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Apple working on M7 Ultra Mac Studio for 2028 with potential major upgrade: report
Later this year, Apple will be debuting an updated version of the Mac Studio with M5 Max and M5 Ultra...
New hollow-core fiber test pushes internet speeds to 1.2Tb/s
Chinese researchers achieved a new milestone in fiber-optic technology, achieving ultra-fast data transmission over long distances without signal repeaters.
Galaxy Z Fold 8 Release Date: New Details Before Samsung Launch
Samsung's Galaxy Z Fold 8 Ultra launches at Unpacked London on July 22. Here's what we know on specs, colors, storage options and release date ahead of Unpacked.
What Apple Just Confirmed About the iPhone 18 Pro and Ultra
Apple has confirmed the foldable iPhone Ultra and iPhone 18 Pro for fall 2026. Explore the new A20 Pro chip, variable aperture cameras, and premium designs.
So many colorful Samsung Galaxy Watch 9 and Galaxy Watch Ultra 2 bands leaked ahead of launch
Anyone opting for the new Galaxy Watch9 or the redesigned Galaxy Watch Ultra 2 after July 22 will be spoiled for choice. Lots and lots of watch bands in different styles and colors will be available from Samsung at launch, as roughly 60 images leaked in advance shows.
Why the Samsung Galaxy Z Fold 8 Ultra is Breaking the Internet
Discover the leaked specs and design details of the upcoming Samsung Galaxy Z Fold 8 and Z Fold 8 Ultra ahead of their July 26 unveiling.
We've Got Our First Look at Every Galaxy Watch 9 Band Before Unpacked
Samsung is preparing to announce its new smartwatch next month, the Galaxy Watch 9. Which we are also expecting to come with the Galaxy Watch Ultra 2
3 flagship Android phones are cheaper now than they were on day one of Prime Day, but not for long
Prime Day is nearly over, but these three flagship Android phone deals have actually improved since the sale started.
MacBook Ultra and new MacBook Pro both launching this fall, per rumors
Apple’s high-end MacBook plans are coming into focus after recent Bloomberg reports, including MacBook Ultra and a new M6 MacBook Pro.
Apple's OLED 'MacBook Ultra' Will Stick With M5 Pro and M5 Max Chips
Apple's upcoming high-end MacBook model featuring an OLED touchscreen display will use the company's current M5 Pro and M5 Max chips, according to Bloomberg's Mark Gurman. The new, top-of-the-line device will launch "between late this year and early next year," Gurman said, adopting the existing high-end Apple silicon chips rather than next-generation M6 versions.
New iPhone Ultra report has new pricing and release timing info
Apple’s highly anticipated foldable iPhone is launching this fall, but a new report today claims you might have to wait...
Apple orders 9x fewer display panels for the foldable iPhone Ultra than for the iPhone 18 Pro
Reportedly, Cupertino orders "only" 10 million panels for its first-ever foldable phone.
TST Images: Aces defeat the Wings, 99-84, at Michelob ULTRA Arena
LAS VEGAS, Nev.
M5 Ultra Mac Studio Could Launch in 2026 With Up to 768GB of RAM
Despite price increases across the Mac line, Apple is still planning to release a new Mac Studio as soon as this year, reports Bloomberg. Apple plans to introduce a new M5 Ultra chip as the final option in the M5 family before it transitions to the M6, M7, M7 Pro, and M7 Max. The M5 Ultra will come in a new version of the Mac Studio, which hasn't been updated since March 2025.
Major blow for MacBook Ultra: Apple said to cancel M6 Pro and M6 Max
The Apple MacBook Ultra will either be released with the older Apple M5 Max, or its launch will be significantly delayed. This is because Apple is said to have halted development of the Apple M6 Pro and M6 Max in order to focus on the M7 series instead, which is expected to offer significantly stronger AI performance.
Galaxy Z Fold 8 release date leaks, hands-on impressions make ‘Ultra’ seem pointless
Continued Galaxy Z Fold 8 leaks are revealing more and more about Samsung’s upcoming foldable series, this time including some...
New Galaxy S23 software update makes it more secure
Samsung has started rolling out the June 2026 security patch to the Galaxy S23, Galaxy S23+, and Galaxy S23 Ultra.
iPhone Ultra 2 already given go-ahead, iPhone Air 3 not, says leaker
We may still be waiting for the launch of the iPhone Ultra, but a leaker with a decent track record...
iPhone Ultra 2 Gets Green Light for Development, Says Leaker
Apple's second-generation foldable iPhone has officially been given the go-ahead for development, a prominent Chinese leaker claimed today. In a post on Weibo, the account known as Digital Chat Station said that the "iPhone Ultra 2 project" has been formally approved, and that the second book-style device will likely use the same display as the first-generation model expected later this year.
Framework Laptop 13 Pro Intel mainboard now starts at $449 with optional LPCAMM2 memory from $439
Framework is now selling Intel Core Ultra Series 3 mainboard kits for the Framework Laptop 13 Pro with optional LPCAMM2 memory bundles.
Here's when Apple is starting mass production of the iPhone Ultra
Everything seems to be back on schedule. Recently there's been some controversy about the iPhone Ultra's release window, with a report claiming it was...
Galaxy Z Fold 8 Release Date: Samsung Devices Get New Confirmation
Samsung's Galaxy Z Fold 8 Ultra, Z Flip 8 and Watch 9 series have been cleared for U.S. launch, confirming the July Unpacked release date is on track.
Overwatch Fans Revolt Over New Skins That Cost Too Damn Much
The new ‘Ultra’ skins include visual and audio effects, but is that enough?
Galaxy Z Fold 8 Ultra picks up a display upgrade to really show what Samsung can do
Samsung is introducing a display upgrade for the Galaxy Z Fold 8 Ultra to really sell that 'Ultra' moniker to you.
Foldable iPhone 'Ultra' Set for Production in July Despite Hinge Issues
Apple's rumored foldable iPhone "Ultra" is expected to begin mass production at the end of July, according to a new report by The Elec. Although some recent reports suggested the book-style device could be delayed due to hinge-related issues, the Korean outlet's sources indicate that Apple is still targeting a September launch as planned.
Galaxy Watch Ultra 2 leaks from every angle, and looks pretty familiar [Gallery]
Following a Galaxy Watch 9 leak yesterday, new renders of the Galaxy Watch Ultra 2 have hit the web revealing...
iPhone Ultra 3D-printed hinge problems reportedly solved
Talk of a delayed launch for the upcoming iPhone Ultra now seems to have faded away, with all recent reports...
Pulsenmore Announces Strategic Partnership with Ouma Health to Expand Access to Remote Prenatal Care Across the United States
/PRNewswire/ -- Pulsenmore Ltd. (NASDAQ: PLSM) (TASE: PLSM), a pioneer in home ultrasound technology, today announced a strategic partnership with Ouma Health,...
Samsung Galaxy Watch Ultra 2 redesign leaked in high quality official press renders
One of the most well-known leakers came out of his retirement just to show us the partially adapted design of the Galaxy Watch Ultra successor in form of high-quality official render images. The ultimate Samsung smartwatch definitely adopts elements of the Galaxy Watch Classic8, some specs have also been confirmed.
New leak brings clearest look at Galaxy Watch Ultra 2’s design
The Galaxy Watch Ultra 2, which is expected to launch in July 2026, has been leaked. Clear images offer us a clear look at its design.
Galaxy Z Fold 8 Ultra gets a couple of unique colors as more details leak
It will be interesting to see what Samsung plans to offer to differentiate the Galaxy Z Fold 8 and Galaxy...
Buying an iPhone Ultra could be an expensive experiment
If you are planning to buy an iPhone Ultra to find out how useful it is in practice, with the...
Does the War on ‘Ultra-Processed Foods’ Make Any Sense?
The latest dietary evil is an old story in a new package.
Listening for quantum oscillations in the Kondo insulator YbB12
Magnetic quantum oscillations have been unexpectedly observed in insulators, where freely moving charge carriers are not expected to exist. A joint study by researchers from Tokyo University of Science, The University of Tokyo, and Kobe University investigated this puzzling behavior in the Kondo insulator YbB12 using ultrasound. While no oscillations were detected in the insulating state, clear signals emerged after the material became metallic, offering new insight into unusual quantum behavior in next-generation materials.
NASA’s Cold Atom Lab is creating one of the weirdest forms of matter in space
NASA’s upgraded Cold Atom Lab is turning the International Space Station into a frontier for quantum research, creating ultra-cold matter that behaves in astonishing ways. The experiments could unlock new discoveries about the universe while paving the way for powerful future technologies in space and on Earth.
Apple Will Equip The Outer Panel Of The iPhone Ultra With Samsung’s Cutting-Edge, Natively 10-Bit M16 OLED, While Retaining The Older M14 OLED For The Inner Screen
Apple is adopting an atypical, two-pronged display strategy for its upcoming foldable, tentatively dubbed the iPhone Ultra.
New supply chain report claims the iPhone Ultra will be unveiled as scheduled
When it will actually be released is another matter. Last week, a report from Apple's supply chain indicated that the iPhone Ultra would be delayed. This...
iOS 27 will add inline replies & photo reactions to Android-iPhone RCS
iOS 27 will introduce the next big update to Android-iPhone messaging with support for inline replies and photo reactions.
Every Apple Watch Model Hits Its Lowest Price Ever for Prime Day
Prime Day deals are already in full swing today, despite the event not kicking off until tomorrow, June 23. Below we're tracking all-time low prices across the Apple Watch lineup, including Apple Watch Series 11 for $120 off, Apple Watch SE 3 for $50 off, and Apple Watch Ultra 3 for $150 off. Note: MacRumors is an affiliate partner with Amazon. When you click a link and make a purchase, we may receive a small payment, which helps us keep the site running.
Mobile health tops early RHTP funding trends
State rural health transformation programs aim to overcome high startup costs and allow rural providers to deliver complex care locally with remote ultrasound, RPM and other mobile health technologies, says one industry expert.
Wyze’s new smart scale can break down your body composition for less than $80
The BodyScan is $40 cheaper than Wyze’s Ultra model by ditching Wi-Fi and simplifying the display.
The Best Apple Watch Prime Day deals: Save from $199
Just after the unveiling of watchOS 27 with a suite of new features, and with the early Prime Day deals...
Apple's first Ultras are coming: 20 new products in 2026–2027 according to Bloomberg
Apple's new CEO John Ternus will begin his tenure in September with a wave of new products that will bring Apple fans many exciting new releases. Well-known Bloomberg analyst Mark Gurman has listed the most important new products coming our way after the summer break, including the first ones potentially bearing the “Ultra” moniker.
Galaxy Watch 9 and Ultra 2 leaks reveal more changes, no Classic after all [Gallery]
Ahead of Samsung’s July event, new leaks are revealing a few more details about Galaxy Watch 9 and Galaxy Watch...
Apple reveals why watchOS 27 will be limited to Apple Watch Ultra 2 and newer models
While watchOS 26 could still be installed on the Apple Watch Series 6, watchOS 27 doesn't even run on the Apple Watch Ultra. Apple explains the reasons behind this decision, and, unsurprisingly, AI is responsible for the shorter software support period.
Apple Explains Why watchOS 27 Drops Support for So Many Models
Apple today detailed why five Apple Watch models will miss out on watchOS 27 and the new Siri AI features that come with it. The Apple Watch Series 6, 7, 8, SE 2, and the original Apple Watch Ultra will not receive watchOS 27, and will only get basic security updates going forward. With the update, Apple is effectively dropping three years' worth of device support in a single software update, which is unprecedented for the product line.
AI lab Midjourney investing over $74M to launch whole-body ultrasound screening business
Radiologists, meanwhile, took to social media to criticize the endeavor, noting that the generative AI company lacks clinical evidence to back its marketing claims.
Asus releases new gaming laptop globally with 1,600 nit Mini LED display and 175 W GPU
Asus has finally released an ultra-premium gaming laptop globally. With up to 320 W of power under full load, the ROG Strix Scar 18 2026 also contains a 4K and 240 Hz Mini LED display that spans 18-inches with 1,600 nits peak brightness at its disposal.
Brewer Science to Acquire Semiconductor Chemical Business Line from Heraeus Epurio
Brewer Science, Inc., a global leader in advanced materials and processes for the fabrication of cutting-edge microdevices, today announced it has entered into an agreement to acquire the semiconductor chemicals business line of Heraeus Epurio, a recognized technology leader in ultrapure electronic chemicals used in semiconductor manufacturing. The transaction will include the Heraeus Epurio semiconductor chemicals production site in Dayton, Ohio, along with the associated sales and support pers
Leaked iPhone Ultra renders suggest Apple has been closely watching Samsung
Apple's rumored iPhone Ultra could debut in September with a wider design, slim build, and a price tag exceeding $2000.
Scientists Made a Car Paint So Black It Looks Like a Hole in Reality
Researchers with Singapore-based Nipsea have created a new “ultra-black coating” that absorbs an average of 99.9% of all visible light wavelengths.
June 2026 update is rolling out to the Galaxy S24 series
Samsung has started rolling out the June 2026 security update for the Galaxy S24, Galaxy S24+, and the Galaxy S24 Ultra in South Korea.
AI Startup Midjourney Pivots to Health With Ultrasound Machine
AI startup Midjourney Inc. announced its first hardware project at an event in San Francisco, outlining an unexpected move into the personal health and medical industries.
Gurman: Apple AirPods with built-in camera may arrive in late 2027
The AirPods are said to debut alongside the second-gen iPhone foldable. Back in May, a report claimed that Apple had entered the final stages of...
iPhone Air With Dual Lens Camera Coming in Spring 2027
Apple is working on a new iPhone Air that's expected to launch in spring 2027, reports Bloomberg. The updated iPhone Air could get an Ultra Wide lens in addition to the Wide lens to make it a better value for the money. An iPhone Air with two camera lenses has reached the advanced testing phase. The device has the same design as the current model with the exception of the extra lens.
iPhone Ultra final design shared by Apple’s nemesis
Despite the ongoing legal battle, leaker Jon Prosser has been active in sharing leaks and renders for upcoming iPhone models. His latest could very well be the final version of the iPhone Ultra.
Motorola Razr 70 Ultra/Razr Ultra 2026 in for review
It's mostly identical to its predecessor, but ups the milliamps to 5,000. We finally got our hands on the Motorola Razr 70 Ultra (aka Razr Ultra 2026 in...
The foldable iPhone Ultra just leaked in full in this new video, with iOS 27 code backing it up
Plus a long-overdue feature that may cost you more to unlock.
Hugh Jackman almost 'pulled the plug' on ultra-violent 'Robin Hood'
Hugh Jackman has fought mutants, slayed vampires and gone toe-to-toe dancing with Zac Efron.
Samsung Galaxy Z Fold 8 Ultra: The Foldable We’ve Been Waiting For
Recent FCC filings confirm the upcoming Samsung Galaxy Z Fold 8 lineup, highlighting a new Wide model and more.
Superconductivity breakthrough could unlock ultra-efficient electronics
A clever nanoscale redesign may have solved one of superconductivity’s biggest problems. Researchers in Sweden discovered that by subtly sculpting the surface beneath an ultrathin superconducting material, they could make it stay superconducting at higher temperatures and under much stronger magnetic fields.
New plasma trick could unlock smaller, more powerful computer chips
A new technique could solve one of the biggest challenges in making future computer chips from ultrathin materials. Researchers found that coating molybdenum disulfide with oxygen or fluorine lets manufacturers remove just the top layer of atoms much more safely during plasma processing. The result is a cleaner, more controlled path toward smaller and more capable electronics.
We now know how DJI’s dual camera Osmo Pocket 4P compares to Insta360’s
DJI’s dual camera Osmo Pocket 4P is ready to challenge Insta360’s Luna Ultra.
Insta360 Luna Ultra review: Let the gimbal camera wars begin
Insta360's first gimbal camera is a high-powered Osmo Pocket rival that you can actually buy.
Samsung S95H OLED Review: Not Quite the 'Ultra' Frame TV We Wanted
The Samsung S95H OLED TV is great for gaming, while its color performance could have been better.
The Apple iPhone Fold/Ultra may have been delayed to next year
Originally, it was expected to be unveiled alongside the iPhone 18 Pros this September. With the higher than usual amount of leaks about the iPhone...
More Galaxy Z Fold 8 ‘Ultra’ leaks confirm it looks just like a normal Samsung foldable
Previous reports indicated that Samsung has reassigned the standard naming scheme to a shorter, wider foldable. The latest leaks from...
Scientists Built a Tiny “Universe” And Watched Time Emerge From Chaos
Scientists created a miniature universe using 24,000 ultracold atoms where time emerges from entropy flow, potentially solving physics' biggest mystery.
[144] Accel Entertainment, Inc. SEC Filing
Stock Titan provides an ultra-fast stock market news feed and multiple tools for traders and investors.
Galaxy Z Fold 8 ‘Wide’ reportedly has a stronger inner display than the ‘Ultra’
A new report reveals that the Samsung Galaxy Z Fold 8, the wide one, will have a stronger inner display than the Ultra thanks to its glass.
The Apple Watch Ultra 4 Finally Addresses Its Only Major Flaw
Apple addresses size complaints with the Ultra 4, offering a thinner profile while adding advanced hypertension detection and improved battery efficiency.
One California politician’s unexpected crusade against ultra-processed food
Jesse Gabriel "has passed more food policy in three years than most legislators enact in their entire careers," says one supporter.
Apple’s iPhone Ultra Now Tipped To Launch In 2027 With A Base Price Of $2,000, While The High-End Variant To Cost $2,200
Apple is apparently pushing back the debut of its iPhone Ultra amid an onslaught of engineering and supply chain-related challenges.
Samsung's iPhone Ultra rival reportedly more crease-free than the Galaxy Z Fold8 Ultra thanks to thicker UTG
An industry report from South Korea suggests a significant difference between the more compact and wider Galaxy Z Fold 8 on the one hand, and the "Ultra" version of the classic foldable form factor on the other. According to the report, the wider iPhone Ultra competitor from South Korea appears to be significantly less prone to creases than the Galaxy Z Fold 8 Ultra.
iPhone Ultra Price: Apple’s Foldable Must Protect The iPhone 18 Pro
Apple's rumored $1,999 foldable iPhone could help absorb rising component costs and reduce pressure to raise prices on mainstream models.
'Disclosure Day' lands out-of-this-world opening weekend with $93 million at global box office
Steven Spielberg's alien oddity 'Disclosure Day' conquered the world this weekend with a $93 million gross, while the ultra low-budget horror 'Obsession' continues to surge in its fifth weekend in theaters.
Is SMIC N+3’s Metal Pitch Smaller than Intel 18A’s?
Almost four years ago, we published that SMIC had started shipping 7 nm (N+1) chips. Now, SMIC is shipping its third-generation 7 nm (N+3) process in Huawei’s Kirin 9030, with a minimum metal pitch of 32.5 nm, about 10% tighter than the 36 nm minimum metal pitch shipping in Intel’s latest Panther Lake CPUs on 18A. The headline is true, but incomplete cherry picked metric. N+3 reaches the density of TSMC N6 through aggressive DUV multi-patterning and design-technology co-optimization (DTCO), but it pays for that in complexity, efficiency and process control. We found this and more in our reverse engineering and teardown where we cover SMIC’s N3 process technology, Huawei’s packaging, memory, architecture, and more. SemiAnalysis has been building a state-of-the-art teardown lab in Oregon capable of analyzing the world’s most advanced and important chips over the last year and half. We have already generated revenue on advanced datacenter chip teardowns including our recent reverse engineering of a major TSMC customer’s COUPE CPO optical engine + EIC 3D stack. This is the first public report from the SemiAnalysis Teardown Engineering & Evaluation Lab, or STEEL for short. The lab is aggressively scaling up and out and we’re excited to announce it publicly. This is a bit of inconvenient timing for TechInsights as they are private equity owned and currently being sold while having enjoyed virtually no credible competition for decades. This has led to TechInsights underinvesting in CAPEX. SemiAnalysis exceeds TechInsights in revenue despite no venture or private equity ownership and being founded only 6 years ago. Because we have no external investors and are founder led, we move faster, build faster, and we can release client chip teardowns for free regularly, while focusing on datacenter for our major clients. Here’s the first public image from our lab, the HiSilicon Kirin 9030 Pro SoC: This report will detail our teardown of the Kirin 9030 and our findings on SMIC’s N+3 process, the most advanced in China. For comparison, we’ll show our teardown of the MediaTek Helio G99, made on TSMC N6. Through this comparison, we can look at the effect of export controls – SMIC N+3 and TSMC N6 are comparable nodes, but one is heavily export-controlled, the other free to use the West’s most advanced equipment. Here we see both China’s progress and constraints. SMIC N+3 reaches TSMC N6-class logic density, but it requires far more aggressive DUV multi-patterning, so it does not match N6 on process maturity or cost. The Kirin 9030 Pro performs similarly to three-year-old Android flagships, and trails far behind the current flagship SoCs from Apple, Qualcomm, MediaTek, and Samsung. The efficiency gap is even wider. Export controls have not stopped Huawei and SMIC from shipping advanced silicon, but they have forced a different path. Without EUV, SMIC is leaning harder on DUV multi-patterning, DTCO, and increasingly complex integration. The roadmap continues forward through tighter design rules and backside power, but each step adds cost and process risk. Huawei’s τ scaling and LogicFolding show another path: stacking active logic and recovering density through advanced packaging and system-technology co-optimization (STCO). To understand the Kirin 9030, we must first understand Huawei’s SoC history. HiSilicon is Huawei’s chip design arm, responsible for the Kirin smartphone SoCs, Kunpeng server CPUs, Ascend AI accelerators, and switch/router networking silicon. Before export controls, Huawei was TSMC’s largest customer – the only customer on TSMC’s first EUV node, N7+, and among the first on N5, alongside Apple. That ended in late 2020. Huawei switched to Qualcomm SoCs in its flagship smartphones, though export controls limited them to 4G-only variants. In late 2023, Huawei returned to in-house silicon with the Kirin 9000s, a successor to the Kirin 9000, fabricated on SMIC N+2 instead of TSMC N5. In the following years, they released the Kirin 9010 and 9020 on the same N+2 process. These chips used Huawei’s in-house TaiShan CPU cores and Maleoon GPU. We have not torn down a Kirin 9020 ourselves, so the predecessor die shot is from Kurnal. The die shots show how Huawei spent its silicon budget: which functional blocks are where, and how their areas compare to the predecessor. First, a quick guide to the major blocks on the die. The total die area is nearly identical, but the 9030 uses that area more aggressively. A denser process lets Huawei fit an extra middle CPU core, more GPU and NPU cores, and larger caches into the same footprint. In contrast, the Helio G99 is a much smaller, low-cost SoC, built for budget smartphones rather than a flagship device. While the Kirin 9030 is ~140 mm², the G99 is only ~29 mm², roughly one-fifth the area. The underlying TSMC process technology, however, is directly comparable as a baseline for analyzing SMIC’s. The Kirin 9030 is an evolutionary refresh, not a clean-sheet design. Its CPU, GPU and NPU cores carry over the 9020’s families, and the gains come from three levers: the SMIC N+2-to-N+3 process step, DTCO and floorplan work, and incremental microarchitecture. Area is where the first two show up, and the 9030 scales well here. Performance and efficiency are the harder test. Huawei’s design holds up better than its node would suggest, but the chip still trails, both because N+3 sits behind the leading-edge nodes and because its cores, while competent, remain a few generations behind the newest designs. The new prime core is an incremental update. The main changes are a 10% frequency increase from 2.5 GHz to 2.75 GHz and a doubling in the L2 cache from 1 MiB to 2 MiB. Despite the increased cache, the core size decreased by 7.6%. Excluding the private L2 cache, the core size decreased by 21%. This is a large reduction for an incremental node. Compared with the TaiShan New V120 core in the Kirin 9020, the Kirin 9030’s middle core is almost unchanged architecturally, yet each core shrinks by ~22%. Most of that comes from the move from N+2 to N+3, with layout likely accounting for the rest. Visually, the most noticeable change is the increase from 3 middle cores to 4. There is also a 20% increase in the shared L3 cache of the big cluster. This helps to improve multi-core performance without sacrificing much in terms of area. Even with each core shrinking, the big CPU cluster’s total area is essentially unchanged. The per-core savings went back into an additional middle core and larger caches. The tiny cores shrank less than the prime core (excluding its L2 cache) and less than the middle cores. This is likely because fixed overhead is a larger share on a small core. We cannot resolve any architectural changes from the die shot alone, but the per-clock and efficiency gains shown below point to more than pure process and layout scaling. The area reduction was offset by a doubling of the shared L2 cache from 2 MiB to 4 MiB, leaving the total tiny CPU cluster area slightly larger. Area is the easiest improvement to see from a die shot, but it is only one part of PPA (power, performance, area). For modern logic, power and performance matter just as much, and often more. Since Dennard scaling broke down in the mid-2000s, voltage and frequency have not scaled in step with transistor dimensions, so each node has had to fight harder for gains in performance and efficiency. The starkest comparison is not Kirin 9020 versus Kirin 9030 Pro. Apple’s efficiency cores run circles around Huawei’s prime core. Apple’s low-power core delivers 20% higher integer performance while drawing only 1 W, compared with 4.5 W for Huawei’s prime core. N+3 matches TSMC N6, but N6 is several generations old. Apple and Qualcomm build on N4 and N3P, which are denser and sit on a better voltage-frequency curve, giving them a larger transistor budget and more performance per watt. The 9030’s own cores did improve. The middle and tiny cores gained 17% and 14% in per-clock integer performance over the 9020, with floating-point flat on the middle core and up 11% on the tiny. The tiny core improves cleanly, with performance rising while power falls and efficiency increases by 45% in integer and 24% in floating point. The middle core is mixed: integer performance rises but power rises faster, cutting integer efficiency by 7%, while lower power lifts floating-point efficiency 16%. Per-clock gains at the same or lower frequency are microarchitectural, so the cores are tuned, not just shrunk. Both also failed to hold their rated maximum frequencies, pointing to thermal, power, or stability limits. Per clock, the middle core sits around Arm Cortex-A720 and the tiny core near the Cortex-A520; absolute performance trails because Huawei clocks them much lower. The prime core is roughly Cortex-X2 class per clock, a 2021 design. Apple’s 2020 M1 Firestorm core is still 35% higher per clock and 57% faster in absolute integer performance at a similar 4.5 W. The current leading edge is further ahead again: the Apple M5 P-core is 60% higher per clock and 2.7× faster, the Arm C1 Ultra 45% higher and 2× faster. Matching older high-end cores per clock is a genuine design achievement. What Huawei cannot match is the voltage-frequency curve and transistor budget of leading-edge nodes, which let Apple, Qualcomm and others spend more transistors in the same area on wider cores, larger caches and deeper buffers while running at lower voltage. Huawei’s LogicFolding roadmap is one answer, stacking active logic to recover density and shorten signal paths. We return to it later. The GPU compute units (CUs) changed more visibly than the CPU cores, moving to a more rectangular layout for both the arithmetic logic unit (ALU) clusters and the CU overall. Even with ray-tracing support added, a CU shrank ~28%. However, that shrink is offset by the increase from 4 to 6 CUs and the area outside the CUs grew 33%. Overall, the GPU cluster is larger by ~10%. The GPU is where Huawei makes its biggest gains. The Maleoon 935 is not competitive with current flagships, but it is a large step up from the 920 and reaches older-flagship territory. In 3DMark it is 70% faster in Wild Life Extreme (WLE) and 79% faster in Steel Nomad Light (SNL) than the 920; with 11% higher clocks and 50% more CUs, the ~67% theoretical uplift roughly matches WLE and is beaten by SNL. It edges ahead of the Snapdragon 8+ Gen 1 in WLE and SNL, and the Dimensity 9200 and Apple A16 in WLE, but stays far behind newer parts: the Snapdragon 8 Elite Gen 5 and Dimensity 9500 are ~2.4–2.6× faster in WLE and ~3.2× faster in SNL. The Maleoon 935 is Huawei’s first GPU with hardware-accelerated ray tracing; there it lands slightly ahead of the Exynos 2200, and on par with the Apple A16, with current flagships up to 3.7× faster. The Neural Processing Unit (NPU) saw the largest structural changes of any block, moving from a Lite and a Tiny core in the Kirin 9020 to a Lite and two Tiny cores in the Kirin 9030. Both core types also show significant layout changes. This is a reversal in Huawei’s NPU design. The Kirin 9000 5G, its last flagship chip on TSMC N5, used two Lite and one Tiny core. The series of SoCs on SMIC N+2 moved to one Lite and one Tiny core, likely for area savings. With the Kirin 9030, Huawei has shifted back toward a larger multi-core NPU cluster, but with the additional area going to a Tiny core rather than a Lite core. We’re diving deep into the most advanced datacenter and AI hardware hitting the market. To learn more about what’s in the pipeline or to commission a custom teardown, contact sales@semianalysis.com. Interested in joining us on this ride and think you can be a difference maker? Check out our Careers page. Before diving into the process stack, the package and memory are worth separating from the SoC itself. The Pro variant of the Kirin 9030 carries 12 GB of Samsung DRAM, with two stacks of four dies each. The dies were identified as the K4L2E165YD, a 12 Gb LPDDR5X-9600 device fabricated on Samsung’s 1a node, the fourth generation of its 10 nm-class DRAM after 1x, 1y and 1z. 1a has shipped in volume since 2022, so this is current memory rather than older-node inventory. The 16 GB Pro Max variants we obtained were found with both CXMT and Samsung packages. The CXMT package is marked CXDD7JEDM, with two stacks of four dies, packaged in week 45 of 2025. The inferred die dimensions from X-ray computed tomography (CT) are consistent with a known density of ~0.3 Gib/mm² for the CXMT G4 process, roughly equivalent to other manufacturers’ 1z processes. The Kirin 9030 uses a typical integrated package-on-package (iPoP) stack: multiple DRAM dies in a memory package sit above an organic redistribution layer (RDL) interposer, which sits above the SoC and package substrate. The full package is then mounted to the printed circuit board (PCB) through ball-grid array (BGA) solder bumps. The memory package substrate is a thin bismaleimide-triazine (BT) laminate carrying the LPDDR5X stack. The organic RDL interposer over the SoC routes the PoP signals around the die and carries possible dummy thermal copper pillars. The package substrate, a thicker Ajinomoto Build-up Film (ABF) build-up over a BT core, fans the flip-chip bumps out to BGA pitch and embeds the power planes. The whole stack is organic. The only silicon is the SoC and the LPDDR5X dies; there is no silicon interposer. Keeping it all-organic brings the package’s coefficient of thermal expansion (CTE) close to the PCB’s, reducing board-level warpage, and avoids the cost of a silicon interposer the SoC’s bandwidth does not need. In an iPoP stack, the memory package connects to the organic RDL interposer through an array of solder bumps. Underfill fills the gap around those bumps, adding stiffness and protecting the joints from mechanical stress. The Pro and Pro Max variants differ here, which we cover behind the paywall. The die shot and architecture tell us how Huawei allocated its silicon budget. The process tells us what SMIC can manufacture. We use the Helio G99 as the process reference for TSMC N6. Both SMIC N+3 and TSMC N6 are evolutions of previous 7 nm-class nodes. We used targeted TEM cross-sections through logic and memory regions, imaged in both fin-cut and gate-cut directions. Each cross-section caption gives its horizontal field width (HFW), the real width of the imaged area. We start at the transistor fins, then move up through standard cells, local interconnect, and SRAM. SMIC has not overtaken Intel or TSMC. It uses aggressive DUV scaling and DTCO to reach N6-class density, but that density doesn’t translate into comparable performance and efficiency, for two reasons: the node gap to leading-edge nodes, and Huawei’s core designs. Fin Profile One of the most important knobs in a FinFET process is the fin profile: the shape of an individual fin and the channel where current passes from source to drain. The ideal fin is tall, narrow, and nearly vertical. A taller fin increases effective channel width, while a narrower fin improves electrostatic control by thinning the body the gate must control. Push either too far, and the process pays for it: weaker drive current, fragile fins, taper, footing and line-edge variation that hit yield and device variability. The Intel 22 nm, 14 nm, and 10 nm fin cross-sections show how FinFET nodes have improved over time. 22 nm fins were a first-generation structure, relatively short, wide and strongly tapered. The shape limits current density and reduces gate control uniformity across the height of the fin. At 14 nm and 10 nm, Intel pushed the fins taller and narrower while also making the sidewalls more vertical. Rather than shrinking the device, these changes increase the effective channel width per fin and improve electrostatic control. The trade-off is that taller fins at tighter pitches are much more difficult to manufacture. Now, let’s compare the Helio G99 on TSMC N6 with the Kirin 9030 on SMIC N+3. Both processes are in the same class, with fin pitch of 30-32 nm on N+3 and 34 nm in our N6 cross-section. The pitch for N6 is especially interesting as N7’s HD library is generally listed with a 33 nm fin pitch, and N6 did not shrink pitches directly. Its density gains came from DTCO instead of tighter pitches. The 34 nm pitch was stable across our sampled region and serves more as a comparison against the SMIC N+3 we have not investigated further. Pinning down N+3’s fin patterning scheme takes more than one core unit. The CPU cores show a dense ~32 nm pitch, with the pitch between N-P fin pairs alternating between 78 and 88 nm. Logic alone may be consistent with dual-pitch mandrels of 120 and 110 nm, but this is a complex and unusual approach. Combining the pitch from the the 8T SRAM, which has more complex repeat unit, with the CPU core sequence allows us to reverse engineer the patterning steps with more confidence. As both the logic and SRAM should share the same base grid, a single CD mandrel lithography pattern with 128 nm pitch undergoing SAQP produces a die-wide ~32 nm grid (128 nm/4), which supports the pitch sequencing seen in both logic and SRAM cells. In the sampled cross-sections, N+3 shows a taller, narrower, higher-aspect-ratio fin than N6. The measured fin aspect ratio is ~9.5:1 on N+3 versus 7.8:1 on N6. N+3 also shows less top rounding, with an estimated radius of ~2 nm, compared with 2.8 nm on N6. Even though the fin widths differ, the ratio of top rounding to fin width tells the same story, with N+3 at 0.37 and N6 at 0.44. In a geometric sense, lower is better; a perfectly rectangular fin would have no top-rounding penalty. These are single-digit-nanometer features measured from a handful of cuts, so treat the absolute numbers as approximate. The important result is the relative gap: N+3’s fins are consistently taller, narrower and less rounded than N6’s. We’re diving deep into the most advanced datacenter and AI hardware hitting the market. To learn more about what’s in the pipeline or to commission a custom teardown, contact sales@semianalysis.com. Interested in joining us on this ride and think you can be a difference maker? Check out our Careers page. Standard Cell A standard cell is the basic building block of chip layout: a fixed-height row pairing one NMOS and one PMOS transistor that share a gate, tiled in a grid to build logic blocks. The key dimensions are contacted gate pitch (CGP), cell height (CH), fin count, and the lower-metal routing grid. To measure density, we use the Bohr metric: a weighted average of NAND2 gate area (60%) and scan flip-flop area (40%). This represents a realistic mix of combinational and sequential logic. This metric has its limitations, especially for complex cell layouts like TSMC’s FinFLEX, which alternates cells with different fin counts. Even so, it is the best metric for a pure process-level comparison. Another important measurement is the fin pitch; it refers to the distance between two fins of the same transistor. In a FinFET process, multiple fins are used in each transistor to increase the drive current and thus performance. TSMC N6 ships both a high-density (HD) library with 2 PMOS and 2 NMOS fins per cell, and a high-performance (HP) library with 3 of each. More fins under the shared gate mean more effective channel width. HP cells switch harder at the cost of area. Designers mix the two on a die, primarily spending HP cells on timing-critical paths, and matching their PPA targets. In the Cortex-A55 core of the Helio G99, we found a cell height of 240 nm for the HD cell. MediaTek has used HD cells in the G99 to minimize die size and thus cost. As an SoC for budget smartphones at ~$100, this is essential. By contrast, we found only one library in the Kirin 9030, with 2 NMOS and 2 PMOS fins. This suggests a narrower library strategy than TSMC N6, where both HD and HP libraries are widely used. This likely reflects the smaller customer base and the more constrained domestic design and electronic design automation (EDA) ecosystem. In all three CPU cores of the Kirin 9030, we found cell heights of 228 nm, 5% smaller than on N6. This is also a reduction of 9.5% over SMIC N+2’s cell height of 252 nm. SMIC N+3 and TSMC N6’s HD library both feature a CGP of 57 nm. For SMIC, this is a 9.5% shrink over N+2. In the past, CGP and cell height alone may have been enough to compare transistor density. Now, however, we must consider scaling boosters and DTCO as well. SMIC’s density gain does not come from EUV. It comes from using every available DTCO booster aggressively. First is fin depopulation: reducing the number of NMOS and PMOS fins in each cell. The first FinFET nodes started with 3 or 4 fins for each transistor. SMIC N+3 and TSMC N6 HD both use only 2 fins per transistor, trading drive strength for density. Next is contact over active gate (COAG). By landing the gate contact directly over the active gate, instead of out over the isolation region, the cell height drops. N+3 integrates COAG while N6 does not. Our N+3 gate-cut cross-sections indicate COAG, with the gate contact sitting over the active region, while N6 shows an off-gate contact. Last is single diffusion break (SDB). Diffusion breaks are inserted between cells in the same row to provide electrical isolation, but they also introduce local layout effects (LLE), layout-dependent shifts in electrical characteristics. In the past, a double diffusion break was used, consuming the space of two CGPs. SMIC N+3 and TSMC N6 instead use SDB, saving area but increasing LLE sensitivity. This must be controlled at the process level and accurately modeled in the process design kit (PDK) so that EDA tools can account for it. Overall, SMIC N+3 has a transistor density of 113.4 MTr/mm², slightly above TSMC N6 at 107.7 MTr/mm². Even without EUV, SMIC has achieved density beyond TSMC’s mature N6 node which utilizes EUV. Metal Stack The smallest critical dimension in the teardown is M0; SMIC N+3 uses a 32.5 nm local metal pitch. That is smaller than the 36 nm M0 pitch on Intel 18A in Panther Lake. However, this does not mean that SMIC has a better process than Intel 18A or TSMC N3P. M0 is a local intra-cell routing layer. Its usefulness depends on the full interconnect stack: M1 and M2 pitch, track count, via and line resistance, design rules, mask count, overlay control, and routing flexibility. The 32.5 nm M0 is consistent with self-aligned quadruple patterning (SAQP), whose four-population line-width loading we read coarsely as alternating widths of 21.5 to 24 nm; M1 and M2, at 38 and 40 nm, are consistent with self-aligned double patterning (SADP), a single A/B split. On TSMC N6, M0, M2, and M3 sit at a relaxed ~40 nm and are consistent with SADP-class double patterning, with no need for quadruple patterning. That said, we measure M2 for example at ~43 nm, likely inflated by sparse routing. We do not assign any specific layer to EUV from our cross-sections; the distinction we can draw is double versus quadruple patterning, not lithography wavelength. Transistor-level density in the front-end-of-line (FEOL) sets an upper bound, but the design is ultimately limited by what the interconnect stack can route. The lowest metals are the most important for standard-cell density, but the semi-global and global layers determine how usable that density is at the block and chip level. Two axes are commonly used for chip cross-sections: the fin-cut and the gate-cut. The micrograph above is a fin-cut and shows metals 0 through 3. This axis lets us see the even-numbered metals, with M0 right above the fins. There are two kinds of M0 lines. The first are the power rails; these are wide wires for the VDD and VSS running horizontally at the top and bottom edges of each standard cell. The wide wires measure 55 nm across, more than double the other M0 lines. Their width minimizes resistance and reduces IR drop. The second kind are intra-cell wires, short segments within the cell that connect terminals to M1. These have alternating widths between 21.5 and 24 nm. The M0 pitch is 32.5 nm, a 19% reduction versus N+2 and N6. At this pitch, DUV patterning requires more aggressive multi-patterning, increasing mask count, overlay sensitivity, process complexity and cost. M0 is below what a single DUV-defined spacer (SADP) can resolve, so SMIC cascades a second spacer step (SAQP). The cross-section reflects the cost: the M0 trenches are visibly more re-entrant (narrower at the bottom than the top) than M1 or M2 on the same chip and carry a bright barrier-rich foot where the trench meets the etch-stop layer. That shape is partly the intended damascene profile, as a slightly narrow bottom helps void-free copper fill, but its magnitude at M0 is driven by the tight pitch and the higher trench aspect ratio. Intel 18A supports an M0 pitch of 32 nm, although Panther Lake has only shipped with a looser 36 nm pitch. This is due to Intel’s heavy usage of HP libraries. Among leading-edge nodes, 18A has the loosest M0 pitches due to PowerVia. With power routing moving to the backside, congestion is reduced, and the entire front-side metal stack can be used for signal routing. M2 is the first true inter-cell routing layer. It runs horizontally like M0 but spans across multiple cells to carry block-level signals. The M2 pitch sets the cell’s track height – the number of M2 tracks that fit between the VDD and VSS rails, defining what the library calls a 6-track or 7.5-track cell. This layer is the most important, limiting the routing of entire blocks. SMIC N+3 features a 5.7-track cell. The M2 pitch is 40 nm, a 5% decrease over N+2 and the same as N6. This shrink keeps the pitch at the edge of what is possible with double patterning. Future nodes will need to increase the number of masks for M2 as reducing the number of tracks is much harder due to the limitations in routing. The micrograph above is in the perpendicular direction, the gate-cut, and shows metals 0 through 4. This allows us to see and measure the odd-numbered vertical metal layers. The M1 pitch is 38 nm, 9.5% less than N+2 and 33% less than N6. The M1-to-gate ratio matters because it sets local routing flexibility. N+2 and N+3 use a 3:2 ratio, while N6 uses a 1:1 ratio, explaining the huge differences in M1 pitch. The more M1 lines there are compared with the gates, the more flexibility there is for power and signal crossing within the cell. Routing flexibility enables more complex and better cells. Clean fractional ratios are also preferred as a grid is periodic and improves layouts. The 3:2 ratio gives SMIC more local routing flexibility than a strict 1:1 grid, but it also complicates layout and patterning. This is a DTCO choice, with SMIC increasing process complexity to recover density and routability without EUV. This 3:2 ratio is not very popular in the leading-edge nodes. TSMC has only used it on N7+, the N5 family, and the short-lived N3(B). They have switched back to a 1:1 ratio for N3E. Intel has only used it on the 10 nm/Intel 7 family, with Intel 4, 3 and 18A all using a 1:1 ratio. Samsung is the only one still using a 3:2 ratio at the leading edge, using it in the SF4 and SF3 families. It remains to be seen if SMIC will remain at a 3:2 ratio or move to a 1:1 ratio with its future nodes. The industry is still actively exploring these local-routing ratios. At VLSI 2026, imec will be presenting work on even higher ratios, including a 2:1 scheme that can reduce area by up to 14%. We will be covering the conference in a future newsletter article. Subscribe We’re diving deep into the most advanced datacenter and AI hardware hitting the market. To learn more about what’s in the pipeline or to commission a custom teardown, contact sales@semianalysis.com. Interested in joining us on this ride and think you can be a difference maker? Check out our Careers page. The final local interconnect layer for N+3 is M3, with a pitch of 44 nm. The M3 pitch is the same as on N+2 and 10% larger than on N6. The semi-global layers carry the majority of block-level signal routing. They have a coarser pitch than the lower local layers. On leading-edge nodes, they are designed to sit at the limit of DUV single patterning. M4 through M11 pitches were found divided between 80–82 nm (M4–M6), 128 nm (M7–M10), and 148 nm (M11). Given limited sampling, it is possible these are divided further in dense routing areas. At the top are two giant metal layers, M12 and M13. These have kept the same pitches as N+2 at 1920 nm and 4600 nm respectively. While the lower layers’ pitches are generally fixed by the process and library, the upper layers vary much more in pitch and count, depending on the design. Even two smartphone SoCs on the same process can have wildly different metal stacks. The Helio G99 carries fewer routing layers, reaching coarse metal pitches of 850 nm by M9, while the larger and higher-performance Kirin 9030 keeps fine pitches until M11. SRAM At the leading edge, SRAM is much more difficult to scale than logic. TSMC’s latest nodes have seen little to no bitcell scaling, while logic still has more DTCO levers to pull. While looking for other logic libraries in the GPU compute units, we stumbled upon the SRAM. The most common type of SRAM has 6 transistors (6T), but this cell had 8 transistors (8T) instead. 8T SRAM adds two transistors to form a dedicated read port. Unlike a 6T cell, where reading disturbs the storage, the decoupled read port removes read-disturb, improving read stability and letting the cell be pushed harder for performance. At first glance, the cut looked like an unusual logic library, with each cell row having 3 fins of one polarity and 5 fins of another. The rows also alternated in orientation. Energy-dispersive X-ray spectroscopy (EDS) resolved our confusion. The cut had not landed on the GPU logic, but on the SRAM macro beside it. The unusual fin pattern was due to the SRAM library. We return to EDS in the process flow analysis behind the paywall. SRAM libraries are not like traditional logic libraries. Due to the unequal number of PMOS and NMOS transistors, they require specialized rules and layout libraries. They do not need the flexibility of logic libraries, so they are hyper-optimized for one purpose: dense, reliable memory. The SRAM cell we found is a 1:2:2-2:2 cell. This means there is 1 fin per pull-up (PU) PMOS transistor, and 2 fins per pull-down (PD) and pass-gate (PG) NMOS transistor. These 2 PU, 2 PD and 2 PG transistors would usually form a single 6T high-current cell (HCC). An 8T HCC adds a read-pull-down (RPD) and a read-pass-gate (RPG) NMOS transistor, each with two fins. We measured a cell height of 406 nm, which brings the bitcell size to 0.0463 µm². That is a theoretical peak density of 21.6 Mib/mm². We estimate that a 6T HCC would have a cell height of 292 nm and a size of 0.0337 µm². This is ~12% larger than a 6T HCC on Intel 3 and 4. We also estimate the 6T high-density cell (HDC) to have a cell height of 228 nm and a size of 0.0260 µm². This is coincidentally the same as the logic standard-cell height measured earlier. The estimate puts the cell near Samsung 7LPP/5LPP and slightly below TSMC N7/N6. That is a theoretical peak density of 38.5 Mib/mm². 6T HDC is arguably the most important cell as it is used for the largest caches in a chip, the L3 caches and system-level cache (SLC). Both the Kirin 9020 and 9030 have split the SLC into 4 banks to raise total SLC bandwidth. In the Kirin 9030, the SLC increased from 2 MiB to 3 MiB per bank. Correspondingly, the number of arrays within the bank also increased by 50%, from 16 to 24. Each array can store 128 KiB and forms an orderly pattern on the die shot. From the Kirin 9020 to the Kirin 9030, the area of a 128 KiB SLC array decreased from 0.0477 mm² to 0.0392 mm², an 18% shrink. The achieved density is 25.5 Mib/mm², 66% of the theoretical maximum. While the SLC was quite similar across both chips, the L3 has seen some major changes, particularly in terms of its layout. The total capacity also went up from 10 MiB to 12 MiB. Much like the SLC, the L3 is also split into 4 banks. In the Kirin 9020, an L3 bank consisted of 16× 128 KiB arrays and 16× 32 KiB arrays. However, an L3 bank in the Kirin 9030 instead consists of 48× 64 KiB arrays. In the Kirin 9020 L3, a 128 KiB array was 0.0513 mm² and a 32 KiB array was 0.0154 mm². The size of the 128 KiB array is different on the L3 and SLC as the assist circuitry for the two arrays differs depending on their purpose. In the Kirin 9030 L3, a 64 KiB array is 0.0210 mm². Although not a like-for-like comparison, normalized for capacity, it is 18% smaller than the 9020’s 128 KiB L3 array and 31% smaller than its 32 KiB L3 array. The achieved density is slightly lower than the SLC, at 23.8 Mib/mm², 62% of the theoretical maximum. Unlike the L3 and SLC, the prime cores’ private L2 cache uses a 2-bank design. As the prime cores’ L2 is latency-critical, it likely uses 6T HCC instead of 6T HDC. The 9020 has 16 arrays in each bank while the 9030 has 32. Each array has a capacity of 32 KiB. A 32 KiB array in the L2 shrank from 0.0171 mm² to 0.0142 mm², ~17% smaller. The density is 17.6 Mib/mm², ~59% of the theoretical maximum for 6T HCC. SRAM scaled well from N+2 to N+3, shrinking by ~19%, close to the theoretical logic shrink. The caveat is that N+2’s bitcells were unusually large, bigger than comparable 7 nm-class nodes, so part of the gain is catch-up rather than true scaling. With the insights from STEEL’s teardowns, we will be doing a deep dive into SRAM in a future newsletter article. Subscribe Everything above came out of a single STEEL teardown: die annotation, block-level area analysis and TEM cross-sections through logic and SRAM. We’re diving deep into the most advanced datacenter and AI hardware hitting the market. To learn more about what’s in the pipeline or to commission a custom teardown, contact sales@semianalysis.com. Future Roadmap The same cross-sections that pin down N+3 also show where SMIC can go next. Although N+3 is already close to the practical limits of DUV multi-patterning in several layers, SMIC still has a few scaling levers left. A theoretical N+4 would likely start with cell height. N+3 uses 5 M0 tracks between its power rails. Moving to 4 M0 tracks, as on SMIC N+2 and TSMC N6, could reduce cell height by roughly 15%. The routing grid is only one side of the shrink; the front end also must fit into the smaller cell. One possible FEOL lever is reducing the p-to-n isolation spacing from two diffusion grid units to one. Intel used this scaling booster on Intel 4, and TSMC did so on its N3 family. This path trades layout flexibility for density. Fewer M0 tracks reduce local routing resources, while tighter p-to-n spacing raises integration and design-rule difficulty. M2 is also constrained by the cell height shrink. For SMIC to maintain a ~5.7-track cell, M2 would need to move toward ~35 nm. That would move another layer into SAQP territory. SMIC could also reduce the CGP from 57 nm to 54 nm. Intel reached a similar CGP on Intel 10 nm/Intel 7 without EUV. The local interconnect is also tougher. If SMIC keeps the 3:2 M1-to-gate ratio, M1 would need to shrink to 36 nm and would likely require SAQP as well. If SMIC moves to a 1:1 ratio, M1 could relax to 54 nm, but it would give up routing flexibility. Under this theoretical path, we estimate that SMIC N+4 could reach a cell height of 198 nm and a CGP of 54 nm, implying a Bohr density of 137.8 MTr/mm², on par with TSMC N5 or Samsung SF4. However, the difficulty is cumulative. Each step is individually plausible, but together they make N+4 harder than the transition from N+2 to N+3. It will likely take longer, cost more, and carry less process margin. A theoretical N+5 would require a larger integration shift. One possible path is backside contacts (BSCon), moving power routing and source/drain contacts to the backside, which would reduce front-side routing pressure and enable another reduction in cell height. The front-side metal pitches could relax to reduce the process complexity. M0 would likely relax slightly to ~34 nm, and M2 and M4 pitches could relax further. CGP is unlikely to shrink much further. Even with EUV, 48 nm has been the practical limit for yield and process control. This approach would allow N+5’s cell height to fall to 170 nm and its CGP to 53 nm. This implies a Bohr density of 163.6 MTr/mm², on par with Intel 18A’s HP library. However, this would not make N+5 cost-competitive with the leading edge. It would reach a similar density through a much more expensive route. The integration difficulty rises sharply, with new process flows for backside alignment, wafer thinning, contact reveal, and backside metallization. Past this point, standard density and interconnect scaling become increasingly unattractive. That is where Huawei’s roadmap stops looking like a normal foundry roadmap and starts looking like a packaging roadmap. At ISCAS 2026, Huawei unveiled its tau (τ) scaling law, reframing process scaling in the time domain. τ is the time cost of data movement and processing: switching delays in transistors, RC signal propagation delays in circuits, compute, memory, and networking latency. Outside Huawei’s terminology, this is called system-technology co-optimization. This is Huawei’s answer to its lack of EUV lithography. Without EUV, planar density cannot keep pace with TSMC, Intel, or Samsung. If transistor density cannot shrink further, Huawei’s alternative is to shorten wires, reduce buffering, and stack logic vertically. “LogicFolding”, Huawei’s implementation of this new scaling idea, is, in practice, an aggressive 3D stacking approach. AMD V-Cache places SRAM above or below a CPU die. AMD’s MI350X places active interposer dies (AIDs) underneath accelerator and compute dies (XCDs), with the AIDs handling cache, IO interfaces, the network-on-chip (NoC) and embedded metal-insulator-metal (MIM) capacitors. With LogicFolding, parts of the same logic block are split across multiple active dies bonded face-to-face at ultra-fine pitch. This allows Huawei to shorten some critical paths and reduce buffer overhead, not merely add cache capacity or offload the IO and interconnect. Shortening wires is where the higher clocks come from. A large share of a modern core’s delay and energy budget goes into driving long interconnects and the repeater buffers along them. LogicFolding distributes a block’s critical-path gates across multiple stacked tiers bonded at a very fine pitch, so the bond interface behaves like an additional metal layer and the longest paths get shorter. That is how Huawei expects to recover frequency and efficiency it cannot get from the process alone. Huawei’s roadmap shows its intent. Prime core frequency is targeted to rise from 2.75 GHz in the Kirin 9030 to roughly 5 GHz by 2031, far beyond what planar scaling alone could deliver. Prime cores with 3.1 and 3.39 GHz clocks are being tested in its labs, although their power consumption is unknown. Beyond that, chips are in the design, simulation or pathfinding phase, meaning the frequencies are targets. However, the direction matters more: LogicFolding also helps with performance, not just density. The catch is that Huawei’s density claim is not directly comparable to foundry densities. A stacked design can report more transistors per package footprint by adding active layers, even if each patterned die remains well behind TSMC or Intel in front-end density. This is how Huawei can claim to reach foundry 14A-equivalent density by 2031. This is not a like-for-like foundry comparison, with Huawei using stacked logic and measuring density per package footprint. On a normalized Bohr-density basis, SMIC N+3 is ~114 MTr/mm², 38% less than Intel 18A’s HD library. Huawei’s 3D roadmap closes the gap by stacking active logic, reaching 215 MTr/mm² by 2030. In 2031, the roadmap density jumps to 295 MTr/mm², implying either a third active layer, partial EUV insertion or aggressive planar DUV scaling. Huawei’s methodology makes other foundries look much denser as well. Applying it to AMD’s MI450X with an N2 top die on an N3P base die yields a theoretical density of 460.2 MTr/mm² in 2026, compared with Huawei’s 295 MTr/mm² in 2031. This Kirin 9030 does not use LogicFolding, remaining in a conventional mobile SoC package. Instead, it forms the baseline for how far Huawei and SMIC can push planar scaling. Future teardowns of Kirin and Ascend chips will show both planar logic density and Huawei’s hybrid bonding solutions. Export controls changed China’s optimization problem rather than ending it. EUV restrictions raised the cost and complexity of leading-edge manufacturing without freezing it. SMIC reaches N6-class logic density through DUV immersion, SAQP and DTCO, while Huawei shifts more of the burden onto architecture, packaging and system-level integration. Future nodes will be tougher. N+3 still had room to tighten local metals and reduce cell height and CGP. Further scaling without EUV leaves fewer levers. More aggressive multi-patterning adds masks and overlay error. SMIC can keep pushing DUV, but each step will get more expensive and less forgiving. The design side is just as critical. Huawei had domestic EDA tools and flows before the Kirin 9030, with the Kirin 9000s, 9010 and 9020 making that clear. Huawei was able to ship multiple consumer SoCs on SMIC N+2 and N+3 while cut off from the Western EDA stack. US export controls restricted EDA tools for advanced chips in 2022 but did not target tools for more mature chips. In 2025, the US government briefly placed much broader restrictions on EDA software from Synopsys, Cadence, and others, before lifting them less than two months later as part of a trade deal tied to rare earths. Huawei has been unable to access those tools because it remains on a US trade blacklist. That forced Huawei, SMIC and Chinese academic institutions to build their own tools and flows. Researchers at Peking University recently announced a prototype EDA tool for Huawei’s LogicFolding architecture, which requires a new flow to handle the multilayer layout and floorplan. This is not the same as replacing the full Synopsys or Cadence stack, but it shows where domestic EDA is headed: toward tighter co-optimization between architecture, process and packaging. These advances are also diffusing into the Chinese ecosystem. SMIC is licensing its N+2 and N+3 processes to HLMC/Hua Hong at the government’s direction rather than by choice. If the same process learning feeds into Ascend accelerators for AI training and inference, the choke point shifts from one named fab to an ecosystem. Alibaba’s T-Head silicon arm and Cambricon, a Chinese AI chip designer that is expected to supply ByteDance, could also be major beneficiaries. Sanctions aimed at SMIC alone become less effective once the manufacturing knowledge has spread to other fabs and design houses. China is not closing the gap with Intel, Samsung and TSMC. The teardown shows the opposite in several places: no EUV, no backside power, higher process complexity, and visible trade-offs. But China is still advancing. If domestic chips become good enough for phones, inference, networking and security-sensitive workloads, they can matter strategically without matching TSMC at the leading edge. Behind the paywall, we show what else STEEL can do, with material and process flow analysis of SMIC N+3, and analysis of the Kirin 9030 package. We’re diving deep into the most advanced datacenter and AI hardware hitting the market. To learn more about what’s in the pipeline, access the full Kirin 9030 and SMIC N+3 analysis or to commission a custom teardown, contact sales@semianalysis.com.
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Multiple AirPods models hit record low prices this week, including the AirPods Pro 3 and AirPods Max 2. We're tracking these great discounts alongside an ultra rare discount on a new Switch 2 on Woot, plus a Summer sale at Sonos. Note: MacRumors is an affiliate partner with some of these vendors. When you click a link and make a purchase, we may receive a small payment, which helps us keep the site running.
Leaked Fold 8 vs. Fold 8 Ultra images show what everyone got wrong
The images assuage the main concern people have with the Fold 8 wide.
GI Doctor’s 3 Favorite Cheap, High-Fiber Dinners to Boost Gut Health
In TODAY.com’s Expert Tip of the Day, a gastroenterologist and mom of two reveals the low-cost dinners she makes on repeat without ultraprocessed foods.
Halo: Campaign Evolved Stumbles on Unreal Engine 5, as RTX 5090 Barely Cracks 100 FPS at 1440p Ultra
Halo Campaign Evolved UE5 remake struggles to hit high FPS on RTX 5090 at 1440p, proving optimization worries valid.
After years of waiting, One UI 9 finally brings this status bar feature to Galaxy phones
One UI 9 now supports adding a network speed indicator to the status bar and disabling live activities using a Good Lock module.
Galaxy S25 gets Galaxy S26’s two Galaxy AI features missing from its One UI 8.5 update
The Galaxy S25 series' new update brings two Galaxy AI features from the Galaxy S26 lineup that were missing from its One UI 8.5 update.
The wide Samsung Galaxy Z Fold8 and the Galaxy Watch Ultra 2 receive new certifications
They will both be available in India, unsurprisingly. Samsung's upcoming wide-format Galaxy Z Fold, most recently believed to be called Galaxy Z Fold8...
Luna Ultra: Insta360 Finally Reveals Full Details of the Leica-Branded Gimbal Camera
Insta360 has finally pulled the curtain fully off the Leica-branded gimbal camera it calls the Luna Ultra.
Insta360's Luna Ultra Takes On DJI's Osmo Pocket Gimbal Cameras
Insta360 has launched its first gimbal camera, the $770 Luna Ultra.
[8-K] Agassi Sports Entertainment Corp. Reports Material Event
Stock Titan provides an ultra-fast stock market news feed and multiple tools for traders and investors.
University of New Haven Graduate Students Demonstrate Excellence at National Collegiate Sports Analytics Championship
Tasked with analyzing and interpreting a large amount of data in a short period of time, master’s candidates in sport management exceled presenting their findings to industry leaders and embracing the ultra-competitive, fast-paced environment simulating working in sports.
Logitech Mobi Fold review: The ultra-compact travel mouse
The Mobi Fold is an excellent travel accessory for anyone who wants something that’s better than the built-in touchpad on their laptop.
Ahead of Apple MacBook Ultra: macOS 27 gets touchscreen support
With the MacBook Ultra, Apple will soon be launching its first laptop with an OLED touchscreen. The first beta version of macOS 27 already shows that macOS is being prepared for this laptop, as the system can be officially operated via touchscreen for the first time.