades speed for endurance. Females lay outsized, rectangular “mermaid’s purses,” often 46–50 centimeters long, packed with rich yolk to fuel years of growth. In the frigid deep, embryos can require around four years to hatch, a timeline that magnifies every energetic advantage. The scale is striking—large eggs, large adults, and a textbook case of deep‑sea gigantism. The volcano’s gentle heat may literally shave months or years from the wait. Why heat matters at the bottom of the sea Hydrothermal circulation delivers low‑level warmth without the turbulence that would scatter fragile egg‑cases. Slightly elevated temperatures accelerate enzyme kinetics, nudging development along while keeping embryos within a safe range. Mineral‑laden fluids likely shape local microbiomes, which, in turn, can influence biofilms on egg surfaces. The environment acts like a slow, steady incubator, countering the deep sea’s tyrannies of cold and scarcity. For a species with long maturation and few offspring, every incremental boost compounds across generations. An ecosystem sculpted by fire and water Seafloor volcanoes create steep environmental gradients, stitching together hot vents, cool eddies, and mineral gardens into mosaic habitats. Microbes harvest chemical energy, seeding food webs that support crustaceans, fishes, and skates. Cameras documented egg‑cases nestled among rocky ledges, near communities nourished by vent‑driven chemistry. These islands of productivity behave like deep‑sea oases, sustaining life far beyond the vent orifice’s flickering light. The nursery’s success underscores how geological forces engineer biological opportunity. “Finding a cradle of life tucked beneath a breathing volcano reminds us that the planet’s harshest places can be profoundly generous.” What the discovery could change The nursery reframes conservation priorities in regions where volcanism quietly underwrites reproduction. Protecting hydrothermal corridors could safeguard entire lifecycles, not just charismatic adults spotted during occasional surveys. It also sharpens questions about how climate‑driven shifts in ocean circulation might influence vent activity, temperature fields, and embryo survival. With methodical mapping, time‑series cameras, and environmental DNA, scientists can track whether nurseries remain stable or drift with geologic rhythms. Key implications include: Enhanced understanding of deep‑sea reproduction at hydrothermal sites. New conservation targets centered on geothermal nurseries. Comparative studies with other volcanic regions, from the Galápagos to rift zones. Biotechnological insights from organisms adapted to long, cold development. Better models of how seafloor heat shapes regional biodiversity. Methods behind the revelation Remotely operated vehicles threaded through chimney fields, gathering video, temperatures, and mineral signatures. High‑definition imagery captured the distinctive, horned egg cases, their edges dusted with fine volcanic silt. Geochemical profiles mapped how heat and chemicals disperse, outlining the “thermal lanes” where eggs most cluster. Combined, these datasets reveal a nursery organized by geothermal topography, with egg‑cases concentrated in pockets of gentle, sustained warmth. A fragile boon in a changing ocean Deep‑sea environments feel remote, yet they intersect with global pressures: mining proposals, cable routes, and shifting oxygen levels. The nursery’s resilience hinges on stable heat flow, intact substrates, and minimal disturbance from noise or sediment. Safeguarding such places is not just about protecting novelty; it preserves a slow, ancient strategy that lets large, long‑lived animals endure in the coldest reaches of the Pacific. Where geology and biology meet, the planet’s deep time still writes living stories. This volcano‑warmed nursery adds a vital chapter to that story, revealing how subtle thermal gifts can tip the scales toward life in the abyss. With each dive, researchers trace the contours of an unseen world, where fire feeds water, and water—against all odds—feeds the future.
Scientists may have discovered a brand-new mineral on Mars
Scientists studying Mars may have uncovered a brand-new mineral hidden in the planet’s ancient sulfate deposits. By combining laboratory experiments with orbital data, researchers identified an unusual iron sulfate—ferric hydroxysulfate—forming in layered deposits near the massive Valles Marineris canyon system. The mineral likely formed when sulfate-rich deposits left behind by ancient water were later heated by volcanic or geothermal activity, transforming their chemistry.
Controlled Thermal Resources and Plum Acquisition Corp. IV Announce Definitive Business Combination Agreement to Advance U.S. Critical Minerals and Energy
As one of America’s largest and most advanced geothermal power and critical minerals projects, the transaction is expected to enable Controlled Thermal Resources to advance its Hell’s Kitchen Project and commence Stage 1 construction.Transaction values Controlled Thermal Resources at a pro forma enterprise value of approximately $4.7 billion. IMPERIAL, Calif., March 09, 2026 (GLOBE NEWSWIRE) -- Controlled Thermal Resources Holdings Inc. (“CTR” or the “Company”), an emerging leader in U.S. critic
The Birth Of A Seafloor: Scientists Witness New Oceanic Crust Forming Through Earth Splitting Apart For First Time
Like a snake shedding its skin, Earth's crust is constantly being remade.
Can windows cool buildings without electricity?
Thermochromic smart windows can automatically adjust solar and thermal radiation in response to temperature, offering a passive route to reduce building energy demand and improve indoor comfort. A new review published in Science Bulletin examines why these windows have not yet achieved large-scale application, despite rapid materials progress. The authors identify key challenges in spectral regulation, switching temperature, response speed, durability, scalable fabrication, glazing integration, lifecycle impacts, and building control. They argue that future development should shift from isolated material optimization toward deployment-oriented design and system-integrated adaptive building envelopes.
Geothermal finds rare political sweet spot amid AI boom
The bipartisan appeal, combined with surging electricity demand from AI, is helping fuel investment in the niche energy source.
How chemists turned bourbon waste into supercapacitors
Hydrothermal carbonization can directly convert sloppy stillage into hard or activated carbon.
Antarctica's Southern Ocean might be gearing up for a thermal 'burp' that could last a century
When humans manage to cut enough emissions and eventually reduce global temperatures, new research shows the Southern Ocean could kick warming back into gear.
SLB to acquire Kelvion for $3.4 billion
Oilfield services provider SLB said on Monday it will acquire thermal management provider Kelvion from Apollo Global for $3.4 billion in cash, not including debt.
The MOST Effective Thermal Mass Works Like A Sunburn
Way, way back in the days when men wore beards and wide-lapelled suits in exotic colors, only NASA had access to photovoltaics and ‘solar’ meant solar thermal. In those days of appropri…
Scientists discover asymmetric diffusion of magnetic skyrmions in simulations
Magnetic skyrmions are nanoscale spin textures that can behave like particles and move and diffuse in real space. This makes them promising information carriers for future memory and computing technologies. A new computational study in npj Spintronics shows how geometry and topology can guide asymmetric thermal diffusion of magnetic skyrmions, offering insights for unlocking unconventional computing paradigms, including future stochastic and neuromorphic computing devices for more efficient artificial intelligence (AI) applications.
Scientists Develop New Technology to Continuously Monitor Geothermal Energy Operations
Custom sensor monitors seismicity for months straight more than a mile below ground.
Argonne develops real-time AI monitoring for an advanced nuclear reactor component
Argonne National Laboratory researchers proposed an AI-powered monitoring system that can spot blockages in the heat exchangers of molten-salt-cooled reactors in real time, helping prevent costly shutdowns and improve reliability for next-generation nuclear energy.
New MatterChat Model Helps AI to ‘See’ the Language of Science
From writing emails to generating computer code, much of the artificial intelligence prevalent in our daily lives has succeeded by mastering one domain: text. However, this leaves a major blind spot in the physical sciences, where models depend on the high-resolution, three-dimensional data of the physical world, like the intricate lattice of atoms in a crystal. Delivering on the promise of using AI for science requires teaching these data-driven text models to seamlessly “talk to” physics-based models. Now, a new AI framework from Lawrence Berkeley National Laboratory (Berkeley Lab), called MatterChat, solves this problem by creating a specialized “bridge.” It connects the conversational power of a Large Language Model (LLM) with a physics-based AI that models “interatomic potentials”: the complex physical forces between atoms. The resulting system already significantly outperforms general-purpose AI tools like GPT-4 at predicting material properties, and the team hopes it can accelerate scientific discovery by serving as a robust research partner that provides grounded insights and generates step-by-step instructions for synthesizing novel materials. A paper describing this work was recently published in Nature Machine Intelligence. “Traditional simulations can provide the physical rigor required for materials science, yet their computational cost remains prohibitive for high-throughput screening. Conversely, while LLMs excel at rapid knowledge synthesis, they inherently lack the ‘structural vision’ to interpret materials directly from their underlying atomic coordinates,” said Yingheng Tang, a postdoctoral researcher in Berkeley Lab’s Applied Math and Computational Research Division (AMCR) and lead author on the paper. “MatterChat was built to solve this dilemma, empowering LLMs with a structural ‘vision’ that allows researchers to leverage their full potential for solving complex, real-world materials challenges.” Empowering language models to solve complex challenges in materials science To build MatterChat, the Berkeley Lab team drew inspiration from technologies like Vision Question Answering (VQA) and Text-to-Image (T2I) generation. In these tasks, AI must translate high-level text concepts into visual images, or vice versa. Doing so requires developers to build tools that “bridge” two fundamentally different forms of data. The researchers adapted this concept to the physical sciences. With MatterChat, they created a “bridge model” that successfully connects an LLM’s general knowledge with the deep understanding of the atomic-scale world encoded in scientific interatomic potentials. Until now, researchers using LLMs to solve materials problems usually had to feed them raw data files as if they were just strings of text. It’s like asking an AI to understand a complex 3D engine based only on a parts list: the LLM can read the names, but it can’t “see” how the atoms fit together in space. MatterChat solves this by training a specialized AI bridge model, pre-trained on millions of crystal structures and an LLM, to align the LLM’s representation of the world with the interatomic potential’s representation of the world. The bridge model can translate physical insights into a format the LLM can actually understand. By giving the LLM these “scientific eyes”— a scientific “inductive bias” in the terminology of AI — the Berkeley Lab team has transformed it into a robust research tool capable of providing grounded scientific insights into complex materials challenges, such as predicting thermal stability or analyzing electronic band gaps. “We think of atoms as living in a physical space, but from a machine learning perspective, they are just vectors living in some very non-trivially structured manifold in a high-dimensional Euclidean space; and, of course, the same is true for the sentences and paragraphs that we use to express our ideas about those atoms,” said co-author Michael Mahoney, Berkeley Lab’s Scientific Data Division (SDD) AI Initiative Research Lead. “The bridge model basically gets those two structures to ‘talk with’ each other.” As a proof-of-concept of this general approach, the team trained their bridge model on a dataset curated by pairing nearly 143,000 stable atomic structures from the Materials Project with their corresponding physical properties. This training data was automatically assembled using the Materials Project’s API and deliberately enriched with properties fundamental to microelectronics design — like formation energy and bandgap — allowing MatterChat to learn the complex patterns connecting a material’s atomic blueprint to its functional performance. To validate their model, the researchers benchmarked MatterChat against a suite of other AI systems, from general-purpose LLMs to other specialized scientific AI methods. The results show that MatterChat consistently outperformed its competitors across a range of tasks. The model was more accurate in classifying material types and demonstrated superior precision in predicting numerical properties. For example, it excelled at predicting a material’s bandgap, a property critical for designing new electronics from high-capacity energy storage to next-generation computer chips. “Our design is significantly more efficient because we don’t have to build a massive AI model from the ground up,” said co-author Zhi (Jackie) Yao, a research scientist in Berkeley Lab’s AMCR. “Instead, we take two powerful, pre-trained models — a structural encoder for materials physics and an open-source LLM — and use them off-the-shelf. The only component we actually train is the lightweight ‘bridge model’ that translates between them. It’s the difference between building an entire car factory and simply designing a smart adapter that connects a world-class engine to a world-class navigation system. This approach is not only computationally efficient, but also makes the system modular, so we can easily upgrade components or adapt the bridge for other scientific domains in the future.” Crucially, this modular design highlights exactly how institutions like Berkeley Lab and the Department of Energy are carving out a highly valuable niche in the booming AI landscape. Rather than competing with Silicon Valley tech giants to build ever-larger language models from scratch, the lab is focusing on the specialized connective tissue that makes commercial AI useful for hardcore science. Because the bridge model approach underlying MatterChat is forward-compatible, it is perfectly positioned to leverage these parallel tracks of innovation. As Mahoney pointed out, “We expect that industry will continue to develop improved LLMs, and we expect domain scientists and facilities will continue to generate new data. An important part of scientific machine learning is not simply to solve problems on today’s data, but instead to develop general methods that will be forward-compatible with orders of magnitude more data, whether from scientific domains or from LLMs.” According to Yao, the MatterChat project, which was initially developed and enhanced with funding from a Berkeley Lab Laboratory Directed Research & Development (LDRD) Program, will now expand its capabilities. In a collaboration with Fermilab, MatterChat is already contributing to a U.S. Department of Energy Genesis Mission project — called Accelerating eXtreme Environment Specs-to-Silicon (AXESS) — that aims to speed up the development of next-generation, high-speed, radiation-hardened detectors for challenging particle physics experiments by using advanced 3D integrated circuits (chiplets) and AI-driven data analysis. In addition to the LDRD support, the team also credits supercomputing resources at the National Energy Research Scientific Computing Center (NERSC), located at Berkeley Lab, with MatterChat’s success. “We are incredibly grateful to NERSC; this research simply would not have happened without access to the Perlmutter supercomputer through their AI for Science program,” said Tang. Wenbin Xu, a NERSC postdoctoral fellow at the time, was also a major co-author of the work, as was Benjamin Erichson, a research scientist in Berkeley Lab’s SDD, highlighting the benefits of AMCR-SDD collaboration on AI for science. ### Lawrence Berkeley National Laboratory (Berkeley Lab) is committed to groundbreaking research focused on discovery science and solutions for abundant and reliable energy supplies. The lab’s expertise spans materials, chemistry, physics, biology, earth and environmental science, mathematics, and computing. Researchers from around the world rely on the lab’s world-class scientific facilities for their own pioneering research. Founded in 1931 on the belief that the biggest problems are best addressed by teams, Berkeley Lab and its scientists have been recognized with 17 Nobel Prizes. Berkeley Lab is a multiprogram national laboratory managed by the University of California for the U.S. Department of Energy’s Office of Science. DOE’s Office of Science is the single largest supporter of basic research in the physical sciences in the United States, and is working to address some of the most pressing challenges of our time. For more information, please visit energy.gov/science.
The Dinosaur-killing Asteroid May Have Fueled Life Underground for 8 Million Years
Scientists found evidence that Chicxulub remained hydrothermally active four times longer than earlier estimates.
The iPhone Duo’s cooling system hides a clever trick inside its hinge
While a folding iPhone posed a new challenge for Apple’s thermal engineering team, they came up with a creative way to leverage the device’s hinge to their advantage.
Ukrainian defence tech seeks new ways to scale up
Since Russia's full-scale invasion in February 2022, Ukraine's defence sector has expanded several-fold, becoming a significant source of military innovation, especially in unmanned systems, counter-drone technologies, electronic warfare and AI-driven combat systems. But finding the funds and personnel to scale up and to reach international markets remains a challenge.Spurred on by the demands of the front-line, Ukrainian defence companies say they can develop a minor component in a couple of weeks, or major hardware or software solutions within a year. This is several times faster than the usual development cycles in the sector. Tencore, founded in 2024, is now one of Ukraine’s largest providers of unmanned ground vehicles, well exceeding the production of NATO members in this category. Odd Systems, a Ukrainian combat cameras developer founded in 2023, launched its first thermal camera in 2024. Less than two years later, it is developing the fourth generation of the product, one that has evolved into a full vision system.According to Michael Singer, managing partner at Verne Capital, a venture capital fund supporting defence companies in Europe, this speed is down to the short feedback loop between the developer and the end user. “Ukrainian companies develop technologies in close interaction with soldiers and military units, test them under real combat conditions and rapidly incorporate feedback into the next generation of the product,” he says. “Sometimes we need to react to feedback and deploy an upgrade within hours,” says Polina Tymchenko, the spokesperson for Himera, which develops electronic warfare-resistant walkie-talkies. “It means that, as a company, you have to have a higher tolerance for risk, and also design your products in a way that fosters those quick changes.”Getting a product deployed by a combat command involves no paperwork other than a purchase order, says Perry Boyle, co-founder and chief executive of Mits Capital, a Ukrainian-US investment group focused on attracting capital for Ukraine's defence tech sector. “New weapons can be developed and deployed based largely on handshakes.”Nevertheless, the speed of development is largely subject to the level of funding, says Iryna Sukhomlyn, head of business development at RMachine, a developer of unmanned ground systems. “Financial support needs to start much earlier, particularly at technology readiness level 3-5, not only when most of the technological risk has already been removed,” she says.In 2025, Ukrainian defence tech companies attracted about $129 million in investment, with the true figure likely higher given the share of undisclosed security-sensitive deals, according to a report published by the Kyiv School of Economics. These investments were primarily concentrated in the AI and software segment, as they are considered a lower financial risk.Scaling production is a major barrierAccording to Iryna Supruniuk, business development director at Odd Systems, proving a defence product in Ukraine is not the end of the development process, but the beginning of a continuous evolution, since operational requirements change rapidly. “Continuous iteration remains our highest priority,” she says.It's also when production must scale up, which represents a major hurdle. “Scaling production requires capital, manufacturing capacity, components, certification, procurement access and reliable supply chains,” Singer says. Scale-up is also hampered by demographic pressures, especially a shortage of young specialists needed to expand engineering teams. Companies have reported struggling to replace specialists lost due to Russian attacks, mobilisation and emigration. In order to meet this scale-up challenge and finance arms production, begun allowing defence technologies to be exported, assuming it has an excess capacity. It has also announced the creation of ten defence and weapons export centres across Europe by the end of 2026.According to Singer, a technology that has demonstrated its value under real combat conditions has a fundamentally different credibility than a product that has only been tested in a laboratory or training environment. But combat validation alone doesn’t automatically create an international business. “Companies still need access to foreign defence ministries and procurement organisations, international certification, financing for production scale-up and, in many cases, local industrial partners,” he says.Already in 2026, the EU has signed several agreements with Ukraine that aim at joint defence technology development and production. These include allowing Ukraine to join the European Defence Fund, signing a financing agreement under the European Defence Industry Programme, and setting up the EU-Ukraine Drone Alliance.For Singer, it is important that European defence companies don’t just see their Ukrainian partners as technology suppliers, but rather as potential innovation partners. “Ukrainian companies bring speed, operational experience and an exceptional ability to iterate. European partners can provide industrial capacity, capital, established supply chains and access to European procurement markets.”Procurement possibilitiesWhen it comes to exports, the procurement and compliance processes involved require time, taking months or even years, and money. In other words, resources that small defence tech companies need if they are to improve and scale up their technologies. According to Sukhomlyn of RMachine, if the priority is to rapidly increase available defence capabilities, then the processes need to reflect that urgency. “If Europe wants defence innovation at wartime speed, its administrative processes also need to operate much closer to wartime speed,” she says, highlighting a need for support with certification, market access and mutual recognition of relevant testing. “Otherwise, we risk having excellent technology available but spending years making it administratively eligible to be purchased.”Related articlesRussia widens targeting of European research centresEU must support research managers in central and eastern Europe, says Visegrad fund headThis is a lesson Europe’s defence sector would do well to learn, Singer says. “Defence innovation needs to be organised around the speed and requirements of the end user, not around the speed of the bureaucracy.”Supruniuk says the European defence sector should rethink the balance between quality and quantity. “In many cases, a good-enough system available in thousands of units creates greater operational value than a perfect system available in dozens.”“For decades, everyone has been looking for that all-powerful, exquisite system that can protect everyone,” adds Tymchenko. “We see in crime that only scalable, dedicated, affordable solutions can actually defend democracies.”
AMD Ryzen 7 5800X3D 10th Anniversary Review
The AMD Ryzen 7 5800X3D 10th Anniversary Edition brings back the legendary CPU known for its revolutionary 3D V-Cache tech. At $340, it's a compelling option, especially if you already have an existing AM4 setup. As bonus, AMD includes a Carbice thermal pad for enhanced cooling, which we ran through 450 heat cycles to confirm performance.
Intel Panther Lake Teardown, 18A, BSPD, GAAFET, SemiAnalysis STEEL
Panther Lake debuts the first commercial implementation of backside power delivery (BSPDN), introduces Intel’s first iteration of gate-all-around (GAA) transistors, and showcases their advanced packaging capabilities with its Foveros-S assembly. With Panther Lake, Intel’s manufacturing arc has shifted from nebulous roadmaps to shipped silicon, a significant milestone on their long road back to competitive semiconductor manufacturing. To evaluate the extent of Intel’s comeback, we tore down Panther Lake. The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page. Our teardown traces 18A from its four-sheet RibbonFETs (Intel’s marketing name for GAAFETs) and gate stacks through contacts, frontside and backside wiring, and the bonded carrier. We explain how these material and integration choices improve gate control and reduce resistance, while adding capacitance, thermal resistance, and process complexity. Our measurements put Panther Lake’s 18A compute logic and TSMC N3E GPU logic at similar logic density. However, 18A does not lead TSMC N3P, N2 or Samsung SF2 in peak density. Panther Lake’s CPU cores are incremental updates, and the high-end GPU still uses TSMC N3E. Panther Lake assembles one compute tile, one GPU tile, and one I/O tile atop a passive base tile using Intel’s Foveros-S advanced packaging. Both compute tile variants use Intel 18A. The Xe3 GPU options are a 4-core GT1 tile on Intel 3 and a larger 12-core GT2 tile on TSMC N3E. Both I/O tile variants use TSMC N6. [1], [2] Our analysis centers on the PTL-U compute tile, both the 4-core and 12-core GPU tiles, as well as the 12-lane I/O tile. In conventional chips, power and signal are routed through the same frontside metal stack towards the device frontend. Power rails consume scarce routing resources near the transistors, while tall via stacks carry VDD and VSS from the coarse upper wires to local rails. Backside power delivery (BSPD) moves the main power network behind the transistor layer, to the backside, separating it from frontside signal routing. We covered BSPD and its impacts in 2024. [3], [4], [5] Intel’s BSPD implementation, branded as “PowerVia”, routes power through dedicated backside metals to nano-TSVs, which connect those rails to local source/drain (S/D) contacts. Implementing that separation requires Intel to build the interconnect stacks from both sides of the wafer. The frontside comprises the M0-M14 signal stack, while the backside comprises the BM0-BM5 power stack. M0 and BM0 are closest to the transistors. The nano-TSVs connect the two sides, but Intel patterns and etches each via from the front after forming the contacts. A narrow via runs from the side of the contact deep into the silicon substrate. Intel then completes the frontside signal metal stack, bonds the wafer to a carrier, flips it and removes the original substrate until the buried via tips are exposed. The backside metal stack is then deposited directly on the revealed vias. The nano-TSV and backside-via profiles taper in opposite directions because Intel forms them from opposite sides of the wafer. The transistor structures form the FEOL. Local contacts and nano-TSVs connect them to the wiring. M0 begins the frontside interconnect stack. The silicon carrier remains attached above the frontside interconnects. It supports the device wafer during substrate removal and backside processing and remains part of the finished chip’s thermal path. PowerVia removes the main power distribution from the congested frontside metals, routing supply through shorter and wider backside wires. Its lateral landing still occupies area in the standard cell, so it recovers less cell area than a direct backside contact. [3] Nano-TSVs beside the logic devices carry VDD or VSS from the backside power network, while signal connections continue upward through the frontside metals. Backside Interconnects Samsung SF2 data is included for comparison to Panther Lake’s within this article. SF2 is the incumbent GAA foundry node but lacks BSPD, serving as a useful reference to evaluate 18A. A full teardown of Samsung’s S26 products, processed on SF2, will be shared soon.Nanosheet-cut EDS comparison. The PowerVia supply path runs from the backside Cu rails through Mo-lined W nano-TSVs to the local transistor contacts. In this cross section, the tapered connection spans roughly 150 nm from the contact level to BM0. The Ta liner confines Cu and promotes adhesion to the surrounding stack; the AlOₓ etch stop controls the next dielectric etch above the rail. Dielectric beneath the ribbons electrically separates the devices from the backside wiring and removes the conducting silicon body below the channel. [6] AlOₓ serves as an etchstop (ES), enabling endpointing and protecting the underlying layers. Low-volatility aluminum fluoride reaction products resist the fluorinated plasma, allowing a thin AlOₓ film to protect the metal while the surrounding low-k dielectric is removed. [6], [7]. While the BM0 and layers above the M1 lines show double AlOx layers, Our SMIC N+3 teardown showed single AlOₓ layers. SMIC uses a simpler local AlOₓ substack, while the remaining cap and etch sequence provide the required landing protection. So why double layers? The closely spaced AlOₓ doublets provide two protected endpoints in the etch sequence. Intel documents an AlOₓ/SiN/AlOₓ stack that explains the benefit. The main dielectric plasma etch stops on the first AlOₓ film; a selective wet clear opens that film; a second plasma etch removes the intermediate SiN and stops on the second AlOₓ film. The final wet clear exposes the metal landing surface. SiN is the intermediate dielectric in Intel’s published example. [8] The second stop protects the metal through a cap breakthrough. Wide openings can etch faster than narrow ones, and etch depth varies across the wafer. Metal under an early-clearing opening would otherwise be exposed while other openings still need more etching. Staged protection widens the process window and reduces metal erosion, corrosion and void formation. [8] TSMC documents AlN/AlOₓ/SiOC/AlOₓ above Cu, with AlN blocking Cu diffusion, and a simpler AlN/SiOC/AlOₓ variant that omits one AlOx film. [9] Levels with different opening sizes, aspect ratios, pattern densities and cap materials need different etch margins. A double AlOx stop is useful where another protected endpoint justifies the added processing. The extra film adds formation, selective opening and cleaning steps, plus another set of interfaces to control adhesion, moisture, and stress. These blanket films are opened through the existing via pattern, so each film does not require another lithography mask. AlOₓ adds parasitic capacitance when it replaces lower-k dielectric; two thin AlOₓ films can nevertheless contain less AlOₓ than one thick film. Total thickness, placement, and theintermediate dielectric determine the electrical cost. Deposition chemistry also changes AlOx permittivity and residual hydroxyl content, which can oxidize the underlying metal. [7], [8], [10], [11] The backside stack separates into relatively fine BM0-BM2 wiring near the devices and coarser BM3-BM5 power distribution. The largest pitch increase occurs between BM2 and BM3. BM0’s pitch closely matches the logic-row height, fitting local power delivery to the cell rows. Higher levels aggregate current through larger conductors: routing density becomes less important than low resistance and current capacity as the network approaches the package. This hierarchy provides wide power wiring for the power delivery network without consuming scarce frontside signal-routing resources. [3] The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page. Frontside Interconnects Intel 18A combines Mo-lined W contacts and nano-TSVs with a separate backside Cu power network. Samsung SF2 keeps power on the frontside, using Ti-based contact interfaces and Ta-based barriers and Co liners around Cu wiring. In 18A standard-cell rows, backside power rails supply the devices through nano-TSVs within the cells, freeing frontside routing resources. Samsung’s M0 accommodates both power and signal connections. From the device toward M0, the connection runs through a Ti-based S/D interface, W contact fill, a Mo-lined W via, and the Cu M0 wire. Mo supplies a conductive nucleation and adhesion layer for W, replacing the resistive TiN liner used in conventional W integration. This increases the effective conduction volume within the feature while retaining W fill and its established polishing, cleaning and etching processes. Intel’s Mo/W patent describes this integration tradeoff. The nano-TSV uses the same Mo-lined W construction in the backside supply path. [12] The move from TiN to Mo is an incremental change. While a full Co or Mo fill can also reduce the volume lost to liners in very small features, it requires new integration schemes that increase complexity and risk. Cu remains attractive for wider wires due to its low resistance. As wires and vias shrink, the diffusion barrier consumes an increasing fraction of their cross-section. [12], [12], [14] Intel uses Co/Ru liners at M0-M1, Co at M2-M4, and Nb at M5-M9. The lower-level liners help Cu adhere and reduce void formation during trench fills. Applied Materials’ Endura has new thermal control that facilitate wetting process, so the thin film continuity is good enough that good capillary pressure will drive Cu atoms to the via bottom without voiding. Intel’s choice to use Nb is particularly interesting. Intel’s Nb patent describes a conductive diffusion barrier intended to reduce the barrier’s contribution to resistance relative to conventional Ta-based barriers, particularly at via bottoms where all current crosses the barrier. The patent pairs Nb in coarser levels with the option of lower-cost PVD processing. [15], [16] The upper metal layers support thicker barriers formed through physical vapor deposition (PVD) despite its worse coverage and uniformity. Meanwhile, the lower metal layers require thinner barriers deposited through conformal atomic layer deposition (ALD). Co/Ru adds another material interface and requires controlled deposition and Cu fill. Changing liners and barriers by metal layer allows Intel to optimize interconnect resistance, process complexity, and reliability. [15, 16] RibbonFET, Intel’s name for its gate-all-around FETs (GAAFETs), replaces the FinFET’s vertical fins with four stacked horizontal silicon nanosheets, allowing the gate to surround the channel on every side. The path to GAAFET begins with the planar transistor. A planar MOSFET places the gate above the channel between its source and drain. Pairing an NMOS with a PMOS transistor creates a CMOS inverter, in which the NMOS pulls the output low for a high input, and the PMOS pulls it high for a low input. The gate must retain electrostatic control of the channel to ensure clean switching. As gate lengths shrank, the drain began to compete with the gate for that control, increasing off-state leakage. Electrostatic control was restored through an architectural evolution that raised the channel into a vertical fin and wrapping the gate around three sides. Called “FinFET”, this new architecture packed more effective channel width into a smaller footprint. Further scaling made it harder to maintain both drive current and leakage within smaller cells, and reintroduced the same problems planar MOSFETs faced. Nanosheet GAAFETs close the fourth side by replacing the vertical fin with a stack of horizontal nanosheets, each surrounded by the gate. The tighter electrostatic control suppresses leakage at shorter gate lengths while stacking adds effective channel width within the cell footprint. In a FinFET process, channel width changes in discrete steps as designers must add or remove whole fins. Nanosheet width can instead be adjusted continuously within the process’s design rules. Wider sheets increase drive current, while narrower sheets reduce capacitance at the cost of drive current. Intel 18A uses stacks of four nanosheets each and varies their widths across logic and SRAM. At the process level, adding more sheets to each stack increases effective channel width and drive current, but complicates fabrication. RibbonFET vs MBCFET Samsung began GAAFET production in 2022 with SF3E, following with SF3 and now SF2. Its ‘MBCFET’ provides a useful structural comparison with Intel’s first RibbonFET implementation. [17] STEEL is digging deeper into SF2, used in the Exynos 2600, and TSMC’s GAAFET N2, used in Apple’s A20 Pro, in upcoming newsletter articles. We’re throwing some teasers on X. Let’s compare Samsung SF2’s MBCFET with Intel 18A’s RibbonFET. Subscribe Even to the untrained eye, Intel’s extra nanosheet is obvious. Intel stacks four ribbons to Samsung’s three. Samsung’s sheets are much wider in these fields, so both sheet count and width matter to the available channel perimeter. Sheet width also changes which silicon surfaces carry current. On conventional (001) silicon, wide nanosheets emphasize the broad top and bottom surfaces, favoring electron transport; the larger sidewall contribution in a narrow sheet favors hole transport. Thinner sheets improve gate control but increase confinement and scattering. This makes width and thickness part of the NMOS/PMOS balance, alongside strain and threshold voltage. [18], [19] GAAFET designs like 18A use different work-function-metal (WFM) stacks for NMOS and PMOS. Around each ribbon, a thin SiOx interfacial layer separates the silicon channel from the HfOx high-k dielectric, with La providing dipole tuning and the WFM wrapping the dielectric. NMOS uses a TiAl-based stack, while PMOS uses TiN WFM. W fills the remaining gate trench, providing a lower-resistivity path where the work-function layers are no longer needed. In this field, the PMOS stacks leave room for W between ribbons, while the NMOS stacks occupy more of those gaps. A silicon-based dielectric marks the P/N boundary, allowing the PMOS and NMOS gates, sharing the same gate trench, to be processed sequentially. Fast logic paths, retention circuits, and SRAM need a family of threshold options. Changing threshold without substantially changing device dimensions, capacitance or fabrication complexity is valuable. FinFET processes typically use different work-function-metal stacks. In a four-ribbon GAA stack, the narrow sheet-to-sheet gap limits how much WFM can fit around each channel. La in the gate dielectric creates interfacial dipoles at the SiOx/HfOx boundary, shifting effective work function and tuning threshold voltage. This gives Intel another control alongside its NMOS and PMOS WFM stacks. Low-threshold devices improve critical-path drive; higher thresholds reduce leakage elsewhere. Dipole tuning is especially useful in GAA because it changes threshold without consuming the narrow intersheet gap with thicker WFM. Precise control of La incorporation, diffusion and interface quality has long been a challenge, limiting viability in high volume production but is now seen from every leading-edge foundry. Intel’s patent describes depositing a dipole-forming oxide above HfOx and annealing it toward the interfacial oxide before completing the work-function and fill metals. This separates threshold tuning from the space available for metal. Newer research addresses the thermal cost: imec’s 2026 dipole-middle research inserts the shifter between two HfOx depositions, shortening the diffusion path while protecting SiOx during patterning. [20], [21]Matched-cut EDS, Intel 18A (left) vs. Samsung SF2 (right). Intel retains raised source/drain epi beneath its contacts, while Samsung recesses W deep into the epi to form a V-shaped Ti-lined interface. The deeper contact increases metal-to-semiconductor area and shortens the current path from the lower sheets, reducing contact and spreading resistance. It also removes epi volume and brings the contact etch closer to the channel ends. Retaining more epi preserves the material available for strain transfer, especially from SiGe into PMOS. These geometries balance contact access against stress engineering and etch margin. [22], [23] Samsung stacks three sheets to Intel’s four ribbons, and both processes use sheet width to tune drive strength. In our Samsung cross-sections, widths range roughly from 19 to 30 nm in the NPU rows and 37 to 50 nm in the CU cell. The Samsung nanosheets taper, with the widest sheet at the bottom and the narrowest at the top. Both processes use HfOx gate dielectric and Ti-based work-function stacks, with Al in the NMOS stack. In the Samsung devices shown here, the dielectric and WFM occupy the intersheet gaps, leaving W above the top sheet. Intel’s PMOS stack leaves more room between ribbons, and W fills those gaps while the thicker NMOS stack leaves W mainly in the upper trench. Gate-stack EDS maps. The W between Intel’s PMOS ribbons provides a conductive path close to the lower gates. Where WFM fills the entire gap, the gate still surrounds the channel, but voltage reaches it through the more resistive work-function films. Thinner WFM and dipole tuning preserve room for low-resistivity fill; Mo and Ru are alternative fill metals being developed for further scaling. [24] A masked, sequential WFM flow explains the different gate heights and inter-nanosheet fill. The proposed sequence below shows how separate NMOS and PMOS work-function steps produce that geometry. Enabled by the BSPDN process, Intel replaces the dense-logic silicon subfin with dielectric, removing the parasitic conduction path below the ribbons and reducing substrate-related capacitance. A retained silicon body as in classical, non-SOI, planar and FinFET designs needs junction and punchthrough-stop engineering to suppress leakage. Dielectric isolation makes that leakage less sensitive to the subfin doping profile but adds removal and fill steps. It also weakens the direct thermal path through silicon, making the contacts, metal stacks and package more important for heat extraction. [24], [26] Fluorine is concentrated around selected Intel device structures in the maps. WF6 is a standard precursor for W nucleation and fill, while barrier films protect adjacent dielectrics from fluorine attack. Low-fluorine W processes reduce the residual-F burden. Chloride-based precursors avoid introducing F during W deposition, but require control of chlorine attack, nucleation and fill quality. The integration target is a continuous, low-resistance W path with a thin protective liner and minimal chemical damage to the surrounding stack. [20], [27], [28] The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page. We measured cell height, gate pitch, metal geometry, and ribbon dimensions at the XTEM sites shown below. The tables group these dimensions by site and device polarity. Our “sheet cuts” cross the silicon channel and show the ribbons end-on. “gate cuts” run along the channel through successive gates. The 18A logic cell dimensions point to a five-track logic library while the N3E and Intel 3 cell dimensions evidence a seven-track logic library. The DDR-PHY uses wider M0 wires and much larger spacing than core logic. That trades routing density for lower wire resistance and weaker coupling between neighboring nets. The geometry suits the current delivery and coupling requirements of analog, clock, and I/O circuitry. PowerVia lets 18A combine a compact cell height with wider M0 geometry by moving the main power rails off the signal-routing tracks. That relaxes local wire scaling while preserving a small cell footprint. Cell height and gate pitch set the geometric density; pin access and routability determine how much of it a real block can use. [29] The biggest takeaway from our gate-pitch measurements is that Intel 18A compute logic and TSMC N3E GPU logic have similar density in the Bohr representative-cell model. The 18A example is 18.6% denser than the Intel 3 GPU example. Gate pitches are nearly identical across the three sites, so cell height drives most of the difference. The Bohr model combines a four-transistor NAND2 spanning three gate pitches and a 32-transistor scan flip-flop (SFF) spanning nineteen pitches, weighting their densities 60:40. The sensitivity column shows how independently changing cell height and gate pitch by ±1 nm changes the result. This compares representative cell geometries; whole-die density also depends on cell mix and placement. The 18A P-core gives M0 substantially more metal cross section than the N3E vector engine. Treating each profile as a trapezoid gives 2.63 times the area per line and 1.84 times the area after normalization by routing pitch. The larger section reduces the geometric contribution to line resistance and lowers current density for a given current. Taller and wider wires also add capacitance, so circuit delay depends on the balance of resistance and capacitance. The DDR-PHY has less metal area per routing width than the 18A core fields, while remaining above N3E. [30] Area = height × (top CD + bottom CD) / 2, including liners. Area/pitch normalizes by routing width. Taper is the symmetric sidewall angle from vertical, with the largest angle belonging to the DDR-PHY. Compute tile The measurements show how ribbon dimensions and gate-stack geometry vary across the compute tile and between NMOS and PMOS to balance channel drive, gate load and the space needed for the dielectric/WFM stack across logic, SRAM and the DDR-PHY. Width mainly changes available channel perimeter; thickness also changes electrostatic control and carrier confinement. Gate-stack thickness then determines the space left for low-resistivity fill P-core and LP E-core logic Both the P-core and LP E-core use multiple nanosheet widths. Widths are measured on high-magnification XTEMs while wider-field images demonstrate additional width choices within the LP E-core. Multiple widths are expected even within an LP E-core. Timing-critical paths, buffers and cells with different fanout need different drive strengths. The lower-magnification fields show this width diversity beyond the sites quantified in the table. L2 and L3 SRAM GAA gives SRAM designers another way to balance the pull-up (PU), pass-gate (PG), and pull-down (PD) transistors. FinFET bitcells set device strength through fin count while GAA adds nanosheet width as a sizing knob. In a 6T SRAM cell, a strong pull-down relative to the pass-gate limits read disturbance, while a strong pass-gate relative to the pull-up improves writability. During a write, the pass-gate and write driver pull the node storing “1” below the inverter trip point. During a read, the pull-down holds the node storing “0” low. Bias, threshold voltage, mismatch and assist circuitry set the remaining margin. FinFET high-current cells commonly use a PU:PG:PD fin-count pattern of 1:2:2, a device-sizing ratio rather than a current ratio. Ribbon width lets Intel balance SRAM strengths without adding whole fins. The L2 cell uses its narrowest ribbons for PU and widest for PD, improving writability and read stability respectively. Intel’s disclosed HCC operates without assist; its denser HDC uses negative-bitline write assist. Pulling the selected bitline briefly below ground increases pass-gate overdrive so it can overpower the pull-up at lower supply voltage. That buys density and low voltage writability at the cost of boosting circuitry, switching energy, and additional voltage stress that must be controlled. [31], [32] Four rectangular ribbons give the perimeter = 8 × (width + thickness), before corner rounding. PG/PU is 1.49 and PD/PG is 1.16. The L3 structures closely resemble L2 in layout and cell height. Fewer L3 nanosheet widths are tabulated because fewer high-magnification images were available. DDR PHY The DDR-PHY trades density for controlled analog behavior and reliable off-chip signaling. It contains drivers, receivers, delay circuits, and calibration logic that set drive strength, sampling time, and voltage margin. Repeated four-sheet devices with similar widths fit the use of regular transistor units for matching and programmable drive. Its wider local wiring provides room for current delivery and separation of sensitive signals, while consuming more area than a dense core-logic grid. The layout serves the memory channel’s electrical requirements as well as digital logic density. [33] The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page. Intel 3 GPU devices Vector engine logic Intel 3’s XVE logic uses two-fin PMOS and NMOS devices with power rails in M0. Its cell height and M0 pitch give a seven-track geometry, two tracks more than the 18A logic. One-fin groups also appear among the two-fin devices. Intel 3 L2 SRAM The Intel 3 L2 SRAM uses the familiar HCC sizing pattern: one PU fin, two PG fins, and two PD fins. N3E GPU devices Vector engine logic The N3E XVE field contains repeated two-fin devices with seven-track cell geometry. N3E remains a FinFET process, giving Panther Lake a direct FinFET-to-RibbonFET comparison. N3E L2 SRAM The N3E L2 SRAM uses the same PU:PG:PD fin-count pattern of 1:2:2. Panther Lake-U follows Lunar Lake’s floorplan quite closely. Both pair 4 P-cores with 4 LP E-cores and NPU, media and display engines in similar locations. Lunar Lake also uses Xe2, the direct predecessor to Panther Lake’s Xe3 GPU. This makes Lunar Lake the most direct basis for our comparisons. Arrow Lake differs in core count and uses the older Xe-LPG GPU architecture, so we only use it where it offers a more direct component-level comparison. Compute tile Panther Lake compute-tile floorplans remain sparse even months after launch. Intel 18A’s backside metal and dielectric stack must be removed without damaging the underlying structures before a clean transistor-level floorplan can be imaged. Most published die shots hide or heavily process the background, but we are quite proud of the die shot we achieved and are excited to show the work we have done. We measured the areas of the key components on the compute tile and compared them with their Lunar Lake predecessors on TSMC N3B. These help us to capture changes in block area and compare the two chips across process nodes and designs. Our total tile areas exclude the scribe-line area. The compute-plus-GPU subtotal below uses the PTL-U compute tile and GT1 GPU; it excludes the I/O tile and passive base. Individual block areas use the boundaries marked on the floorplans The compute-plus-GPU row is recomputed from the displayed PTL-U and GT1 areas. Component rows use their stated per-region counts and are not an additive partition of the whole tile. The P-core area remains almost unchanged between Lunar Lake and Panther Lake, despite L2 capacity increasing from 2.5 MiB to 3 MiB. Arrow Lake uses the same Lion Cove core as Lunar Lake but also has a 3 MiB L2. Cougar Cove fits 20% more L2 into the same P-core area. The larger private cache keeps more of each core’s working set close to its execution units, reducing access to shared L3 and DRAM. Extra capacity adds storage leakage and lookup energy, so designers balance it against avoided lower-level accesses. The shared P-core L3 cache also shrank by 14.8%. [2] Cougar Cove combines a similar footprint with Intel’s reported power-efficiency improvements. RibbonFET’s tighter channel control reduces leakage, while PowerVia reduces supply droop and allows tighter voltage guardbands. [1] Darkmont’s four-core LP E-core cluster is 5.0% smaller than Skymont’s on Lunar Lake, with most of the reduction in its L2 regions. The 1 MiB region shrank by 8.4% and the 1.5 MiB region by 14.9%. The tag arrays also use one fewer visible row. Tags identify which memory addresses the data array holds, so rearranging them changes the cache’s layout and wiring without requiring less data capacity. [2] The LP E-cores share one L2. This pools capacity and avoids duplicating all the cache machinery, but the four cores contend for its banks and bandwidth. Their separate cluster also keeps light work away from the performance cluster and its L3, allowing that larger domain to sleep. [1], [2] Cache area includes more than the storage cells. Tags identify each line, decoders select rows, sense amplifiers read the small bitline signal, and wires connect to the banks. Splitting an array into smaller sections shortens wordlines and bitlines, improving access speed, but duplicates peripheral circuits. Panther Lake’s smaller cache regions therefore reflect the complete memory implementation, including how much of each region is devoted to storage. [34] Unlike Meteor Lake and Arrow Lake, Panther Lake has no separate SoC tile. The NPU, LP E-cores, memory controllers, PHYs, media and display engines now share the compute tile. This removes an active die and keeps CPU memory traffic on one die. The cost is moving PHY and I/O-related circuitry onto 18A: drivers, receivers and analog circuits must still meet external voltage, loading and signal-integrity requirements, so their area does not shrink like dense digital logic. [1], [2] The biggest shrink comes from the NPU, which occupies 36.9% less area. NPU 5 consolidates the same total INT8 MAC count into half as many neural compute engines. Each of the three NCEs has a larger MAC array to make the complete NCE envelope 22.6% larger than an NPU 4 engine. Consolidation also halves the number of scratchpads and SHAVE DSPs, from 12 to 6. The MAC array handles matrix multiplication and convolution, while SHAVE executes vector and custom operations that fit the array poorly. [1], [2], [35] The paired floorplans identify each NCE envelope and its scratchpad, MAC, and SHAVE regions. Each measured MAC polygon is counted once per NCE in the area accounting below. The scratchpads store weights, activations, and intermediate results near the MAC arrays, allowing repeated use without fetching them again from DRAM. Halving their number delivers the largest measured area saving but leaves less local storage for the same total MAC count. Layers that no longer fit locally require smaller working tiles or more transfers of intermediate data. The benefit depends on keeping the enlarged arrays busy while managing that tighter storage budget. [36] NPU 5 also adds native FP8. Using half the operand width of FP16 reduces storage and transfer demand, helping workloads fit the smaller local memory budget. Lower precision and format-dependent range make scaling and model validation part of deployment. Hardware activation functions further reduce work that would otherwise occupy the programmable DSPs. [1], [2] Microsoft requires an NPU to deliver at least 40 TOPS for Copilot+ PCs. Both Lunar Lake and Panther Lake meet this threshold, but Panther Lake uses significantly less silicon. GPU tiles Panther Lake is Intel’s first product with Xe3, its latest GPU architecture. It offers two different GPU tiles: a smaller GT1 tile with 4 Xe3 cores on Intel 3 and a larger GT2 tile with 12 Xe3 cores on TSMC N3E. Panther Lake allows us to compare the same GPU architecture across both Intel 3 and TSMC N3E. Wildcat Lake adds a third Xe3 implementation on Intel 18A. A future newsletter will detail Xe3 and its implementation differences across all three process nodes. GT2 scales Xe3 to a different physical layout, with render slices arranged vertically instead of GT1’s horizontal arrangement. Slice placement sets the distances to shared cache banks and the D2D interface. Those wires consume area and add delay, so scaling the number of Xe cores also requires a new balance of cache placement, routing and timing. [1] What’s immediately obvious is that the GT2 tile on TSMC N3E has much smaller Xe cores than GT1. These block areas include logic, caches, and routing. An Xe core on the GT1 tile is ~69% larger than one on Lunar Lake, and ~55% larger than one on GT2. Intel 3 therefore uses substantially more area per Xe core. The block-area gap exceeds the measured logic and SRAM density gaps, bringing routing, timing targets, cell mix, and floorplan allocation into the comparison. The measured vector/matrix engine region is almost unchanged between Lunar Lake and Panther Lake’s GT2 tile. Xe3 retains eight 512-bit vector engines and eight 2048-bit XMX engines per core. Its gains also come from feeding those engines more effectively: more resident threads hide stalls, and variable register allocation lets shaders trade registers per thread against the number of threads kept active. [1] The shared L1/SLM capacity increased by 33% from 192 KiB to 256 KiB, while its area increased only 5%, raising effective density by 27%. L1 retains reused cache lines, while software-managed SLM lets a thread group share data locally. Both reduce traffic to more distant memory. Allocating more SLM per group can also limit how many groups reside on a core at once. [1], [37] The GT1 tile carries 4 MiB of L2 against 16 MiB on the GT2 tile. GT1 divides its L2 cache into four 1 MiB banks, while GT2 uses eight 2 MiB banks. Each bank contains 128 macros, but each N3E macro stores 16 KiB, twice the Intel 3 macro’s 8 KiB capacity. The N3E macro is only 54% larger while holding twice as many bits, giving it 30% higher density: ~23.7 Mbit/mm² versus 18.3 Mbit/mm². Including bank-level circuitry, the gap widens to ~16.9 Mbit/mm² on GT2 versus ~10.4 Mbit/mm² on GT1. GT2 gains density with its macros storing more bits per unit area, and those macros occupy more of each cache bank. Larger macros spread decoder and sense-amplifier overhead across more storage, while a more compact bank layout reduces the share spent on control and routing. The compromise is longer wordlines and bitlines that carry more capacitance. [34] I/O tile Panther Lake uses two I/O tile variants, both fabricated on TSMC N6. The smaller one provides 4 PCIe 5.0 and 8 PCIe 4.0 lanes and serves lower-tier systems as well as those without a discrete GPU, while the larger one adds 8 PCIe 5.0 lanes, bringing the total to 20 lanes, for discrete-GPU connectivity. Panther Lake SKUs with the larger 10- or 12-Xe GPUs use the smaller I/O tile. [38] The smaller I/O tile adds a PCIe 4.0 block and a Thunderbolt block to Lunar Lake’s I/O layout, providing four additional PCIe 4.0 lanes and another Thunderbolt 4 port. Its repeated N6 blocks retain nearly identical areas and layouts. Reusing these proven PHYs and controllers avoids porting and requalifying external interfaces on 18A, where faster digital logic offers less benefit to circuits constrained by the off-chip link. [38] SemiAnalysis’s teardown lab (STEEL) dives deep into the world’s advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. We’re hiring technical experts from system to transistor and everywhere in between. Check out our Careers page. Panther Lake offers scalability and modularity through its disaggregated packaging that partition compute, GPU, and I/O silicon into separate tiles allowing for a suite of tile configurations. This partitioning makes the package part of Intel’s node economics as it determines how much leading-edge wafer area each product consumes, which functions can remain on other processes, and how much configuration freedom Intel can offer from a shared set of tiles. Furthermore, fabricating the compute and GPU tiles separately confines the new 18A process to the compute tile and allows graphics and I/O to use other, more established, and more cost-effective processes. For Panther Lake, the GPU and I/O tiles are assembled alongside the compute tile on a passive silicon base using Foveros-S. Intel’s current technology brief lists a nominal 36 µm pitch for Foveros-S. Through-silicon vias (TSVs) in the base connect the fine wiring above to the larger package connections below. The functional tiles sit side by side on that passive base in a 2.5D configuration. [39] Our cross-section through the compute and GPU tiles shows the package’s wiring hierarchy. Microbumps connect each active tile to the passive silicon base; its fine redistribution layer (RDL) carries the short, dense tile-to-tile links. TSVs carry connections through the base to the package substrate, which fans them out to the much coarser motherboard solder joints. The base supplies interconnect, while computation remains in the active tiles above it. [39] At the compute-tile edge, the higher-magnification inset shows a local microbump spacing of approximately 25.24 µm and a feature width of 12.33 µm. These local spacings are finer than Intel’s nominal Foveros-S value. The X-ray fields further confirm tighter neighboring bumps, consistent across every die-to-die area found on each tile. Additional X-ray analysis is offered after the paywall. Putting the memory controller beside the CPU removes the D2D transfer that CPU memory requests required in Meteor Lake and Arrow Lake. This avoids the extra transmitter, receiver, and link traversal, saving interface energy and latency. Panther Lake’s separate GPU still crosses a D2D link to reach DRAM, so its larger local caches also help contain package traffic. [1], [40] Smaller dies are less likely to contain a random fatal defect, and screening them before assembly prevents one bad tile from consuming a complete package of good silicon. Reuse also spreads design and qualification work across more products. Against those gains, Intel pays for the passive base, D2D circuits, extra bonding and test steps, and losses during assembly. Cost per working product across the portfolio captures the combined effect of wafer yield, reuse, test, and assembly. [29] Wildcat Lake packaging Intel launched Core Series 3, formerly Wildcat Lake, on 16 April 2026 for value mobile and edge systems. Wildcat Lake keeps 18A but removes the passive base and combines more functions on one die to simplify the package. The two products therefore reveal two distinct ways to commercialize the same leading-edge process. [41] Wildcat Lake’s 18A die combines up to two Cougar Cove P-cores, four Darkmont LP E-cores, two Xe3 cores and a smaller NPU. A separate platform-controller die supplies I/O, connected through UCIe, Intel’s first processor implementation of the standard. Consolidating graphics remove a tile boundary and the passive base, reducing assembly complexity for a modest-bandwidth value product. It also ties CPU and graphics scaling to the same die, giving up Panther Lake’s ability to swap in a much larger GPU. [42], [43] In July 2021, Intel CEO Pat Gelsinger set out an ambitious process roadmap aimed at regaining performance leadership by 2025, later described as five nodes in four years. Five years and one CEO later, Intel’s comeback story is not as unambiguously positive as Pat may have hoped. [44], [45] Intel once set the pace for process technology, bringing high-k metal gate technology and FinFETs into volume production years ahead of the rest of the industry. Its 22 nm FinFET process reached consumers with Ivy Bridge in 2012. [46] Intel’s integrated device manufacturing (IDM) model allowed its architects and process engineers to co-optimize products and processes. Starting with Sandy Bridge, Intel dominated x86, while AMD struggled with Bulldozer. That lead faltered at 14 nm and broke at 10 nm. Intel targeted a massive 2.7× density increase, but the node arrived years late and required several revisions before it could support Intel’s full lineup. This delay forced Intel to stretch 14 nm across six generations, while TSMC moved ahead in process technology and AMD recovered in x86. By 2019, Intel was still shipping 14 nm across most of its product stack, with its 10 nm client ramp focused on Ice Lake mobile processors. Meanwhile, TSMC was shipping N7 and N7+, and AMD’s Zen 2 compute chiplets used N7 to raise core counts and improve efficiency. Intel’s process failures were central to its decline, but unsound business decisions furthered their downward slide. Product delays compounded product mistakes, pushing client, server, and FPGA roadmaps off schedule. Several attempts to enter AI (Nervana and Gaudi) and networking (Tofino) also failed to establish lasting businesses. Intel’s recovery has focused on consumer CPUs and advanced packaging. Tiger Lake, Alder Lake, Lunar Lake and now Panther Lake have restored Intel’s consumer roadmap. On the process side, Intel 4 shipped with Meteor Lake, Intel 3 with Granite Rapids and Sierra Forest, and Intel 18A with Panther Lake. Intel has also made advanced packaging part of its foundry offering. However, Intel is still playing catch-up in servers. Several Xeon generations arrived years late and trailed contemporary AMD and Arm server CPUs in performance, efficiency, and core count. The process roadmap is back, but Intel does not hold the same process-technology leadership position it held prior to 10 nm. The introduction of gate-all-around nanosheets and backside power delivery are two of the biggest changes to transistor integration in a decade. Intel took on both changes at once: 18A paired its first RibbonFET with PowerVia in Panther Lake. Panther Lake is a substantial manufacturing milestone. Our cross-sections show how RibbonFET and PowerVia reshape local contacts and wiring, while the floorplans show where architectural consolidation and process choices save area. A sustained competitive lead depends on product performance, cost, yield, and the next implementation. The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page.. 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$10 Million Facility in the L. Michael Treadwell Oswego County Industrial Park marks the largest expansion outside of Germany in the company’s 73-year history By Stefan Yablonski [caption id=attachment_11076 align=alignright width=450] Daldrop SBB CEO Jens Daldrop addresses attendees at the 2025 groundbreaking for the project. Daldrop also chairs the advisory board of Germany-based Daldrop Group.[/caption] A new era of cleanroom technology is underway in Central New York. The Daldrop Group’s advanced manufacturing facility and U.S. headquarters is physically built within the L. Michael Treadwell Oswego County Industrial Park. This industrial park is located in the town of Schroeppel. It marks the largest expansion outside of Germany in the company’s 73-year history. Daldrop SBB is based in Neckartailfingen, Germany. It is a global supplier of cleanroom technology, primarily to the pharmaceutical industry. It designs and builds advanced cleanroom environments for the pharmaceutical, biotechnology and medical technology industries. It nvested $10 million in the new project. “We broke ground in 2025; we were under construction all winter. We just opened this spring, early spring,” said Benjamin Morrow, operations manager and control. The company consolidated sites in Salina and DeWitt into the industrial park in Schroeppel, Morrow added. “The next move here is to maximize every square inch of this facility and then we are already looking at the expansion. So, it is more capital investment on equipment — definitely higher-end automation in additional equipment so we can produce more components and then to support the ever-growing base in North America,” Morrow continued. “We are the headquarters for service, maintenance and spare parts. So as Daldrop has more and more installations, they need more and more service, maintenance and spare parts. So that will come out of this facility as well — it already is.” “As a global leader in GMP (global manufacturing support) pharmaceutical cleanrooms for decades, I am very proud to bring manufacturing jobs to Upstate New York,” said Mike Sullivan, president of Daldrop US operations. Key to choosing Southern Oswego County [caption id=attachment_11077 align=alignright width=450] Daldrop SBB at the L. Michael Treadwell Oswego County Industrial Park when the company announced the start of construction.[/caption] Sullivan said that the selection of the Schroeppel industrial park was mainly due to the help of Operation Oswego County and two people in the organization. “Prior to being purchased by Daldrop International from the Stuttgart region of Germany, Vince Bongio was a founding partner in SBB Inc. as well as our head of engineering. We based out of Syracuse due to Vince’s skills in HVAC and the manufacturing capabilities found in Syracuse,” said Sullivan. Bongio moved to Syracuse from California in the 1970s to work in Carrier’s Industrial Division of Large-Scale Petrochemical Refrigeration. Next, he advanced to General Electric’s TV Tube Plant where he got into cleanrooms ,leading to his role of head of engineering for Clestra Cleanrooms where he met Sullivan, their New England distributor. “Vince Bongio is a phenomenal engineer. Formerly of Carrier, he grew up in California and went to Cal Poly,” Sullivan explained. “Carrier hired him right out of college and he moved to Syracuse. He is the reason we are in Syracuse today. He is retiring this year. We are very proud and his legacy is having brought Daldrop to Syracuse.” In 2000, Sullivan, Bazinet, Bongio Inc (SBB) was formed with engineering and manufacturing, based in Syracuse, and sales and construction based in Massachusetts as it is today. “SBB Inc. started in Syracuse. I had a design–build contracting firm out of Massachusetts that was primarily doing all the new technologies coming out of MIT,” Sullivan said. “I started a manufacturing side. A big thing for cleanrooms is the HVAC. Most cleanroom suppliers are architecturally focused people. The strength in Syracuse is HVAC. So, SBB developed with me running sales and construction out of Massachusetts and manufacturing out of Syracuse.” “Daldrop wanted to have a relationship in the States and of those who approached us, they were the only ones who really understood HVAC. So, we were the right fit for them. We did a joint venture focused out of Massachusetts from 2012 to 2018 leveraging their technologies,” Sullivan explained. “The commitment was if we brought their product to the States, we would do that if they built it here. “The pieces that had to be in place to make the investment, they wanted to acquire us, we were great with that. If you looked at business recommendations the general guidance was to build in a low labor area — something like North Carolina — but Syracuse had a strong background in HVAC and we chose Syracuse and Oswego County to be our headquarters in the States. So, it is built off of history, technology and the existing supply chain — bringing jobs back to the area.” During the initial discussions with Daldrop about coming to the U.S., SBB agreed to sell under the conditions Daldrop would manufacture in the U.S. There are many areas that offer incentives and economic packages, but the strength of HVAC expertise and skilled manufacturing was a big part of the discussions for site selection. Coming home [caption id=attachment_11078 align=alignright width=451] Construction moves forward in March at the L. Michael Treadwell Oswego County Industrial Park.[/caption] The second key person to building in Oswego County is Ben Morrow, Sullivan added. “Ben has been working with Daldrop SBB for more than 12 years and has advanced to COO of manufacturing and engineering. Ben grew up in Phoenix, so building a factory for the Germany company in Phoenix is a strong success for both his community and the appreciation of Ben’s skills as a team leader,” Sullivan said. “I went to high school in Phoenix. So, this is like full circle for me. It’s a small world,” Morrow said. “I hadn’t been back to Phoenix since graduation. This is one of the properties that John Trimble of C&S, he is the former president of C&S, he just retired, suggested. He and I were very good personal friends. John was from Mexico and I was from Phoenix. We knew each other from high school. And the architect of this building, Ed Smart of smartDESIGN Architecture in Batavia — I went to high school with him. So, this was a project that’s full circle a coming home kind of thing. The three of us knew each other — kind of like it was meant to be. Very serendipitous.” Schroeppel was one option for Daldrop to consider; the original intent was just to get a warehouse to store some product, he added. The facility is Daldrop’s largest outside of their native country. Total payroll at the facility will be approximately $2.4 million once fully staffed. “Here is 32,000 square feet and we plan to expand and put in an additional 10,000 square feet,” Morrow said. “We have 17.5 acres. We can put at least three more facilities here, just on this property. The master plan submitted for the current building is the first of possible three buildings on the campus.” “If we can find the right people and advance the production according to the plan, we should be able to grow for the next decade. One of the first jobs we filled was our new HR manager, with a primary focus posting and filling new positions,” Sullivan said. Stop the exodus, start hiring [caption id=attachment_11080 align=alignright width=452] Principals at the local Daldrop SBB headquarters, from left: Ben Morrow, Mike Sullivan and Jens Daldrop.[/caption] “I have been coming to Syracuse for 30 years. One of the things I had a hard time watching was the exodus of factories. One of the toughest things is to watch it with my partners’ kids who had to move away for jobs. It is important for us to give opportunity where people’s kids don’t have to leave the area to get work,” Sullivan said. “My responsibility is to find people who have skill sets that want to work and then I have to build opportunity for that work to happen. “After years of watching companies and Vince’s three sons all move out of the areas to get jobs, it is important to us to provide opportunities for the Syracuse region and help grow our company. We have been hiring for our new factory and will continue for the next few years.” “We are hiring and will continue to hire. Currently we have about 19 on staff right now,” Morrow said. “We expect to grow that by about 10 to 15 in the next 12 to 18 months or so. We are at 19 currently — one in the wings. It’s been great being able to hire locally. All these folks that we’ve been hiring, they all live within a few miles from here.” “We hired someone this past week (end of August). She grew up in the area, raised a family and is working down in Florida. She just took a job with us so she can move back and be with her family. We will be moving her back and she should be starting in October. We are very happy to see this happen,” Sullivan said. “I feel strongly about having a spot for the kids to not have to move out of the area. It is better to have people moving into the area.” Currently, Daldrop SBB has openings for finance manager, COO of construction and delivery, as well as mechanical, electrical designers and Revit modelers, construction managers, commissioning agents and many other skills that are needed. Along with Daldrop’s reputation in life science cleanrooms, there is a strong history in semiconductor, electronics, glass, photonics, aerospace and other markets. This may be helpful with any new technologies building in the market such as the Micron expansion and the support network, Sullivan said. “We acquired this property and closed on it two months before any announcement from Micron. It is serendipitous that they’re right down the street from us,” Morrow added. “Everybody started thinking ‘you guys are supporting Micron.’ We were here first. That is not a goal of ours. We may or may not … they are talking to us; it is an opportunity.” The long run [caption id=attachment_11079 align=alignright width=450] Benjamin Morrow, operations manager and control at Daldlrop, speaks during a recent ribbon-cutting event in Schroeppel.[/caption] “Long term, we will expand the Phoenix facility,” Sullivan said. “We built our facility with a campus approach. Sustainability is big. We designed our rooms to be more sustainable. Our building has no gas lines for heat. We put geothermal wells in the ground. We put heat pumps in for heating and cooling out of those wells and we put a large layer of solar panels up on the roof. We worked with National Grid for metering. Our building is a high efficiency model. We upgraded all the instillation and the glass filtering. So, it is a very green building. We will have a very minimal carbon footprint. It also adheres to LEED (Leadership in Energy and Environmental Design) construction standards.” “We are a bunch of HVAC engineers. We did a large scale geothermal and spent the money up front because we knew it made sense in the business sense in the environmental sense and sustainability,” Morrow said. “We have insulated metal panels on walls and roof; we are an envelope from the exterior.” Daldrop, as a global player, has a strong culture of sustainability that is found in all its products including the new facility. The building has been designed with (sixteen) 400-foot deep geothermal wells, high efficiency construction methods, approximately 70 kilowatt solar photovoltaic panels, electric vehicle chargers and 26% recycled content. “Daldrop thinks of long-term investing,” Sullivan said. “On the roof, photovoltaic panels supplement our power. Over half the energy that I use is coming from the sun. We have chargers up front for employee electric vehicles. This place is built to last. This slab that we are walking on, normal buildings are four inches, some go to six inches, we are nine inches all the way through — except where the heavy equipment is — that is 10 to 12 inches thick, solid concrete. It allows us to reconfigure for whatever type of equipment we want to bring in,” Morrow said. “We are authorized by Underwriters Laboratory to self-certify so we don’t need to have an inspector come out and recertify. We get audited often, but we certify our own electronics. The control system in this building is rather high-end. Our thermostat in every room is zoned, independent. We analyze the data; incorporate it with our solar panels.” “There is a lot of competition for people to work. It’s not just about how much salary they are going to make — it’s about the work environment, the ability for stability. We want to make sure our employees have the best environment to work in,” Morrow added. Similarities “One of the reasons I believe why Daldrop chose this area, Phoenix in particular, is because it is a village, a river-based village. Neckartailfingen in Germany where Daldrop is based is also a river-based village, manufacturing community. So, there is a lot of similarities — that smalltown feel,” Morrow said. “We have a lot of connections through multiple employees that lead back to Carrier, also. Everything came together, the timing everything.” “We are thankful for all the economic development support. Everyone has been helping make this happen. So, keep it up, it is working, that is all I got to say, Sullivan said. “If you look at historical industrial manufacturing, this region has skills that have been un-utilized. The northern industrial region has a lot of skills that if we can tap before they go away, we can leverage them. That is what we are trying to do. You’d be surprised at the supply chain left behind from Carrier — that supply chain is still there.” “Operation Oswego County has been fantastic,” Morrow added. “I can’t say enough good things about that group.” What Is Cleanroom Technology Cleanroom technology is a system of specialized engineering, filtration and operational controls used to maintain an extremely low concentration of airborne particles, microbes and chemical vapors. How It Works • Air Filtration: Uses HEPA or ULPA filters to remove 99.97% of tiny particles down to 0.3 microns. • Airflow Control: Directs air in a steady, unidirectional (laminar) or filtered turbulent pattern to push dust away from work areas. • Environmental Regulation: Maintains precise control over temperature, humidity and positive air pressure to block outside air leaks. • Specialized Attire: Requires personnel to wear full-body garments (“bunny suits”), gloves and masks to stop human shedding
Thermal Grizzly prepares WireView Pro II Noctua Edition for 12V-2×6 GPUs
Thermal Grizzly is turning WireView Pro II into a quieter Noctua version Thermal Grizzly is preparing a Noctua Edition of its WireView Pro II GPU power
Voyager 2 is nearly 50 years old, losing about 4 watts of power every year as its plutonium power source fades — and NASA just bought it at least another year of science with an all-at-once power-system swap engineers called the “Big Bang,” performed on a spacecraft with razor-thin power margins and no possibility of physical repair.
The Big Bang swap freed almost 10 watts while preserving Voyager 2's thermal balance, keeping its three remaining interstellar instruments on for at least another year.
Apple’s Smaller M5 Pro MacBook Pro Suffers From Severe Thermal Constraints, With Larger 16-Inch Model Being 30% Faster With Just 3 Extra Cores
In one CPU-focused benchmark, the 14-inch MacBook Pro is unable to cool the M5 Pro properly, leaving the 16-inch M5 Max model to register a major performance difference
AORUS RTX 5090 owner checks GPU after higher fan speeds, finds thermal gel mess
A GeForce RTX 5090 AORUS owner has opened the card after more than a year of use (and end of warranty) and found a large amount of factory-applied thermal…
Five Berkeley Lab Scientists Receive DOE Early Career Research Awards
Five scientists from Lawrence Berkeley National Laboratory (Berkeley Lab) have received Early Career Research Program (ECRP) awards from the Department of Energy. The ECRP program, now in its 16th year, was established to bolster the nation’s scientific workforce by supporting exceptional researchers at the outset of their careers, when many scientists do their most formative work. Recipients use the funding to pursue projects that have the potential to solve scientific challenges and advance the country’s STEM capabilities. To be eligible for the program, a researcher must be an untenured, tenure-track assistant or associate professor at a U.S. academic institution, or a full-time employee at a DOE national laboratory or Office of Science user facility, who is within 10 years of having earned their doctorate. Awards to an institution of higher education will be approximately $875,000 over five years, and awards to a DOE national laboratory or Office of Science user facility will be approximately $2,750,000 over five years. This year’s Berkeley Lab awardees and their projects are listed below: Timon Heim: Better detectors for more powerful particle colliders Timon Heim is a staff scientist in the Physics Division. His ECRP project will develop a new type of detector that can track the particles generated by collisions in particle colliders with high spatial and temporal resolution. Current detectors in use at high-energy colliders, like the ATLAS detector at the Large Hadron Collider (LHC) at CERN, can track the trajectory and measure momentum of particles, but they can’t track a particle’s time of arrival with sufficient precision to discern from which of the many particle interactions they originate. Heim’s proposed technology — called a 4D tracking detector, because it captures data about particles’ positions in space and time — aims to solve this challenge, allowing researchers to glean more precise data from collision experiments to uncover new insights into fundamental forces and potentially discover new particles. The enhanced capabilities of 4D detectors will be a necessity for experiments at future colliders, such as the Muon Collider or Future Circular Collider. The project will develop custom microelectronics that process the signal of a pixelated silicon sensor that can register charged particles passing through it in an extreme radiation environment that these colliders produce during operation. The goal is to measure individual particles’ position with 50-micro-meter spatial and 50 pico-second (one trillionth of a second) temporal precision, for an incoming flux of around 1 billion particles per second per square centimeter. Harrison Lisabeth: Studying underground processes to unleash abundant energy Harrison Lisabeth is a research scientist in the Energy Geoscience Division focused on combining real-world experiments and AI to guide development of geothermal energy systems. His project will explore how deep underground rock formations – where geothermal wells are dug – are stressed by chemical reactions of the minerals and mechanical strain from movements in the Earth. A better understanding of subsurface stresses is essential to engineer safe and reliable geothermal wells that access the heat of deep rocks to produce electricity. It is estimated that the U.S. could generate ten times the amount of energy needed to power the grid using geothermal sources. Lisabeth plans to simulate how minerals grow, dissolve, and influence the behavior of surrounding rock in geothermal reservoirs by tracking chemical changes in rock samples under pressure in the lab. The project will also develop machine learning models to predict geologic strain based on field measurements and refine existing models that describe how common rock types deform under stress. Combining these approaches, Lisabeth hopes to develop a framework to predict stress to improve stability and longevity of geothermal wells. Daniel Carney: Pushing the quantum boundaries of particle measurement Daniel Carney is a staff scientist in the Physics Division who uses quantum information science to study particle physics and gravity. At very small scales, “quantum noise” — random fluctuations from the act of measurement — can drown out faint signals from rare processes. Carney’s ECRP project, “Fundamental Physics at the Quantum Limits of Measurement,” aims to build a new mechanical quantum sensor that can measure extremely small particle interactions below the limits of that quantum noise. The approach uses lasers to hold a tiny bead containing radioactive atoms; when one decays, the system measures the bead’s motion and the energy of any particles emitted. The experiment’s initial goal is to search for heavy sterile neutrinos, hypothetical particles predicted by some extensions of the Standard Model. The system could also help measure the mass of the neutrino, study the way particles interact through the electromagnetic and weak forces, and hunt for low-mass dark matter — all unsolved mysteries in particle physics. Callum Wilkinson: Using machine learning to demystify neutrinos Callum Wilkinson is a staff scientist in the Physics Division and part of the international Deep Underground Neutrino Experiment (DUNE) hosted by Fermi National Accelerator Laboratory. DUNE will create an intense beam of neutrinos that interact in detectors in Illinois and, after an 800-mile journey through the earth, in massive detectors in South Dakota. By precisely measuring neutrinos and how they change, researchers will get a better understanding of their fundamental properties and whether they are responsible for why there is so much more matter than antimatter in our universe. Wilkinson’s ECRP project will apply two machine learning techniques to improve the analysis of DUNE’s data and enhance the experiment’s precision. One approach will look for hidden patterns in how neutrinos interact and produce low-energy particles, while the other will help correct for distortions in what the detectors record. The methods will be tested on one of DUNE’s prototype detectors and could be used in other neutrino experiments, improving their measurements and helping scientists build better models. Aditi Krishnapriyan: Machine learning methods that scale as datasets grow Aditi Krishnapriyan is a faculty scientist in Berkeley Lab’s Applied Mathematics and Computational Research Division (AMCR) and assistant professor at UC Berkeley. Her project, awarded through UC Berkeley, will develop machine learning methods that scale with dataset size for modeling complex, multi-scale phenomena. The resulting tools can be applied in a wide range of research, including the study of new electrolytes for batteries or the examination of molecular interactions. ### Lawrence Berkeley National Laboratory (Berkeley Lab) is committed to groundbreaking research focused on discovery science and solutions for abundant and reliable energy supplies. The lab’s expertise spans materials, chemistry, physics, biology, earth and environmental science, mathematics, and computing. Researchers from around the world rely on the lab’s world-class scientific facilities for their own pioneering research. Founded in 1931 on the belief that the biggest problems are best addressed by teams, Berkeley Lab and its scientists have been recognized with 17 Nobel Prizes. Berkeley Lab is a multiprogram national laboratory managed by the University of California for the U.S. Department of Energy’s Office of Science. DOE’s Office of Science is the single largest supporter of basic research in the physical sciences in the United States, and is working to address some of the most pressing challenges of our time. For more information, please visit energy.gov/science.
Scientists identify design rules for the best thermoelectric materials
Researchers from Tokyo Metropolitan University have used a theoretical framework to derive design rules for creating new thermoelectric materials. The efficiency of converting thermal energy to electricity ...
Scientists learn how mosquitoes are able to track and bite humans
Researchers found that infrared radiation from a source at roughly the temperature of human skin doubles mosquitoes’ host-seeking behavior.
Thermal Grizzly DeltaMate MPII supports AM5, AM4, LGA1851 and LGA1700, AM5 priced at $409
Thermal Grizzly has introduced its DeltaMate CPU Block MPII, a custom-loop CPU water block for AMD AM5 and Intel LGA1851 systems.
University of Iowa propels space science forward with opening of spaceflight lab
In order for scientists to know how equipment will fare in space, they must test tools in a variety of manners — vibrations, thermal changes, if materials will warp when
New tectonic plate boundary could be forming in Zambia, scientists say
Isotope analysis of gas from geothermal springs in Zambia could show that a new continental rift is forming, scientists say. Unexpectedly high helium isotope ratios indicate that a weakness in Earth's ...
Katalyst Wraps Testing at NASA Goddard for Swift Boost Mission
A daring mission to lift NASA’s sinking Neil Gehrels Swift Observatory is now one step closer to launch this June.
Terra Adjusts Instrument Operations to Extend Mission Life
The thermal infrared capabilities of an imager on NASA’s Terra satellite have been shut off and will no longer collect data, more than 25 years after the
A colossal magma system has been hiding beneath Tuscany
A massive magma reservoir has been detected deep beneath Tuscany, despite showing no obvious signs at the surface. Scientists mapped the roughly 6,000-cubic-kilometer body using natural ground vibrations recorded by dozens of seismic sensors. It poses no immediate danger, but the discovery reveals how enormous volcanic systems can remain hidden and could transform the search for geothermal energy and critical minerals.
Ahuachapán and Its Restive Neighbors
From a geothermal hotspot to the one-time “Lighthouse of the Pacific,” the heat is on beneath the volcanic landscape of western El Salvador.
AMD Bundles Carbice Ice Pad with Ryzen 7 5800X3D
Carbice, a U.S.-based developer and supplier of next-generation carbon nanotube thermal interface materials (TIMs) and high-performance cooling solutions, today announced that the Carbice Ice Pad is shipping with the relaunched special edition 10th Anniversary AMD Ryzen 7 5800X3D chip. The bundle br...
The core anti-Pangram constituency is phony writers
Welcome to The Closing Argument, our verdict on the news, plus everything The Argument published and appeared in this week. The Verdict, by Kelsey Piper A lot of people hate AI for drowning the internet in slop and displacing human creatives. You might think that these people would be thrilled by a program that can identify and flag AI-generated work. But many people who hate AI also hate Pangram, an impressively accurate AI detector that produces very few false positives, according to high-quality independent research. This loathing found its most recent expression in a bizarre Wired article that amplifies a wide range of false arguments from Pangram skeptics: that AI detectors are racist (they’re not) or ableist (they’re not)1 or don’t work (this one does)2. Rather than starting from the premise that it would be really valuable to have a working AI detector and scrutinizing Pangram to make sure it lives up to that promise, the article starts from the premise that Pangram obviously has bad vibes and sets out to discover why. (One answer: The CEO microwaved lunch during an interview!) Why aren’t writers who resent Pangram more eager to distinguish themselves from posters who are having ChatGPT ghostwrite all their work? There are a few different things at play, but I think one key dynamic is this: These are often the same people. A core constituency for arguments like Wired’s is “writers” who are using AI to write their posts but resent this fact being made public. They stand to lose from AI detectors because AI detectors call them out. Share When Substack announced a partnership with Pangram, a sizable fraction of the platform’s authors rose up in outrage. Some people had experience with other AI detectors that didn’t work, and some felt that AI writing ought to be encouraged — both of which are fair enough. But the fury was fueled by authors passionately insisting that Pangram kept wrongly accusing them on almost every post they published. Pangram can be wrong, especially on short passages. But in the overwhelming majority of cases where Pangram looked at a whole blog post rather than a single paragraph, the program correctly detected work as AI. Even if we can’t be 100% sure in any individual case, we can notice the trend in the aggregate. Wired quotes Sam Illingworth, a professor of critical AI literacy at Edinburgh Napier University, who said, “I don’t think [AI detectors] work. … I think that detectors are prejudiced against certain people.” This spring, he said that he used AI for research and editing; this summer he acknowledged that in addition to research and editing, he also uses it “now and then for a turn of phrase I keep.” Pangram informs us that most of his posts are 100% AI-written (some are mixed AI-and-human) and that 100% AI-written posts started appearing last year. The favorable interpretation is that, as someone whose recent work Pangram consistently mistakes for AI, Illingworth sees Pangram’s flaws firsthand. The unfavorable interpretation is that the tool’s credibility trades off against his own, because its account of who writes his posts is not consistent with his. Illingworth is not alone in insisting the detector does not work. “It’s a Monday night in late July, and I’m pasting my own Substack draft into an AI detector for the first time. Not because I’m worried. Because I’m curious. I wrote every word of it myself, the way I write everything, out loud in my head first, in a rhythm that still carries the accent of a language I learned to think in before I learned to write in this one,” begins one Substack post by an author indignant that Pangram flags her writing as AI. “That’s the part I had to sit with before I could write this.” If you, like me, have worked with AIs a lot, you won’t even need Pangram there. The author of that piece is AI. It is obviously AI! I checked 10 other posts on the blog, and they were also obviously AI! “I have spent 22 years as an award-winning author and essayist. And now this bullshit tool that learned from MY writing is going to accuse me of plagiarism,” popular Substack writer Carlyn Beccia wrote in an anti-Pangram post. “For the last and final time, AI DETECTORS DO NOT WORK.” Here’s what her writing sounded like in 2020: “Most success stories revolve around one person who believed enough in you to say — give it a try. We call these people muses, but they are so much more than that. They are the strong man giants whose shoulders we stand on so we can see the horizon. Throughout the editing process, I am sure my editor felt less like a giant of greatness and more like Atlas with the world on her shoulders.” Pangram says it was 100% human-written. (So were other articles of hers in 2020.) And here’s what it sounds like now: “And then there is the reshuffling, which sounds like paperwork until you remember that empires have always loved paperwork. The Trump regime recently moved special education oversight from the Education Department to HHS. That is not a minor bureaucratic transfer. It changes the frame.”3 Pangram says this is mostly AI. I am not convinced that Pangram is wrong. In my own experience, Pangram is very effective on long texts — if it marks a long essay as AI, the essay was either written by AI or deliberately written to sound like AI. On tweet-length or paragraph-length texts, it’s not perfectly reliable. It seems to work just as well for non-native English speakers as for native speakers. While I have seen dozens of claims of pre-2022 text returning a positive result on Pangram, I have tried repeatedly to corroborate those and have never once succeeded. To be clear, I’m absolutely not saying that complaining about Pangram suggests a writer is a cheat. There are plenty of other concerns. Most are mistakenly premised, such as the false claim that Pangram trains on work you put into it, but others are reasonable: It’s unreliable on sufficiently short text segments; it creates an internet witch-hunt mentality when there are defensible uses of AI; people who are open about their AI use are sometimes blamed, when the only people really doing something wrong are the ones who hide it; and it isn’t perfect, so a single positive result shouldn’t be taken as decisive proof of misconduct. I’m happy to concede that Pangram is imperfect and possible to over-rely on. If an author’s posts are mostly non-AI and one scans as partially AI, this could be a mistake. It’s also possible to defeat Pangram with intentional effort. If you think we need something more robust and more reliable, fine! But if you don’t like AI and don’t like Pangram, your attitude really ought to be that it’s a shame that our existing tools for AI detection are imperfect, and it’s important to invent better ones. If your stance is instead that AI is evil and so is looking for AI, then ultimately you’re contributing to the sloppification of the internet. You’re making it harder for people who write their own text to distinguish themselves, and providing cover for authors who are definitely not writing their own text. Subscribe Top stories this week, by Kobe Yank-Jacobs Commentators often worry that the decline of reading could mean the decline of liberal democracy — but deliberative governance actually predated widespread literacy. This week, Maibritt Henkel pointed out that many liberal cultures thrive on a culture of raucous, interactive debate, which can happen in-person as easily, if not more so, than in text. Read on, dear reader, to learn more. It may actually cheer you up: [ ](https://www.theargumentmag.com/p/reading-wont-save-liberalism) [ Reading won’t save liberalism ](https://www.theargumentmag.com/p/reading-wont-save-liberalism) Maibritt Henkel · Sep 1 [ Read full story ](https://www.theargumentmag.com/p/reading-wont-save-liberalism) It used to be bad to downplay climate change (if we mean denying its reality). Today, it’s actually good to downplay climate change (if we mean keeping the issue out of political fights so we can make real progress). This counterintuitive view is called “climate hushing,” and contributor Alex Trembath argued that it’s the key to enacting good policy going forward. Get up to speed on the latest in climate politics: [ ](https://www.theargumentmag.com/p/we-wont-stop-climate-change-by-talking) [ We won’t stop climate change by talking about it ](https://www.theargumentmag.com/p/we-wont-stop-climate-change-by-talking) Alex Trembath · Sep 2 [ Read full story ](https://www.theargumentmag.com/p/we-wont-stop-climate-change-by-talking) Canada’s Prime Minister Mark Carney is standing up for the forces of liberalism against Donald Trump’s assault on our closest ally. So, why is one prominent left-wing commenter attacking Carney? Columnist Matthew Yglesias explains: [ ](https://www.theargumentmag.com/p/when-economic-liberty-means-central) [ When "economic liberty" means central planning ](https://www.theargumentmag.com/p/when-economic-liberty-means-central) Matthew Yglesias · Aug 31 [ Read full story ](https://www.theargumentmag.com/p/when-economic-liberty-means-central) 🌟Abundance Wins of the Week🌟 Shout out to my home state of California, whose legislature passed two housing bills this week. One requires a housing density minimum in transit-oriented areas of the state’s most transit-rich cities (Los Angeles, Sacramento, San Francisco, Oakland, San Jose, San Diego, and Long Beach). Another bill closes two common loopholes used by third parties to delay housing projects, including an opportunity to challenge maps of a given lot created by the developer after a project has been approved. Shout out to our big-state rival, Texas, where pro-housing SB 785 took effect this week. The new state law requires municipalities to have at least one district permitted for manufactured housing without a special permit. This will promote zoning changes in 44% of municipalities. The company Fervo Energy signed a deal with Google for what is set to be the world’s largest enhanced geothermal facility, proving a technology can work at a scale that could be crucial to a decarbonized, energy-abundant economy. Share Worth watching… This week, forecasting legend Nate Silver joined Jerusalem, Matt, and Jeremiah on a crowded episode of the pod. It was a party. And speaking of parties, our round table debated the factional lines within the Democratic Party: Is it possible to be center-left and also anti-establishment? Watch or listen to find out: The Rio Grande Valley in Texas is one of the areas that swung hardest toward Trump in 2024, but musician Bobby Pulido is running to flip it back. Right now, The Argument/Split Ticket’s model has him running 1.1 points behind his Republican opponent in a district Trump won by 18 points. Tune in to find out how he differs from national Democrats and what he thinks he can to do win this seat. On Thursday, Bernie Sanders was among the first politicians to call for a ban on superintelligence. My guest this week, Andrea Miotti, has been lobbying to ban superintelligence for several years, most recently in the U.K., U.S., and Canada. I asked him how he gets legislators to take speculative risks seriously, and we dug into what plans might look like to actually pass a ban. Listen to learn more: What’s News with The Argument The Argument recommends, by Kobe Yank-Jacobs If we ever lose track of Justin Zuckerman, I’ll have the team split up and check all the movie theaters in the city. I’m shocked (and a little jealous) at how often he gets out to see good cinema. This week, he brings us It Ends, a “horror-ish movie,” which he described as a “Gen Z Waiting for Godot.” I was intrigued before he added that it was “funny, dark and existential” — at which point I was fully locked in. I guess I also had existential themes on the mind this week. One morning, a single line from a poem I read long ago just came to me: “Is death a stretch of time in which a life is just a flash?” The poem is called “From 20,000 Feet” by Heather McHugh. I suggest the version in The Vintage Book of Contemporary American Poetry, which, by tradition, my best friend and I always bring backpacking, extra weight be damned. We’ll stay thematically dark for just one more rec from senior editor John Robert Thomason, whose upcoming trip to Baltimore reminded him to suggest Michael Clune’s memoir White Out (about being addicted to heroin in Baltimore in the 1990s). Ben Lerner’s blurb called it _“_Disturbing, brilliant, hilarious—it’s as if Proust had written Jesus’ Son.” John told me this “seems accurate, with the caveat that I’ve never read Proust.” I, personally, have also shelved Proust until retirement. At this point, I was a little concerned for the team since all of us tossed out such psychologically grim material — maybe we’re all down about the end of summer — but thankfully, at least a few of us were into more upbeat selections. Milan Singh recommended Made In’s 5-quart stainless clad saucier, suggesting he had some fun in the kitchen. Jeremiah Johnson asked if he could recommend yet more Carly Rae Jepsen. Once denied, he offered up Game Changer instead_,_ calling it “the most wildly creative game show, maybe in the entire history of the genre.” Eli Richman mentioned _Lucky, “_a B-tier show with an A-tier cast and an S-tier theme song.” I suppose he was recommending the song, Horns of a Bull. Still, despite these cheerier recs, I couldn’t help but be concerned that we were subconsciously worried about racing toward summer’s end — the end of swim trunks and splashing around. Then a message landed reminding me of the three-day weekend to come. A whole extra day for sunshine. One more swim in the lake. I was grateful this called to mind yet another line from a poem, one by Mary Oliver, the patron saint of every gorgeous summer day (and about whom a documentary is now out). Speaking to God in the poem “Thirst,” she wrote: grant me, in your mercy,a little more time. Love for the earthand love for you are having such a longconversation in my heart. We have merch! We have quarter-zips, keychains, hats, and stickers. Each one is a great conversation starter in its own way. Buy them here. Subscribe More to read: [ The Opening Argument ](https://www.theargumentmag.com/p/seeing-like-an-elite)[ Seeing like an elite ](https://www.theargumentmag.com/p/seeing-like-an-elite) Kobe Yank-Jacobs · Sep 4 What do Americans hear when they watch Sen. Bernie Sanders or Vice President JD Vance rail against the elite? Are they thinking of right-wing tech billionaires? Imperious college professors? Liberal magazine writers? [ Read full story ](https://www.theargumentmag.com/p/seeing-like-an-elite) [ The Weekly Scroll ](https://www.theargumentmag.com/p/god-is-back-on-the-timeline)[ God is back on the timeline ](https://www.theargumentmag.com/p/god-is-back-on-the-timeline) Jeremiah Johnson · Sep 5 This week, we’re talking about Substack’s new religious debates, the continuing MAGA influencer scandal, how to retire from YouTube, and aura battles. [ Read full story ](https://www.theargumentmag.com/p/god-is-back-on-the-timeline) 1 This was a legitimate thing to worry about, but doesn’t seem to be a problem given the actual technology: Marijke Van Vlasselaer, Filip Van Droogenbroeck, and Bram Spruyt’s 2026 paper looks at whether Pangram is less accurate when evaluating the work of non-native speakers of English. It isn’t. That’s because Pangram isn’t really looking at how “unusual” a piece of writing is but whether it has the characteristic patterns of LLMs. The Wired article makes an odd gesture at a different Pangram-is-racist argument. There were several controversies this summer during which upcoming books were canceled after being discovered to be AI-written: “The three novels mentioned earlier — Shy Girl, Daggermouth, and Call Me, easily publishing’s biggest AI-detection scandals — were all written by writers of color.” But come on! As Zvi Mowshowitz put it: “They were not primarily written by people of color. They were primarily written by AIs.” That’s the whole problem! And as my colleague Jeremiah Johnson recently observed with respect to Cambridge’s Arday scandal, a community being unwilling to call out fraud if it’s perpetuated by people of color is not an anti-racist tendency; it is ultimately quite racist. 2 Many non-Pangram detectors don’t work, but many possible airplane designs also don’t work, and no one considers this a general argument against aviation; the thing that matters is whether any detection works. 3 The phrase “empires have always loved” mysteriously became all the rage in the last few years. See here, here, here, here and here. Before 2025, the only use of that phrase I have been able to find is a single Tweet. The logic of the sentence, too, is incoherent in an AI-characteristic way. “...sounds like paperwork, until you remember that empires have always loved paperwork”? Does remembering that make it sound less like paperwork? It’s a craft-ful sentence, but what is it actually saying??
Apple iPhone 18 Pro Max gaming test shows up to 69% less performance loss than iPhone 17 Pro Max
I think it’s safe to say that the iPhone 18 Pro Max’s sustained thermal performance is pretty nice.
Exploring the ocean depths: FIU scientists descend to world’s deepest hydrothermal vents
An FIU research team recently returned from a month-long expedition in the Caribbean where they explored how shrimp find their way to this extreme environment without sight.
Optical condensation using a fiber-based photothermal module
The system achieves about tenfold higher collection efficiency than conventional approaches, enabling the assembly of approximately 10,000 microparticles or bacteria in just 60 seconds.
Is SMIC N+3’s Metal Pitch Smaller than Intel 18A’s?
Almost four years ago, we published that SMIC had started shipping 7 nm (N+1) chips. Now, SMIC is shipping its third-generation 7 nm (N+3) process in Huawei’s Kirin 9030, with a minimum metal pitch of 32.5 nm, about 10% tighter than the 36 nm minimum metal pitch shipping in Intel’s latest Panther Lake CPUs on 18A. The headline is true, but incomplete cherry picked metric. N+3 reaches the density of TSMC N6 through aggressive DUV multi-patterning and design-technology co-optimization (DTCO), but it pays for that in complexity, efficiency and process control. We found this and more in our reverse engineering and teardown where we cover SMIC’s N3 process technology, Huawei’s packaging, memory, architecture, and more. SemiAnalysis has been building a state-of-the-art teardown lab in Oregon capable of analyzing the world’s most advanced and important chips over the last year and half. We have already generated revenue on advanced datacenter chip teardowns including our recent reverse engineering of a major TSMC customer’s COUPE CPO optical engine + EIC 3D stack. This is the first public report from the SemiAnalysis Teardown Engineering & Evaluation Lab, or STEEL for short. The lab is aggressively scaling up and out and we’re excited to announce it publicly. This is a bit of inconvenient timing for TechInsights as they are private equity owned and currently being sold while having enjoyed virtually no credible competition for decades. This has led to TechInsights underinvesting in CAPEX. SemiAnalysis exceeds TechInsights in revenue despite no venture or private equity ownership and being founded only 6 years ago. Because we have no external investors and are founder led, we move faster, build faster, and we can release client chip teardowns for free regularly, while focusing on datacenter for our major clients. Here’s the first public image from our lab, the HiSilicon Kirin 9030 Pro SoC: This report will detail our teardown of the Kirin 9030 and our findings on SMIC’s N+3 process, the most advanced in China. For comparison, we’ll show our teardown of the MediaTek Helio G99, made on TSMC N6. Through this comparison, we can look at the effect of export controls – SMIC N+3 and TSMC N6 are comparable nodes, but one is heavily export-controlled, the other free to use the West’s most advanced equipment. Here we see both China’s progress and constraints. SMIC N+3 reaches TSMC N6-class logic density, but it requires far more aggressive DUV multi-patterning, so it does not match N6 on process maturity or cost. The Kirin 9030 Pro performs similarly to three-year-old Android flagships, and trails far behind the current flagship SoCs from Apple, Qualcomm, MediaTek, and Samsung. The efficiency gap is even wider. Export controls have not stopped Huawei and SMIC from shipping advanced silicon, but they have forced a different path. Without EUV, SMIC is leaning harder on DUV multi-patterning, DTCO, and increasingly complex integration. The roadmap continues forward through tighter design rules and backside power, but each step adds cost and process risk. Huawei’s τ scaling and LogicFolding show another path: stacking active logic and recovering density through advanced packaging and system-technology co-optimization (STCO). To understand the Kirin 9030, we must first understand Huawei’s SoC history. HiSilicon is Huawei’s chip design arm, responsible for the Kirin smartphone SoCs, Kunpeng server CPUs, Ascend AI accelerators, and switch/router networking silicon. Before export controls, Huawei was TSMC’s largest customer – the only customer on TSMC’s first EUV node, N7+, and among the first on N5, alongside Apple. That ended in late 2020. Huawei switched to Qualcomm SoCs in its flagship smartphones, though export controls limited them to 4G-only variants. In late 2023, Huawei returned to in-house silicon with the Kirin 9000s, a successor to the Kirin 9000, fabricated on SMIC N+2 instead of TSMC N5. In the following years, they released the Kirin 9010 and 9020 on the same N+2 process. These chips used Huawei’s in-house TaiShan CPU cores and Maleoon GPU. We have not torn down a Kirin 9020 ourselves, so the predecessor die shot is from Kurnal. The die shots show how Huawei spent its silicon budget: which functional blocks are where, and how their areas compare to the predecessor. First, a quick guide to the major blocks on the die. The total die area is nearly identical, but the 9030 uses that area more aggressively. A denser process lets Huawei fit an extra middle CPU core, more GPU and NPU cores, and larger caches into the same footprint. In contrast, the Helio G99 is a much smaller, low-cost SoC, built for budget smartphones rather than a flagship device. While the Kirin 9030 is ~140 mm², the G99 is only ~29 mm², roughly one-fifth the area. The underlying TSMC process technology, however, is directly comparable as a baseline for analyzing SMIC’s. The Kirin 9030 is an evolutionary refresh, not a clean-sheet design. Its CPU, GPU and NPU cores carry over the 9020’s families, and the gains come from three levers: the SMIC N+2-to-N+3 process step, DTCO and floorplan work, and incremental microarchitecture. Area is where the first two show up, and the 9030 scales well here. Performance and efficiency are the harder test. Huawei’s design holds up better than its node would suggest, but the chip still trails, both because N+3 sits behind the leading-edge nodes and because its cores, while competent, remain a few generations behind the newest designs. The new prime core is an incremental update. The main changes are a 10% frequency increase from 2.5 GHz to 2.75 GHz and a doubling in the L2 cache from 1 MiB to 2 MiB. Despite the increased cache, the core size decreased by 7.6%. Excluding the private L2 cache, the core size decreased by 21%. This is a large reduction for an incremental node. Compared with the TaiShan New V120 core in the Kirin 9020, the Kirin 9030’s middle core is almost unchanged architecturally, yet each core shrinks by ~22%. Most of that comes from the move from N+2 to N+3, with layout likely accounting for the rest. Visually, the most noticeable change is the increase from 3 middle cores to 4. There is also a 20% increase in the shared L3 cache of the big cluster. This helps to improve multi-core performance without sacrificing much in terms of area. Even with each core shrinking, the big CPU cluster’s total area is essentially unchanged. The per-core savings went back into an additional middle core and larger caches. The tiny cores shrank less than the prime core (excluding its L2 cache) and less than the middle cores. This is likely because fixed overhead is a larger share on a small core. We cannot resolve any architectural changes from the die shot alone, but the per-clock and efficiency gains shown below point to more than pure process and layout scaling. The area reduction was offset by a doubling of the shared L2 cache from 2 MiB to 4 MiB, leaving the total tiny CPU cluster area slightly larger. Area is the easiest improvement to see from a die shot, but it is only one part of PPA (power, performance, area). For modern logic, power and performance matter just as much, and often more. Since Dennard scaling broke down in the mid-2000s, voltage and frequency have not scaled in step with transistor dimensions, so each node has had to fight harder for gains in performance and efficiency. The starkest comparison is not Kirin 9020 versus Kirin 9030 Pro. Apple’s efficiency cores run circles around Huawei’s prime core. Apple’s low-power core delivers 20% higher integer performance while drawing only 1 W, compared with 4.5 W for Huawei’s prime core. N+3 matches TSMC N6, but N6 is several generations old. Apple and Qualcomm build on N4 and N3P, which are denser and sit on a better voltage-frequency curve, giving them a larger transistor budget and more performance per watt. The 9030’s own cores did improve. The middle and tiny cores gained 17% and 14% in per-clock integer performance over the 9020, with floating-point flat on the middle core and up 11% on the tiny. The tiny core improves cleanly, with performance rising while power falls and efficiency increases by 45% in integer and 24% in floating point. The middle core is mixed: integer performance rises but power rises faster, cutting integer efficiency by 7%, while lower power lifts floating-point efficiency 16%. Per-clock gains at the same or lower frequency are microarchitectural, so the cores are tuned, not just shrunk. Both also failed to hold their rated maximum frequencies, pointing to thermal, power, or stability limits. Per clock, the middle core sits around Arm Cortex-A720 and the tiny core near the Cortex-A520; absolute performance trails because Huawei clocks them much lower. The prime core is roughly Cortex-X2 class per clock, a 2021 design. Apple’s 2020 M1 Firestorm core is still 35% higher per clock and 57% faster in absolute integer performance at a similar 4.5 W. The current leading edge is further ahead again: the Apple M5 P-core is 60% higher per clock and 2.7× faster, the Arm C1 Ultra 45% higher and 2× faster. Matching older high-end cores per clock is a genuine design achievement. What Huawei cannot match is the voltage-frequency curve and transistor budget of leading-edge nodes, which let Apple, Qualcomm and others spend more transistors in the same area on wider cores, larger caches and deeper buffers while running at lower voltage. Huawei’s LogicFolding roadmap is one answer, stacking active logic to recover density and shorten signal paths. We return to it later. The GPU compute units (CUs) changed more visibly than the CPU cores, moving to a more rectangular layout for both the arithmetic logic unit (ALU) clusters and the CU overall. Even with ray-tracing support added, a CU shrank ~28%. However, that shrink is offset by the increase from 4 to 6 CUs and the area outside the CUs grew 33%. Overall, the GPU cluster is larger by ~10%. The GPU is where Huawei makes its biggest gains. The Maleoon 935 is not competitive with current flagships, but it is a large step up from the 920 and reaches older-flagship territory. In 3DMark it is 70% faster in Wild Life Extreme (WLE) and 79% faster in Steel Nomad Light (SNL) than the 920; with 11% higher clocks and 50% more CUs, the ~67% theoretical uplift roughly matches WLE and is beaten by SNL. It edges ahead of the Snapdragon 8+ Gen 1 in WLE and SNL, and the Dimensity 9200 and Apple A16 in WLE, but stays far behind newer parts: the Snapdragon 8 Elite Gen 5 and Dimensity 9500 are ~2.4–2.6× faster in WLE and ~3.2× faster in SNL. The Maleoon 935 is Huawei’s first GPU with hardware-accelerated ray tracing; there it lands slightly ahead of the Exynos 2200, and on par with the Apple A16, with current flagships up to 3.7× faster. The Neural Processing Unit (NPU) saw the largest structural changes of any block, moving from a Lite and a Tiny core in the Kirin 9020 to a Lite and two Tiny cores in the Kirin 9030. Both core types also show significant layout changes. This is a reversal in Huawei’s NPU design. The Kirin 9000 5G, its last flagship chip on TSMC N5, used two Lite and one Tiny core. The series of SoCs on SMIC N+2 moved to one Lite and one Tiny core, likely for area savings. With the Kirin 9030, Huawei has shifted back toward a larger multi-core NPU cluster, but with the additional area going to a Tiny core rather than a Lite core. We’re diving deep into the most advanced datacenter and AI hardware hitting the market. To learn more about what’s in the pipeline or to commission a custom teardown, contact sales@semianalysis.com. Interested in joining us on this ride and think you can be a difference maker? Check out our Careers page. Before diving into the process stack, the package and memory are worth separating from the SoC itself. The Pro variant of the Kirin 9030 carries 12 GB of Samsung DRAM, with two stacks of four dies each. The dies were identified as the K4L2E165YD, a 12 Gb LPDDR5X-9600 device fabricated on Samsung’s 1a node, the fourth generation of its 10 nm-class DRAM after 1x, 1y and 1z. 1a has shipped in volume since 2022, so this is current memory rather than older-node inventory. The 16 GB Pro Max variants we obtained were found with both CXMT and Samsung packages. The CXMT package is marked CXDD7JEDM, with two stacks of four dies, packaged in week 45 of 2025. The inferred die dimensions from X-ray computed tomography (CT) are consistent with a known density of ~0.3 Gib/mm² for the CXMT G4 process, roughly equivalent to other manufacturers’ 1z processes. The Kirin 9030 uses a typical integrated package-on-package (iPoP) stack: multiple DRAM dies in a memory package sit above an organic redistribution layer (RDL) interposer, which sits above the SoC and package substrate. The full package is then mounted to the printed circuit board (PCB) through ball-grid array (BGA) solder bumps. The memory package substrate is a thin bismaleimide-triazine (BT) laminate carrying the LPDDR5X stack. The organic RDL interposer over the SoC routes the PoP signals around the die and carries possible dummy thermal copper pillars. The package substrate, a thicker Ajinomoto Build-up Film (ABF) build-up over a BT core, fans the flip-chip bumps out to BGA pitch and embeds the power planes. The whole stack is organic. The only silicon is the SoC and the LPDDR5X dies; there is no silicon interposer. Keeping it all-organic brings the package’s coefficient of thermal expansion (CTE) close to the PCB’s, reducing board-level warpage, and avoids the cost of a silicon interposer the SoC’s bandwidth does not need. In an iPoP stack, the memory package connects to the organic RDL interposer through an array of solder bumps. Underfill fills the gap around those bumps, adding stiffness and protecting the joints from mechanical stress. The Pro and Pro Max variants differ here, which we cover behind the paywall. The die shot and architecture tell us how Huawei allocated its silicon budget. The process tells us what SMIC can manufacture. We use the Helio G99 as the process reference for TSMC N6. Both SMIC N+3 and TSMC N6 are evolutions of previous 7 nm-class nodes. We used targeted TEM cross-sections through logic and memory regions, imaged in both fin-cut and gate-cut directions. Each cross-section caption gives its horizontal field width (HFW), the real width of the imaged area. We start at the transistor fins, then move up through standard cells, local interconnect, and SRAM. SMIC has not overtaken Intel or TSMC. It uses aggressive DUV scaling and DTCO to reach N6-class density, but that density doesn’t translate into comparable performance and efficiency, for two reasons: the node gap to leading-edge nodes, and Huawei’s core designs. Fin Profile One of the most important knobs in a FinFET process is the fin profile: the shape of an individual fin and the channel where current passes from source to drain. The ideal fin is tall, narrow, and nearly vertical. A taller fin increases effective channel width, while a narrower fin improves electrostatic control by thinning the body the gate must control. Push either too far, and the process pays for it: weaker drive current, fragile fins, taper, footing and line-edge variation that hit yield and device variability. The Intel 22 nm, 14 nm, and 10 nm fin cross-sections show how FinFET nodes have improved over time. 22 nm fins were a first-generation structure, relatively short, wide and strongly tapered. The shape limits current density and reduces gate control uniformity across the height of the fin. At 14 nm and 10 nm, Intel pushed the fins taller and narrower while also making the sidewalls more vertical. Rather than shrinking the device, these changes increase the effective channel width per fin and improve electrostatic control. The trade-off is that taller fins at tighter pitches are much more difficult to manufacture. Now, let’s compare the Helio G99 on TSMC N6 with the Kirin 9030 on SMIC N+3. Both processes are in the same class, with fin pitch of 30-32 nm on N+3 and 34 nm in our N6 cross-section. The pitch for N6 is especially interesting as N7’s HD library is generally listed with a 33 nm fin pitch, and N6 did not shrink pitches directly. Its density gains came from DTCO instead of tighter pitches. The 34 nm pitch was stable across our sampled region and serves more as a comparison against the SMIC N+3 we have not investigated further. Pinning down N+3’s fin patterning scheme takes more than one core unit. The CPU cores show a dense ~32 nm pitch, with the pitch between N-P fin pairs alternating between 78 and 88 nm. Logic alone may be consistent with dual-pitch mandrels of 120 and 110 nm, but this is a complex and unusual approach. Combining the pitch from the the 8T SRAM, which has more complex repeat unit, with the CPU core sequence allows us to reverse engineer the patterning steps with more confidence. As both the logic and SRAM should share the same base grid, a single CD mandrel lithography pattern with 128 nm pitch undergoing SAQP produces a die-wide ~32 nm grid (128 nm/4), which supports the pitch sequencing seen in both logic and SRAM cells. In the sampled cross-sections, N+3 shows a taller, narrower, higher-aspect-ratio fin than N6. The measured fin aspect ratio is ~9.5:1 on N+3 versus 7.8:1 on N6. N+3 also shows less top rounding, with an estimated radius of ~2 nm, compared with 2.8 nm on N6. Even though the fin widths differ, the ratio of top rounding to fin width tells the same story, with N+3 at 0.37 and N6 at 0.44. In a geometric sense, lower is better; a perfectly rectangular fin would have no top-rounding penalty. These are single-digit-nanometer features measured from a handful of cuts, so treat the absolute numbers as approximate. The important result is the relative gap: N+3’s fins are consistently taller, narrower and less rounded than N6’s. We’re diving deep into the most advanced datacenter and AI hardware hitting the market. To learn more about what’s in the pipeline or to commission a custom teardown, contact sales@semianalysis.com. Interested in joining us on this ride and think you can be a difference maker? Check out our Careers page. Standard Cell A standard cell is the basic building block of chip layout: a fixed-height row pairing one NMOS and one PMOS transistor that share a gate, tiled in a grid to build logic blocks. The key dimensions are contacted gate pitch (CGP), cell height (CH), fin count, and the lower-metal routing grid. To measure density, we use the Bohr metric: a weighted average of NAND2 gate area (60%) and scan flip-flop area (40%). This represents a realistic mix of combinational and sequential logic. This metric has its limitations, especially for complex cell layouts like TSMC’s FinFLEX, which alternates cells with different fin counts. Even so, it is the best metric for a pure process-level comparison. Another important measurement is the fin pitch; it refers to the distance between two fins of the same transistor. In a FinFET process, multiple fins are used in each transistor to increase the drive current and thus performance. TSMC N6 ships both a high-density (HD) library with 2 PMOS and 2 NMOS fins per cell, and a high-performance (HP) library with 3 of each. More fins under the shared gate mean more effective channel width. HP cells switch harder at the cost of area. Designers mix the two on a die, primarily spending HP cells on timing-critical paths, and matching their PPA targets. In the Cortex-A55 core of the Helio G99, we found a cell height of 240 nm for the HD cell. MediaTek has used HD cells in the G99 to minimize die size and thus cost. As an SoC for budget smartphones at ~$100, this is essential. By contrast, we found only one library in the Kirin 9030, with 2 NMOS and 2 PMOS fins. This suggests a narrower library strategy than TSMC N6, where both HD and HP libraries are widely used. This likely reflects the smaller customer base and the more constrained domestic design and electronic design automation (EDA) ecosystem. In all three CPU cores of the Kirin 9030, we found cell heights of 228 nm, 5% smaller than on N6. This is also a reduction of 9.5% over SMIC N+2’s cell height of 252 nm. SMIC N+3 and TSMC N6’s HD library both feature a CGP of 57 nm. For SMIC, this is a 9.5% shrink over N+2. In the past, CGP and cell height alone may have been enough to compare transistor density. Now, however, we must consider scaling boosters and DTCO as well. SMIC’s density gain does not come from EUV. It comes from using every available DTCO booster aggressively. First is fin depopulation: reducing the number of NMOS and PMOS fins in each cell. The first FinFET nodes started with 3 or 4 fins for each transistor. SMIC N+3 and TSMC N6 HD both use only 2 fins per transistor, trading drive strength for density. Next is contact over active gate (COAG). By landing the gate contact directly over the active gate, instead of out over the isolation region, the cell height drops. N+3 integrates COAG while N6 does not. Our N+3 gate-cut cross-sections indicate COAG, with the gate contact sitting over the active region, while N6 shows an off-gate contact. Last is single diffusion break (SDB). Diffusion breaks are inserted between cells in the same row to provide electrical isolation, but they also introduce local layout effects (LLE), layout-dependent shifts in electrical characteristics. In the past, a double diffusion break was used, consuming the space of two CGPs. SMIC N+3 and TSMC N6 instead use SDB, saving area but increasing LLE sensitivity. This must be controlled at the process level and accurately modeled in the process design kit (PDK) so that EDA tools can account for it. Overall, SMIC N+3 has a transistor density of 113.4 MTr/mm², slightly above TSMC N6 at 107.7 MTr/mm². Even without EUV, SMIC has achieved density beyond TSMC’s mature N6 node which utilizes EUV. Metal Stack The smallest critical dimension in the teardown is M0; SMIC N+3 uses a 32.5 nm local metal pitch. That is smaller than the 36 nm M0 pitch on Intel 18A in Panther Lake. However, this does not mean that SMIC has a better process than Intel 18A or TSMC N3P. M0 is a local intra-cell routing layer. Its usefulness depends on the full interconnect stack: M1 and M2 pitch, track count, via and line resistance, design rules, mask count, overlay control, and routing flexibility. The 32.5 nm M0 is consistent with self-aligned quadruple patterning (SAQP), whose four-population line-width loading we read coarsely as alternating widths of 21.5 to 24 nm; M1 and M2, at 38 and 40 nm, are consistent with self-aligned double patterning (SADP), a single A/B split. On TSMC N6, M0, M2, and M3 sit at a relaxed ~40 nm and are consistent with SADP-class double patterning, with no need for quadruple patterning. That said, we measure M2 for example at ~43 nm, likely inflated by sparse routing. We do not assign any specific layer to EUV from our cross-sections; the distinction we can draw is double versus quadruple patterning, not lithography wavelength. Transistor-level density in the front-end-of-line (FEOL) sets an upper bound, but the design is ultimately limited by what the interconnect stack can route. The lowest metals are the most important for standard-cell density, but the semi-global and global layers determine how usable that density is at the block and chip level. Two axes are commonly used for chip cross-sections: the fin-cut and the gate-cut. The micrograph above is a fin-cut and shows metals 0 through 3. This axis lets us see the even-numbered metals, with M0 right above the fins. There are two kinds of M0 lines. The first are the power rails; these are wide wires for the VDD and VSS running horizontally at the top and bottom edges of each standard cell. The wide wires measure 55 nm across, more than double the other M0 lines. Their width minimizes resistance and reduces IR drop. The second kind are intra-cell wires, short segments within the cell that connect terminals to M1. These have alternating widths between 21.5 and 24 nm. The M0 pitch is 32.5 nm, a 19% reduction versus N+2 and N6. At this pitch, DUV patterning requires more aggressive multi-patterning, increasing mask count, overlay sensitivity, process complexity and cost. M0 is below what a single DUV-defined spacer (SADP) can resolve, so SMIC cascades a second spacer step (SAQP). The cross-section reflects the cost: the M0 trenches are visibly more re-entrant (narrower at the bottom than the top) than M1 or M2 on the same chip and carry a bright barrier-rich foot where the trench meets the etch-stop layer. That shape is partly the intended damascene profile, as a slightly narrow bottom helps void-free copper fill, but its magnitude at M0 is driven by the tight pitch and the higher trench aspect ratio. Intel 18A supports an M0 pitch of 32 nm, although Panther Lake has only shipped with a looser 36 nm pitch. This is due to Intel’s heavy usage of HP libraries. Among leading-edge nodes, 18A has the loosest M0 pitches due to PowerVia. With power routing moving to the backside, congestion is reduced, and the entire front-side metal stack can be used for signal routing. M2 is the first true inter-cell routing layer. It runs horizontally like M0 but spans across multiple cells to carry block-level signals. The M2 pitch sets the cell’s track height – the number of M2 tracks that fit between the VDD and VSS rails, defining what the library calls a 6-track or 7.5-track cell. This layer is the most important, limiting the routing of entire blocks. SMIC N+3 features a 5.7-track cell. The M2 pitch is 40 nm, a 5% decrease over N+2 and the same as N6. This shrink keeps the pitch at the edge of what is possible with double patterning. Future nodes will need to increase the number of masks for M2 as reducing the number of tracks is much harder due to the limitations in routing. The micrograph above is in the perpendicular direction, the gate-cut, and shows metals 0 through 4. This allows us to see and measure the odd-numbered vertical metal layers. The M1 pitch is 38 nm, 9.5% less than N+2 and 33% less than N6. The M1-to-gate ratio matters because it sets local routing flexibility. N+2 and N+3 use a 3:2 ratio, while N6 uses a 1:1 ratio, explaining the huge differences in M1 pitch. The more M1 lines there are compared with the gates, the more flexibility there is for power and signal crossing within the cell. Routing flexibility enables more complex and better cells. Clean fractional ratios are also preferred as a grid is periodic and improves layouts. The 3:2 ratio gives SMIC more local routing flexibility than a strict 1:1 grid, but it also complicates layout and patterning. This is a DTCO choice, with SMIC increasing process complexity to recover density and routability without EUV. This 3:2 ratio is not very popular in the leading-edge nodes. TSMC has only used it on N7+, the N5 family, and the short-lived N3(B). They have switched back to a 1:1 ratio for N3E. Intel has only used it on the 10 nm/Intel 7 family, with Intel 4, 3 and 18A all using a 1:1 ratio. Samsung is the only one still using a 3:2 ratio at the leading edge, using it in the SF4 and SF3 families. It remains to be seen if SMIC will remain at a 3:2 ratio or move to a 1:1 ratio with its future nodes. The industry is still actively exploring these local-routing ratios. At VLSI 2026, imec will be presenting work on even higher ratios, including a 2:1 scheme that can reduce area by up to 14%. We will be covering the conference in a future newsletter article. Subscribe We’re diving deep into the most advanced datacenter and AI hardware hitting the market. To learn more about what’s in the pipeline or to commission a custom teardown, contact sales@semianalysis.com. Interested in joining us on this ride and think you can be a difference maker? Check out our Careers page. The final local interconnect layer for N+3 is M3, with a pitch of 44 nm. The M3 pitch is the same as on N+2 and 10% larger than on N6. The semi-global layers carry the majority of block-level signal routing. They have a coarser pitch than the lower local layers. On leading-edge nodes, they are designed to sit at the limit of DUV single patterning. M4 through M11 pitches were found divided between 80–82 nm (M4–M6), 128 nm (M7–M10), and 148 nm (M11). Given limited sampling, it is possible these are divided further in dense routing areas. At the top are two giant metal layers, M12 and M13. These have kept the same pitches as N+2 at 1920 nm and 4600 nm respectively. While the lower layers’ pitches are generally fixed by the process and library, the upper layers vary much more in pitch and count, depending on the design. Even two smartphone SoCs on the same process can have wildly different metal stacks. The Helio G99 carries fewer routing layers, reaching coarse metal pitches of 850 nm by M9, while the larger and higher-performance Kirin 9030 keeps fine pitches until M11. SRAM At the leading edge, SRAM is much more difficult to scale than logic. TSMC’s latest nodes have seen little to no bitcell scaling, while logic still has more DTCO levers to pull. While looking for other logic libraries in the GPU compute units, we stumbled upon the SRAM. The most common type of SRAM has 6 transistors (6T), but this cell had 8 transistors (8T) instead. 8T SRAM adds two transistors to form a dedicated read port. Unlike a 6T cell, where reading disturbs the storage, the decoupled read port removes read-disturb, improving read stability and letting the cell be pushed harder for performance. At first glance, the cut looked like an unusual logic library, with each cell row having 3 fins of one polarity and 5 fins of another. The rows also alternated in orientation. Energy-dispersive X-ray spectroscopy (EDS) resolved our confusion. The cut had not landed on the GPU logic, but on the SRAM macro beside it. The unusual fin pattern was due to the SRAM library. We return to EDS in the process flow analysis behind the paywall. SRAM libraries are not like traditional logic libraries. Due to the unequal number of PMOS and NMOS transistors, they require specialized rules and layout libraries. They do not need the flexibility of logic libraries, so they are hyper-optimized for one purpose: dense, reliable memory. The SRAM cell we found is a 1:2:2-2:2 cell. This means there is 1 fin per pull-up (PU) PMOS transistor, and 2 fins per pull-down (PD) and pass-gate (PG) NMOS transistor. These 2 PU, 2 PD and 2 PG transistors would usually form a single 6T high-current cell (HCC). An 8T HCC adds a read-pull-down (RPD) and a read-pass-gate (RPG) NMOS transistor, each with two fins. We measured a cell height of 406 nm, which brings the bitcell size to 0.0463 µm². That is a theoretical peak density of 21.6 Mib/mm². We estimate that a 6T HCC would have a cell height of 292 nm and a size of 0.0337 µm². This is ~12% larger than a 6T HCC on Intel 3 and 4. We also estimate the 6T high-density cell (HDC) to have a cell height of 228 nm and a size of 0.0260 µm². This is coincidentally the same as the logic standard-cell height measured earlier. The estimate puts the cell near Samsung 7LPP/5LPP and slightly below TSMC N7/N6. That is a theoretical peak density of 38.5 Mib/mm². 6T HDC is arguably the most important cell as it is used for the largest caches in a chip, the L3 caches and system-level cache (SLC). Both the Kirin 9020 and 9030 have split the SLC into 4 banks to raise total SLC bandwidth. In the Kirin 9030, the SLC increased from 2 MiB to 3 MiB per bank. Correspondingly, the number of arrays within the bank also increased by 50%, from 16 to 24. Each array can store 128 KiB and forms an orderly pattern on the die shot. From the Kirin 9020 to the Kirin 9030, the area of a 128 KiB SLC array decreased from 0.0477 mm² to 0.0392 mm², an 18% shrink. The achieved density is 25.5 Mib/mm², 66% of the theoretical maximum. While the SLC was quite similar across both chips, the L3 has seen some major changes, particularly in terms of its layout. The total capacity also went up from 10 MiB to 12 MiB. Much like the SLC, the L3 is also split into 4 banks. In the Kirin 9020, an L3 bank consisted of 16× 128 KiB arrays and 16× 32 KiB arrays. However, an L3 bank in the Kirin 9030 instead consists of 48× 64 KiB arrays. In the Kirin 9020 L3, a 128 KiB array was 0.0513 mm² and a 32 KiB array was 0.0154 mm². The size of the 128 KiB array is different on the L3 and SLC as the assist circuitry for the two arrays differs depending on their purpose. In the Kirin 9030 L3, a 64 KiB array is 0.0210 mm². Although not a like-for-like comparison, normalized for capacity, it is 18% smaller than the 9020’s 128 KiB L3 array and 31% smaller than its 32 KiB L3 array. The achieved density is slightly lower than the SLC, at 23.8 Mib/mm², 62% of the theoretical maximum. Unlike the L3 and SLC, the prime cores’ private L2 cache uses a 2-bank design. As the prime cores’ L2 is latency-critical, it likely uses 6T HCC instead of 6T HDC. The 9020 has 16 arrays in each bank while the 9030 has 32. Each array has a capacity of 32 KiB. A 32 KiB array in the L2 shrank from 0.0171 mm² to 0.0142 mm², ~17% smaller. The density is 17.6 Mib/mm², ~59% of the theoretical maximum for 6T HCC. SRAM scaled well from N+2 to N+3, shrinking by ~19%, close to the theoretical logic shrink. The caveat is that N+2’s bitcells were unusually large, bigger than comparable 7 nm-class nodes, so part of the gain is catch-up rather than true scaling. With the insights from STEEL’s teardowns, we will be doing a deep dive into SRAM in a future newsletter article. Subscribe Everything above came out of a single STEEL teardown: die annotation, block-level area analysis and TEM cross-sections through logic and SRAM. We’re diving deep into the most advanced datacenter and AI hardware hitting the market. To learn more about what’s in the pipeline or to commission a custom teardown, contact sales@semianalysis.com. Future Roadmap The same cross-sections that pin down N+3 also show where SMIC can go next. Although N+3 is already close to the practical limits of DUV multi-patterning in several layers, SMIC still has a few scaling levers left. A theoretical N+4 would likely start with cell height. N+3 uses 5 M0 tracks between its power rails. Moving to 4 M0 tracks, as on SMIC N+2 and TSMC N6, could reduce cell height by roughly 15%. The routing grid is only one side of the shrink; the front end also must fit into the smaller cell. One possible FEOL lever is reducing the p-to-n isolation spacing from two diffusion grid units to one. Intel used this scaling booster on Intel 4, and TSMC did so on its N3 family. This path trades layout flexibility for density. Fewer M0 tracks reduce local routing resources, while tighter p-to-n spacing raises integration and design-rule difficulty. M2 is also constrained by the cell height shrink. For SMIC to maintain a ~5.7-track cell, M2 would need to move toward ~35 nm. That would move another layer into SAQP territory. SMIC could also reduce the CGP from 57 nm to 54 nm. Intel reached a similar CGP on Intel 10 nm/Intel 7 without EUV. The local interconnect is also tougher. If SMIC keeps the 3:2 M1-to-gate ratio, M1 would need to shrink to 36 nm and would likely require SAQP as well. If SMIC moves to a 1:1 ratio, M1 could relax to 54 nm, but it would give up routing flexibility. Under this theoretical path, we estimate that SMIC N+4 could reach a cell height of 198 nm and a CGP of 54 nm, implying a Bohr density of 137.8 MTr/mm², on par with TSMC N5 or Samsung SF4. However, the difficulty is cumulative. Each step is individually plausible, but together they make N+4 harder than the transition from N+2 to N+3. It will likely take longer, cost more, and carry less process margin. A theoretical N+5 would require a larger integration shift. One possible path is backside contacts (BSCon), moving power routing and source/drain contacts to the backside, which would reduce front-side routing pressure and enable another reduction in cell height. The front-side metal pitches could relax to reduce the process complexity. M0 would likely relax slightly to ~34 nm, and M2 and M4 pitches could relax further. CGP is unlikely to shrink much further. Even with EUV, 48 nm has been the practical limit for yield and process control. This approach would allow N+5’s cell height to fall to 170 nm and its CGP to 53 nm. This implies a Bohr density of 163.6 MTr/mm², on par with Intel 18A’s HP library. However, this would not make N+5 cost-competitive with the leading edge. It would reach a similar density through a much more expensive route. The integration difficulty rises sharply, with new process flows for backside alignment, wafer thinning, contact reveal, and backside metallization. Past this point, standard density and interconnect scaling become increasingly unattractive. That is where Huawei’s roadmap stops looking like a normal foundry roadmap and starts looking like a packaging roadmap. At ISCAS 2026, Huawei unveiled its tau (τ) scaling law, reframing process scaling in the time domain. τ is the time cost of data movement and processing: switching delays in transistors, RC signal propagation delays in circuits, compute, memory, and networking latency. Outside Huawei’s terminology, this is called system-technology co-optimization. This is Huawei’s answer to its lack of EUV lithography. Without EUV, planar density cannot keep pace with TSMC, Intel, or Samsung. If transistor density cannot shrink further, Huawei’s alternative is to shorten wires, reduce buffering, and stack logic vertically. “LogicFolding”, Huawei’s implementation of this new scaling idea, is, in practice, an aggressive 3D stacking approach. AMD V-Cache places SRAM above or below a CPU die. AMD’s MI350X places active interposer dies (AIDs) underneath accelerator and compute dies (XCDs), with the AIDs handling cache, IO interfaces, the network-on-chip (NoC) and embedded metal-insulator-metal (MIM) capacitors. With LogicFolding, parts of the same logic block are split across multiple active dies bonded face-to-face at ultra-fine pitch. This allows Huawei to shorten some critical paths and reduce buffer overhead, not merely add cache capacity or offload the IO and interconnect. Shortening wires is where the higher clocks come from. A large share of a modern core’s delay and energy budget goes into driving long interconnects and the repeater buffers along them. LogicFolding distributes a block’s critical-path gates across multiple stacked tiers bonded at a very fine pitch, so the bond interface behaves like an additional metal layer and the longest paths get shorter. That is how Huawei expects to recover frequency and efficiency it cannot get from the process alone. Huawei’s roadmap shows its intent. Prime core frequency is targeted to rise from 2.75 GHz in the Kirin 9030 to roughly 5 GHz by 2031, far beyond what planar scaling alone could deliver. Prime cores with 3.1 and 3.39 GHz clocks are being tested in its labs, although their power consumption is unknown. Beyond that, chips are in the design, simulation or pathfinding phase, meaning the frequencies are targets. However, the direction matters more: LogicFolding also helps with performance, not just density. The catch is that Huawei’s density claim is not directly comparable to foundry densities. A stacked design can report more transistors per package footprint by adding active layers, even if each patterned die remains well behind TSMC or Intel in front-end density. This is how Huawei can claim to reach foundry 14A-equivalent density by 2031. This is not a like-for-like foundry comparison, with Huawei using stacked logic and measuring density per package footprint. On a normalized Bohr-density basis, SMIC N+3 is ~114 MTr/mm², 38% less than Intel 18A’s HD library. Huawei’s 3D roadmap closes the gap by stacking active logic, reaching 215 MTr/mm² by 2030. In 2031, the roadmap density jumps to 295 MTr/mm², implying either a third active layer, partial EUV insertion or aggressive planar DUV scaling. Huawei’s methodology makes other foundries look much denser as well. Applying it to AMD’s MI450X with an N2 top die on an N3P base die yields a theoretical density of 460.2 MTr/mm² in 2026, compared with Huawei’s 295 MTr/mm² in 2031. This Kirin 9030 does not use LogicFolding, remaining in a conventional mobile SoC package. Instead, it forms the baseline for how far Huawei and SMIC can push planar scaling. Future teardowns of Kirin and Ascend chips will show both planar logic density and Huawei’s hybrid bonding solutions. Export controls changed China’s optimization problem rather than ending it. EUV restrictions raised the cost and complexity of leading-edge manufacturing without freezing it. SMIC reaches N6-class logic density through DUV immersion, SAQP and DTCO, while Huawei shifts more of the burden onto architecture, packaging and system-level integration. Future nodes will be tougher. N+3 still had room to tighten local metals and reduce cell height and CGP. Further scaling without EUV leaves fewer levers. More aggressive multi-patterning adds masks and overlay error. SMIC can keep pushing DUV, but each step will get more expensive and less forgiving. The design side is just as critical. Huawei had domestic EDA tools and flows before the Kirin 9030, with the Kirin 9000s, 9010 and 9020 making that clear. Huawei was able to ship multiple consumer SoCs on SMIC N+2 and N+3 while cut off from the Western EDA stack. US export controls restricted EDA tools for advanced chips in 2022 but did not target tools for more mature chips. In 2025, the US government briefly placed much broader restrictions on EDA software from Synopsys, Cadence, and others, before lifting them less than two months later as part of a trade deal tied to rare earths. Huawei has been unable to access those tools because it remains on a US trade blacklist. That forced Huawei, SMIC and Chinese academic institutions to build their own tools and flows. Researchers at Peking University recently announced a prototype EDA tool for Huawei’s LogicFolding architecture, which requires a new flow to handle the multilayer layout and floorplan. This is not the same as replacing the full Synopsys or Cadence stack, but it shows where domestic EDA is headed: toward tighter co-optimization between architecture, process and packaging. These advances are also diffusing into the Chinese ecosystem. SMIC is licensing its N+2 and N+3 processes to HLMC/Hua Hong at the government’s direction rather than by choice. If the same process learning feeds into Ascend accelerators for AI training and inference, the choke point shifts from one named fab to an ecosystem. Alibaba’s T-Head silicon arm and Cambricon, a Chinese AI chip designer that is expected to supply ByteDance, could also be major beneficiaries. Sanctions aimed at SMIC alone become less effective once the manufacturing knowledge has spread to other fabs and design houses. China is not closing the gap with Intel, Samsung and TSMC. The teardown shows the opposite in several places: no EUV, no backside power, higher process complexity, and visible trade-offs. But China is still advancing. If domestic chips become good enough for phones, inference, networking and security-sensitive workloads, they can matter strategically without matching TSMC at the leading edge. Behind the paywall, we show what else STEEL can do, with material and process flow analysis of SMIC N+3, and analysis of the Kirin 9030 package. We’re diving deep into the most advanced datacenter and AI hardware hitting the market. To learn more about what’s in the pipeline, access the full Kirin 9030 and SMIC N+3 analysis or to commission a custom teardown, contact sales@semianalysis.com.
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