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Scientists win Nobel Prize in medicine for work on ‘light-gated ion channels and optogenetics’
Scientists to Karl Deisseroth, Peter Hegemann and Georg Nagel won the 2026 Nobel Prize in Physiology or Medicine.
Turkish-Japanese Science and Technology University opens in Ankara
Turkish-Japanese Science and Technology University, a joint project agreed on by the two countries in 2013, opened Monday in Ankara, offering undergraduate courses in engineering and doctoral programs in artificial intelligence and earthquake science.
YH Entertainment Warns of Investment Fraud Impersonating AND2BLE's Japan Management
YH Entertainment Warns of Investment Fraud Impersonating AND2BLEs Japan Management
Japan’s Nippon To Buy Akzo’s Southeast Asia Decorative Paints Business For $1.35 Billion
The deal gives Nippon Paint—controlled by the family of late Singaporean billionaire Goh Cheng Liang—access to Akzo’s operations across Indonesia, Malaysia, Singapore, Thailand, Vietnam, Papua New Guinea and Australia.
They survived World War II and lost decades, but not 2026. Japan's century-old businesses are disappearing at a record pace
Japan’s century-old businesses face mounting pressures from rising costs, labor shortages, a shrinking market and succession challenges.
Countries race to provide oral health care for all in 100-Day Sprint across Asia
Twenty Asian countries and areas across the WHO Western Pacific and South-East Asia regions vowed to strengthen essential oral health benefits as part of a “100-Day Sprint” initiative, during the 16th Asian Chief Dental Officers Meeting held from 27 to 29 September in Kota Kinabalu, Malaysia. The meeting marked the midpoint of the 100-day sprint bolstering support for countries to develop essential oral health benefit packages that can be integrated into national universal health coverage plans. Convened by the two WHO regional offices and the Malaysian Ministry of Health as the Secretariat, the meeting brought together national oral health leaders from 20 Asian countries, staff from all levels of WHO, WHO collaborating centres and other development partners. Participating countries and areas included: Bangladesh, Bhutan, Brunei Darussalam, Cambodia, China, Hong Kong (SAR) China, India, Indonesia, Japan, Lao People’s Democratic Republic, Malaysia, Maldives, Mongolia, Nepal, the Philippines, Singapore, Sri Lanka, Thailand, Timor-Leste and Viet Nam. Participants reviewed progress and refined proposals using the WHO Service Package Delivery and Implementation (SPDI) Platform. Countries conducted bottleneck analyses across four key areas: service delivery, workforce, access to essential medicines and health products, and health financing. They identified practical actions to address implementation challenges and refined proposed revisions to their national oral health benefit packages. “There is no health without oral health. Through the 100-Day Sprint, countries are advancing the implementation of the Western Pacific regional implementation plan on oral health and strengthening progress towards universal health coverage,” noted WHO Regional Director for the Western Pacific Dr Saia Ma'u Piukala. Participants identified bottlenecks and proposed workable solutions to strengthen access to essential oral health care through primary health care, sharing experiences and discussing how best to translate policy commitments into feasible and sustainable action at the country level. Malaysian Minister of Health Datuk Seri Dr Dzulkefly Ahmad highlighted the importance of prevention and primary health-care approaches to improve oral health: “Oral diseases can have lifelong consequences, yet many are preventable. By integrating essential oral health care into primary health care and promoting prevention in schools and communities, we can improve oral health across the life course.”The WHO team led by Dr Huong Tran, Director of the Division of Health Promotion, Disease Prevention and Control of the WHO Western Pacific Region and national oral health leads from over 20 Asian countries visited the SK Pekan Putatan School, Sabah for school oral health programme including flouride mouth rinsing. © WHO / V. ChaudharyDr Huong Tran, Director of the Division of Health Promotion, Disease Prevention and Control for the WHO Western Pacific Region, emphasized key collaborative roles WHO can play. “Oral diseases are the most common noncommunicable diseases, yet many can be prevented and treated through essential oral health services delivered at the primary health-care level,” she said. “By sharing experiences and using WHO tools such as the SPDI Platform, countries are accelerating progress towards universal health coverage for oral health.” “Integrating oral health into broader health services is essential for reducing inequities, expanding access and recognizing oral health as an integral component of overall health and well-being. The 100-Day Sprint provides an important opportunity to translate this commitment into practical action and ensure that quality oral health services reach all people, especially those most in need,” said Dr Suman Rijal, Director of the WHO South-East Asia regional Department of Healthier Populations and Noncommunicable Diseases. As host of the meeting, Malaysia showcased ongoing efforts to strengthen oral health care through primary health care and prevention-focused approaches, while providing a platform for countries across the two WHO regions to exchange experiences and accelerate progress towards universal health coverage for oral health. “WHO is encouraged by Malaysia's leadership in addressing the burden of oral diseases and advancing universal health coverage for oral health through practical, country-led action,” said Dr Rabi Abeyasinghe, WHO Representative to Malaysia, Brunei Darussalam and Singapore. Countries will continue to refine and figure costs for national oral health benefits during the remaining sessions of the 100 days. These efforts support implementation of the WHO Global strategy and action plan on oral health 2023–2030, while also helping to expand access to essential oral health services through stronger and more equitable health systems across the WHO Western Pacific and South-East Asia regions.______________For more information, or to arrange media interviews, contact: WHO Regional Office for the Western Pacific: wprocom@who.int WHO Regional Office for South-East Asia: SEMediaRelations@who.int
Oral health status and functional outcomes in Japanese adults with hemophilia: an exploratory cross-sectional study stratified by HIV status
Scientific Reports - Oral health status and functional outcomes in Japanese adults with hemophilia: an exploratory cross-sectional study stratified by HIV status
Phillies news: Trea Turner, Don Mattingly, Adley Rutschman
Need to dip in the Japanese market a little more
Denis Shapovalov retires, Carlos Alcaraz advances to Japan Open semifinals
Denis Shapovalov was playing a high level of tennis against Carlos Alcaraz before suffering the injury that forced him to retire at the Japan Open.
Japan's impact on Mississippi takes center stage with 18,000 jobs
Mississippi leaders and Japanese officials discussed trade, jobs and the future of a key international partnership at Millsaps.
Japan's entertainment robots diversify with AI, offer comfort
The range of home entertainment robots is becoming increasingly diverse in Japan, with some providing emotional comfort like pets, and others serving as fashion accessories due to their cute appearance.
Shaping the Future of Global Health: 'Go Healthy with Taiwan 2026' Unveils Top 20 Innovators from 62 Nations
TAIPEI, Taiwan, October 02, 2026--The "Go Healthy with Taiwan 2026" global proposal campaign has selected 20 semifinalists from 832 proposals across 62 countries, with two more rounds of selection still to come. The 20 shortlisted teams hail from 16 countries worldwide, including Australia, Brazil, Canada, Ethiopia, France, India, Israel, Japan, Malawi, New Zealand, Philippines, Poland, Spain, Tunisia, Ukraine, and U.S.A., fully demonstrating strong international diversity and innovative energy.
A CEO-led group has agreed to buy TNL Mediagene’s Japan business.
$5.5 million is subject to adjustment; at least $4.5 million must be paid or satisfied at or before closing, expected by Oct. 30 and subject to conditions.
Japanese Charts: Fire Emblem Sales Plummet, But It's Still Enough To Stay On The Podium
Quiet week, eh?
Kato Elected Science Council Head on Shift to Public Corporation
Tokyo, Oct. 1 (Jiji Press)--The Science Council of Japan elected Kazuto Kato, professor emeritus at the Univer…
Rahm Emanuel, former Chicago mayor, tours New Orleans schools. 'Louisiana is working.'
Rahm Emanuel, the former Mayor of Chicago and former Ambassador to Japan, toured New Orleans schools on Wednesday as he floats a presidential run in 2028.
Tokyo court grants legal protection to human voices in AI clone case
A Tokyo court has awarded legal protection for the human voice in a landmark case involving a popular Japanese anime voice actor | KCBS All News 106.9FM and 740AM
Tokyo court grants legal protection to human voices in AI clone case
A Tokyo court has awarded legal protection for the human voice in a landmark case involving a popular Japanese anime voice actor | WBBM Newsradio 780 AM & 105.9 FM
Tokyo court grants legal protection to human voices in AI clone case
A Tokyo court has awarded legal protection for the human voice in a landmark case involving a popular Japanese anime voice actor | KNX News 1070 AM
Tokyo court grants legal protection to human voices in AI clone case
A Tokyo court has awarded legal protection for the human voice in a landmark case involving a popular Japanese anime voice actor | Talk 1370
Tokyo court grants legal protection to human voices in AI clone case
A Tokyo court has awarded legal protection for the human voice in a landmark case involving a popular Japanese anime voice actor | WWJ Newsradio 950
Kei Nishikori, a tennis pioneer for Japan, says goodbye to the sport at home
The former world No. 4 ended his career in Tokyo, in front of the fans for whom he became a sports hero.
Scientists Find Structural Guide to Unusual Magnetism in Quantum Materials
Researchers in Japan found that a crystal’s structural dimensions classified magnetic states more consistently than electron concentration.
Casio's new ultra-limited MRG-D5000 fuses titanium and solid sapphire, but costs more than 10 Grand Seikos
Casio has officially launched the MRG-D5000, its first sapphire MR-G, at 11 million yen including tax, which is about $69,520 — that's equivalent to 10.3 Grand Seiko Snowflakes. Only 20 will be made worldwide, sold by lottery in Japan from December, and the bezel is cut entirely from blue sapphire.
Japan’s patchy business mood takes pressure off BOJ for immediate hike
By Makiko Yamazaki and Leika Kihara TOKYO, Oct 1 (Reuters) - Japanese manufacturers' confidence hit an eight-year high over July-September but non-manufacturers' mood soured, a central bank survey showed, painting a mixed picture of the economy that ma...
Japan business mood improves, tankan survey shows
By Makiko Yamazaki TOKYO, Oct 1 (Reuters) - Japanese business confidence improved in the three months to September, a quarterly central bank survey showed on Thursday, suggesting the economy was
Japan business mood improves, tankan survey shows
By Makiko Yamazaki TOKYO, Oct 1 (Reuters) - Japanese business confidence improved in the three months to September, a quarterly central bank survey showed on Thursday, suggesting the economy was weathering the hit from the Middle East conflict and bo...
Japan business mood reaches 8-year high, bolsters case for BOJ hikes
Japanese business confidence hit an eight-year high over July-September amid elevated inflation expectations, a central bank survey showed, indicating an economy weathering the Middle East conflict and bolstering the case for interest rate hikes.
Over 85 Percent Of Japanese Game Developers Are Using AI
A survey by a Japanese industry body suggests developers primarily use it for debugging, but that its usage extends to in-game assets as well
ICYMI: Ocarina of Time remake website has tons of footage showing areas, dungeons, items, and more
An abundance of gameplay footage for the upcoming Ocarina of Time remake is available on the game’s official Japanese website, showing many elements that were
Avex expands stake in S10 Entertainment and targets full ownership
Japanese music company Avex has expanded its stake in management firm S10 Entertainment by acquiring 85% of the company.
Japan can lead the world in making preventive health pay
This op-ed argues that Japan, as the world's first super-aging society, can set a global standard for how prevention protects health, workers, and prosperity. Preventive health must be treated as core economic infrastructure for sustaining workforce participation and fiscal stability.
PS5 Pro Shortage Hits Japan As Sony Limits Console Purchases To Active Playstation Users Ahead Of GTA 6
A lottery system has been introduced in an effort to counter shortages while alleviating scalper concerns ahead of GTA 6
Amid PlayStation 5 Pro Shortages, Sony Implements Lottery System Based on Playtime
No one is exempt from the global DRAM shortage, and today Sony confirmed there might be a way for enthusiastic gamers to purchase the PlayStation 5 Pro console at MSRP. In Japan, Sony is running a lottery system that explicitly allows gamers with 60 hours of playtime to purchase the console....
The Nintendo 64 turns 30 today, and we're feeling old
Nintendo's new cartridge-based machine had landed in Japan three months earlier, and now it was time for North America to experience 64-bit console gaming. The hype machine...
Avex Increases Ownership of Brandon Silverstein's S10 Entertainment
Japanese entertainment giant Avex Inc. owns 85% of Brandon Silverstein's S10 Entertainment with a shared goal of reaching 100%.
Ao Tanaka helps Japan complete Venezuela comeback
Ao Tanaka helped Japan complete a dramatic comeback as Ayase Ueda’s stoppage-time winner secured a 2-1 victory over Venezuela in Hiroshima.The Leeds United midfielder was introduced at half-time at ...
The Beclowning of Scott Bessent
One iron law of current politics is that nobody who associates themselves with Donald Trump emerges with a shred of credibility. For some, that’s not a big loss — it’s not as if anyone respected Pete Hegseth even before he decided that the key to military success in an age of drones and AI was more testosterone. For others, however, the costs are real. I’m old enough to remember when Marco Rubio was widely considered a reasonable, thoughtful politician. Right now, however, my candidate for the biggest loser is Scott Bessent, the Secretary of the Treasury. Bessent started out with significant reputation to lose: When Trump selected him, this was the headline in the Financial Times: Jason Furman, Barack Obama’s chief economist, described him as a “credible Treasury secretary who has a real understanding of the global economy”. But Bessent has now transformed himself into the Baghdad Bob of bonds. Three weeks ago, after intervening (for reasons that remain somewhat unclear) to support the Japanese yen, Bessent boasted about his ability to move markets and dared investors to bet against his, declaring “I am the house now.” He then tried to push long-term interest rates down, buying 30-year U.S. Treasuries in a move some have compared to paying down part of your mortgage by running up your credit card balance. Here’s how that’s going so far: To get some perspective on how high interest rates have gone, here’s a longer-term perspective: We haven’t seen interest rates this high since the fading days of the dotcom bubble. Why are interest rates hitting new records? The backdrop, as I argued in last Sunday’s primer, is the huge AI-driven investment boom; more on that next week. But the immediate cause of the latest interest rate spike was Trump’s rejection of an Iranian proposal to end the war. This rejection sent crude oil prices, which for a while had fallen considerably, shooting back up: It’s notable, by the way, that oil prices remain high even though a significant amount of oil is now being shuttled through the Strait of Hormuz by night, on smaller vessels. That’s an interesting story, which has a lot to do with the fact that oil from the Hormuz shuttle runs must be transferred to larger vessels before being shipped to markets in Europe and Asia; around 15 percent of the world’s large crude carriers are now parked off the coast of Oman, waiting to be tanked up. This is creating a shipping crunch: But that’s a topic for another day. For now, the point is that with oil still high and refined products, especially diesel, still close to record levels, inflation will remain elevated. And this in turn means that the Federal Reserve will keep short-term interest rates high, an expectation that is feeding into longer-term rates. Hence Bessent’s bond-market humiliation. The truth is that Bessent might not have been able to get interest rates down even in the best of circumstances. But he certainly won’t get anywhere as long as Trump keeps believing that he can somehow convert his Iran debacle into a triumphant victory. And Trump will keep believing that as long as he is surrounded by sycophants who tell him what he wants to hear. Sycophants like, for example, Scott Bessent, who is predicting the imminent collapse of the Iranian economy, possibly within two weeks. Bessent is right to say that the embargo on Iranian oil exports is placing the country under great economic strain. But his implicit prediction that this will quickly produce a deal that Trump can call victory looks no more plausible than his boasts about the bond market. The big question now is, why would anyone with a reputation to lose work for Donald Trump? As the beclowning of Bessent shows, joining the Trump team won’t just damage your reputation; it will utterly destroy it.
Japanese business presence in China down nearly 30% from peak in 2012: survey
The research found 1,221 new Japanese entrants in China since the last survey in 2024, but that was still less than during Covid-19.
China’s Wang Yi delivers high-level warning to Japanese business delegation
The top diplomat urged Tokyo to learn from historical lessons, in highest-ranking official reception since bilateral relations soured in November.
Mat3ra and the University of Tsukuba’s Center for Computational Sciences Sign MoU to Expand Access to Cloud-Based Materials Modeling in Japan
Mat3ra Japan K.K., the Japan entity of Exabyte Inc., the developers of Mat3ra.com, and the Center for Computational Sciences (CCS) of the University of Tsukuba today announced the signing of a Memorandum of Understanding (MoU) that establishes a framework for the use and dissemination of the Mat3ra.com computational materials platform within CCS and associated academic institutions in Japan. Under the MoU, Mat3ra provides CCS with free access to the platform for research and educational p...
Kyiv Science Academy hit, 10 dead as Russian jet-drones strike across Ukraine
In recent weeks, Russia has begun hitting Kyiv and other Ukrainian cities with faster, high-flying jet drones.
Japanese Baseball Is Fighting Back Against MLB Talent Drain
Nippon Professional Baseball is reimagining how to be a global juggernaut.
Japanese Charts: Fire Emblem: Fortune's Weave Shifts Over 120,000 Physical Copies
Red hot debut
A secret Stonehenge under Lake Michigan is baffling archaeologists
Stonehenge is one of many ancient stone circles dotted around the world, in Japan, Australia and even the US.
Famitsu sales (9/14/26 - 9/20/26) - first week sales revealed for Fire Emblem: Fortune's Weave
The latest Japanese hardware sales from Famitsu are as follows: Switch 2 – 34,341 PS5 Digital Edition – 7,441 Switch OLED – 2,634 Switch Lite – 2,248 Switch – 823 PS5 Pro – 219 PS5 – 187 Xbox Series X – 136 Xbox Series X Digital Edition – 116 Xbox Series S – 19 For comparison’s sake, here are the...
Long-lost 1919 silent comedy found in dusty antique shop in Japan -- it'll finally be seen again
Mela! Mela! Anime Japan!! 2026 Returns to Delhi with Anime, Japanese Culture, Food and Entertainment
Little Black Book, The annual celebration of Japanese anime, culture and entertainment will once again be supported by dentsu India
Scientists Test an Unexpected Sleep Aid Made From Tree Roots
A pilot study suggests that oil from underused Hinoki roots could be used in scented products for relaxation. Falling asleep can be compared to easing down a dimmer switch, with brain activity gradually shifting as sleep deepens. Researchers studying Hinoki, or Japanese cypress, are exploring whether its scent could help smooth that transition for women
How Israel’s regional neighbors see its upcoming elections
Israeli Prime Minister Benjamin Netanyahu’s right-wing bloc is squaring off against that of his main opponent, centrist Gadi Eisenkot.
Baum and Aseko enjoy big win
The Eintracht pair were part of Germany U21s’ victory in Latvia, while Kosugi’s Japan are still in the running for glory at the Asian Games. Germany U21s, with Frankfurt’s Noel Aseko and Elias B...
Japanese Free Agent Has Been Offered to Lazio
Lazio have reportedly been offered the services of Japanese attacking midfielder Ryotaro Ito, who is currently unattached.Lazio Can Still Sign a Free AgentWhen the transfer market in Italy closed in e...
Takuma Inoue vs. Tenshin Nasukawa 2 live results update
Welcome to the live results update for the Takuma Inoue (22-2, 5 KOs) vs. Tenshin Nasukawa (8-1, 3 KOs) rematch! Their bout headlines a Teiken Promotions card at the Toyota Arena in Tokyo, Japan. Fight fans in Japan will be able to catch the action live on Prime Video. The rest of the world will […]
Sony may reconsider plans to phase out physical discs for PlayStation.
The management of Japanese company Nippon Ichi Software and its Western publishing division NIS America announced that they are holding direct consultations...
Scientists Reinvent More Accurate Parachutes Using Japanese Paper-Cutting Art
Parachutes may soon get a revamp.
Intel Panther Lake Teardown, 18A, BSPD, GAAFET, SemiAnalysis STEEL
Panther Lake debuts the first commercial implementation of backside power delivery (BSPDN), introduces Intel’s first iteration of gate-all-around (GAA) transistors, and showcases their advanced packaging capabilities with its Foveros-S assembly. With Panther Lake, Intel’s manufacturing arc has shifted from nebulous roadmaps to shipped silicon, a significant milestone on their long road back to competitive semiconductor manufacturing. To evaluate the extent of Intel’s comeback, we tore down Panther Lake. The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page. Our teardown traces 18A from its four-sheet RibbonFETs (Intel’s marketing name for GAAFETs) and gate stacks through contacts, frontside and backside wiring, and the bonded carrier. We explain how these material and integration choices improve gate control and reduce resistance, while adding capacitance, thermal resistance, and process complexity. Our measurements put Panther Lake’s 18A compute logic and TSMC N3E GPU logic at similar logic density. However, 18A does not lead TSMC N3P, N2 or Samsung SF2 in peak density. Panther Lake’s CPU cores are incremental updates, and the high-end GPU still uses TSMC N3E. Panther Lake assembles one compute tile, one GPU tile, and one I/O tile atop a passive base tile using Intel’s Foveros-S advanced packaging. Both compute tile variants use Intel 18A. The Xe3 GPU options are a 4-core GT1 tile on Intel 3 and a larger 12-core GT2 tile on TSMC N3E. Both I/O tile variants use TSMC N6. [1], [2] Our analysis centers on the PTL-U compute tile, both the 4-core and 12-core GPU tiles, as well as the 12-lane I/O tile. In conventional chips, power and signal are routed through the same frontside metal stack towards the device frontend. Power rails consume scarce routing resources near the transistors, while tall via stacks carry VDD and VSS from the coarse upper wires to local rails. Backside power delivery (BSPD) moves the main power network behind the transistor layer, to the backside, separating it from frontside signal routing. We covered BSPD and its impacts in 2024. [3], [4], [5] Intel’s BSPD implementation, branded as “PowerVia”, routes power through dedicated backside metals to nano-TSVs, which connect those rails to local source/drain (S/D) contacts. Implementing that separation requires Intel to build the interconnect stacks from both sides of the wafer. The frontside comprises the M0-M14 signal stack, while the backside comprises the BM0-BM5 power stack. M0 and BM0 are closest to the transistors. The nano-TSVs connect the two sides, but Intel patterns and etches each via from the front after forming the contacts. A narrow via runs from the side of the contact deep into the silicon substrate. Intel then completes the frontside signal metal stack, bonds the wafer to a carrier, flips it and removes the original substrate until the buried via tips are exposed. The backside metal stack is then deposited directly on the revealed vias. The nano-TSV and backside-via profiles taper in opposite directions because Intel forms them from opposite sides of the wafer. The transistor structures form the FEOL. Local contacts and nano-TSVs connect them to the wiring. M0 begins the frontside interconnect stack. The silicon carrier remains attached above the frontside interconnects. It supports the device wafer during substrate removal and backside processing and remains part of the finished chip’s thermal path. PowerVia removes the main power distribution from the congested frontside metals, routing supply through shorter and wider backside wires. Its lateral landing still occupies area in the standard cell, so it recovers less cell area than a direct backside contact. [3] Nano-TSVs beside the logic devices carry VDD or VSS from the backside power network, while signal connections continue upward through the frontside metals. Backside Interconnects Samsung SF2 data is included for comparison to Panther Lake’s within this article. SF2 is the incumbent GAA foundry node but lacks BSPD, serving as a useful reference to evaluate 18A. A full teardown of Samsung’s S26 products, processed on SF2, will be shared soon.Nanosheet-cut EDS comparison. The PowerVia supply path runs from the backside Cu rails through Mo-lined W nano-TSVs to the local transistor contacts. In this cross section, the tapered connection spans roughly 150 nm from the contact level to BM0. The Ta liner confines Cu and promotes adhesion to the surrounding stack; the AlOₓ etch stop controls the next dielectric etch above the rail. Dielectric beneath the ribbons electrically separates the devices from the backside wiring and removes the conducting silicon body below the channel. [6] AlOₓ serves as an etchstop (ES), enabling endpointing and protecting the underlying layers. Low-volatility aluminum fluoride reaction products resist the fluorinated plasma, allowing a thin AlOₓ film to protect the metal while the surrounding low-k dielectric is removed. [6], [7]. While the BM0 and layers above the M1 lines show double AlOx layers, Our SMIC N+3 teardown showed single AlOₓ layers. SMIC uses a simpler local AlOₓ substack, while the remaining cap and etch sequence provide the required landing protection. So why double layers? The closely spaced AlOₓ doublets provide two protected endpoints in the etch sequence. Intel documents an AlOₓ/SiN/AlOₓ stack that explains the benefit. The main dielectric plasma etch stops on the first AlOₓ film; a selective wet clear opens that film; a second plasma etch removes the intermediate SiN and stops on the second AlOₓ film. The final wet clear exposes the metal landing surface. SiN is the intermediate dielectric in Intel’s published example. [8] The second stop protects the metal through a cap breakthrough. Wide openings can etch faster than narrow ones, and etch depth varies across the wafer. Metal under an early-clearing opening would otherwise be exposed while other openings still need more etching. Staged protection widens the process window and reduces metal erosion, corrosion and void formation. [8] TSMC documents AlN/AlOₓ/SiOC/AlOₓ above Cu, with AlN blocking Cu diffusion, and a simpler AlN/SiOC/AlOₓ variant that omits one AlOx film. [9] Levels with different opening sizes, aspect ratios, pattern densities and cap materials need different etch margins. A double AlOx stop is useful where another protected endpoint justifies the added processing. The extra film adds formation, selective opening and cleaning steps, plus another set of interfaces to control adhesion, moisture, and stress. These blanket films are opened through the existing via pattern, so each film does not require another lithography mask. AlOₓ adds parasitic capacitance when it replaces lower-k dielectric; two thin AlOₓ films can nevertheless contain less AlOₓ than one thick film. Total thickness, placement, and theintermediate dielectric determine the electrical cost. Deposition chemistry also changes AlOx permittivity and residual hydroxyl content, which can oxidize the underlying metal. [7], [8], [10], [11] The backside stack separates into relatively fine BM0-BM2 wiring near the devices and coarser BM3-BM5 power distribution. The largest pitch increase occurs between BM2 and BM3. BM0’s pitch closely matches the logic-row height, fitting local power delivery to the cell rows. Higher levels aggregate current through larger conductors: routing density becomes less important than low resistance and current capacity as the network approaches the package. This hierarchy provides wide power wiring for the power delivery network without consuming scarce frontside signal-routing resources. [3] The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page. Frontside Interconnects Intel 18A combines Mo-lined W contacts and nano-TSVs with a separate backside Cu power network. Samsung SF2 keeps power on the frontside, using Ti-based contact interfaces and Ta-based barriers and Co liners around Cu wiring. In 18A standard-cell rows, backside power rails supply the devices through nano-TSVs within the cells, freeing frontside routing resources. Samsung’s M0 accommodates both power and signal connections. From the device toward M0, the connection runs through a Ti-based S/D interface, W contact fill, a Mo-lined W via, and the Cu M0 wire. Mo supplies a conductive nucleation and adhesion layer for W, replacing the resistive TiN liner used in conventional W integration. This increases the effective conduction volume within the feature while retaining W fill and its established polishing, cleaning and etching processes. Intel’s Mo/W patent describes this integration tradeoff. The nano-TSV uses the same Mo-lined W construction in the backside supply path. [12] The move from TiN to Mo is an incremental change. While a full Co or Mo fill can also reduce the volume lost to liners in very small features, it requires new integration schemes that increase complexity and risk. Cu remains attractive for wider wires due to its low resistance. As wires and vias shrink, the diffusion barrier consumes an increasing fraction of their cross-section. [12], [12], [14] Intel uses Co/Ru liners at M0-M1, Co at M2-M4, and Nb at M5-M9. The lower-level liners help Cu adhere and reduce void formation during trench fills. Applied Materials’ Endura has new thermal control that facilitate wetting process, so the thin film continuity is good enough that good capillary pressure will drive Cu atoms to the via bottom without voiding. Intel’s choice to use Nb is particularly interesting. Intel’s Nb patent describes a conductive diffusion barrier intended to reduce the barrier’s contribution to resistance relative to conventional Ta-based barriers, particularly at via bottoms where all current crosses the barrier. The patent pairs Nb in coarser levels with the option of lower-cost PVD processing. [15], [16] The upper metal layers support thicker barriers formed through physical vapor deposition (PVD) despite its worse coverage and uniformity. Meanwhile, the lower metal layers require thinner barriers deposited through conformal atomic layer deposition (ALD). Co/Ru adds another material interface and requires controlled deposition and Cu fill. Changing liners and barriers by metal layer allows Intel to optimize interconnect resistance, process complexity, and reliability. [15, 16] RibbonFET, Intel’s name for its gate-all-around FETs (GAAFETs), replaces the FinFET’s vertical fins with four stacked horizontal silicon nanosheets, allowing the gate to surround the channel on every side. The path to GAAFET begins with the planar transistor. A planar MOSFET places the gate above the channel between its source and drain. Pairing an NMOS with a PMOS transistor creates a CMOS inverter, in which the NMOS pulls the output low for a high input, and the PMOS pulls it high for a low input. The gate must retain electrostatic control of the channel to ensure clean switching. As gate lengths shrank, the drain began to compete with the gate for that control, increasing off-state leakage. Electrostatic control was restored through an architectural evolution that raised the channel into a vertical fin and wrapping the gate around three sides. Called “FinFET”, this new architecture packed more effective channel width into a smaller footprint. Further scaling made it harder to maintain both drive current and leakage within smaller cells, and reintroduced the same problems planar MOSFETs faced. Nanosheet GAAFETs close the fourth side by replacing the vertical fin with a stack of horizontal nanosheets, each surrounded by the gate. The tighter electrostatic control suppresses leakage at shorter gate lengths while stacking adds effective channel width within the cell footprint. In a FinFET process, channel width changes in discrete steps as designers must add or remove whole fins. Nanosheet width can instead be adjusted continuously within the process’s design rules. Wider sheets increase drive current, while narrower sheets reduce capacitance at the cost of drive current. Intel 18A uses stacks of four nanosheets each and varies their widths across logic and SRAM. At the process level, adding more sheets to each stack increases effective channel width and drive current, but complicates fabrication. RibbonFET vs MBCFET Samsung began GAAFET production in 2022 with SF3E, following with SF3 and now SF2. Its ‘MBCFET’ provides a useful structural comparison with Intel’s first RibbonFET implementation. [17] STEEL is digging deeper into SF2, used in the Exynos 2600, and TSMC’s GAAFET N2, used in Apple’s A20 Pro, in upcoming newsletter articles. We’re throwing some teasers on X. Let’s compare Samsung SF2’s MBCFET with Intel 18A’s RibbonFET. Subscribe Even to the untrained eye, Intel’s extra nanosheet is obvious. Intel stacks four ribbons to Samsung’s three. Samsung’s sheets are much wider in these fields, so both sheet count and width matter to the available channel perimeter. Sheet width also changes which silicon surfaces carry current. On conventional (001) silicon, wide nanosheets emphasize the broad top and bottom surfaces, favoring electron transport; the larger sidewall contribution in a narrow sheet favors hole transport. Thinner sheets improve gate control but increase confinement and scattering. This makes width and thickness part of the NMOS/PMOS balance, alongside strain and threshold voltage. [18], [19] GAAFET designs like 18A use different work-function-metal (WFM) stacks for NMOS and PMOS. Around each ribbon, a thin SiOx interfacial layer separates the silicon channel from the HfOx high-k dielectric, with La providing dipole tuning and the WFM wrapping the dielectric. NMOS uses a TiAl-based stack, while PMOS uses TiN WFM. W fills the remaining gate trench, providing a lower-resistivity path where the work-function layers are no longer needed. In this field, the PMOS stacks leave room for W between ribbons, while the NMOS stacks occupy more of those gaps. A silicon-based dielectric marks the P/N boundary, allowing the PMOS and NMOS gates, sharing the same gate trench, to be processed sequentially. Fast logic paths, retention circuits, and SRAM need a family of threshold options. Changing threshold without substantially changing device dimensions, capacitance or fabrication complexity is valuable. FinFET processes typically use different work-function-metal stacks. In a four-ribbon GAA stack, the narrow sheet-to-sheet gap limits how much WFM can fit around each channel. La in the gate dielectric creates interfacial dipoles at the SiOx/HfOx boundary, shifting effective work function and tuning threshold voltage. This gives Intel another control alongside its NMOS and PMOS WFM stacks. Low-threshold devices improve critical-path drive; higher thresholds reduce leakage elsewhere. Dipole tuning is especially useful in GAA because it changes threshold without consuming the narrow intersheet gap with thicker WFM. Precise control of La incorporation, diffusion and interface quality has long been a challenge, limiting viability in high volume production but is now seen from every leading-edge foundry. Intel’s patent describes depositing a dipole-forming oxide above HfOx and annealing it toward the interfacial oxide before completing the work-function and fill metals. This separates threshold tuning from the space available for metal. Newer research addresses the thermal cost: imec’s 2026 dipole-middle research inserts the shifter between two HfOx depositions, shortening the diffusion path while protecting SiOx during patterning. [20], [21]Matched-cut EDS, Intel 18A (left) vs. Samsung SF2 (right). Intel retains raised source/drain epi beneath its contacts, while Samsung recesses W deep into the epi to form a V-shaped Ti-lined interface. The deeper contact increases metal-to-semiconductor area and shortens the current path from the lower sheets, reducing contact and spreading resistance. It also removes epi volume and brings the contact etch closer to the channel ends. Retaining more epi preserves the material available for strain transfer, especially from SiGe into PMOS. These geometries balance contact access against stress engineering and etch margin. [22], [23] Samsung stacks three sheets to Intel’s four ribbons, and both processes use sheet width to tune drive strength. In our Samsung cross-sections, widths range roughly from 19 to 30 nm in the NPU rows and 37 to 50 nm in the CU cell. The Samsung nanosheets taper, with the widest sheet at the bottom and the narrowest at the top. Both processes use HfOx gate dielectric and Ti-based work-function stacks, with Al in the NMOS stack. In the Samsung devices shown here, the dielectric and WFM occupy the intersheet gaps, leaving W above the top sheet. Intel’s PMOS stack leaves more room between ribbons, and W fills those gaps while the thicker NMOS stack leaves W mainly in the upper trench. Gate-stack EDS maps. The W between Intel’s PMOS ribbons provides a conductive path close to the lower gates. Where WFM fills the entire gap, the gate still surrounds the channel, but voltage reaches it through the more resistive work-function films. Thinner WFM and dipole tuning preserve room for low-resistivity fill; Mo and Ru are alternative fill metals being developed for further scaling. [24] A masked, sequential WFM flow explains the different gate heights and inter-nanosheet fill. The proposed sequence below shows how separate NMOS and PMOS work-function steps produce that geometry. Enabled by the BSPDN process, Intel replaces the dense-logic silicon subfin with dielectric, removing the parasitic conduction path below the ribbons and reducing substrate-related capacitance. A retained silicon body as in classical, non-SOI, planar and FinFET designs needs junction and punchthrough-stop engineering to suppress leakage. Dielectric isolation makes that leakage less sensitive to the subfin doping profile but adds removal and fill steps. It also weakens the direct thermal path through silicon, making the contacts, metal stacks and package more important for heat extraction. [24], [26] Fluorine is concentrated around selected Intel device structures in the maps. WF6 is a standard precursor for W nucleation and fill, while barrier films protect adjacent dielectrics from fluorine attack. Low-fluorine W processes reduce the residual-F burden. Chloride-based precursors avoid introducing F during W deposition, but require control of chlorine attack, nucleation and fill quality. The integration target is a continuous, low-resistance W path with a thin protective liner and minimal chemical damage to the surrounding stack. [20], [27], [28] The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page. We measured cell height, gate pitch, metal geometry, and ribbon dimensions at the XTEM sites shown below. The tables group these dimensions by site and device polarity. Our “sheet cuts” cross the silicon channel and show the ribbons end-on. “gate cuts” run along the channel through successive gates. The 18A logic cell dimensions point to a five-track logic library while the N3E and Intel 3 cell dimensions evidence a seven-track logic library. The DDR-PHY uses wider M0 wires and much larger spacing than core logic. That trades routing density for lower wire resistance and weaker coupling between neighboring nets. The geometry suits the current delivery and coupling requirements of analog, clock, and I/O circuitry. PowerVia lets 18A combine a compact cell height with wider M0 geometry by moving the main power rails off the signal-routing tracks. That relaxes local wire scaling while preserving a small cell footprint. Cell height and gate pitch set the geometric density; pin access and routability determine how much of it a real block can use. [29] The biggest takeaway from our gate-pitch measurements is that Intel 18A compute logic and TSMC N3E GPU logic have similar density in the Bohr representative-cell model. The 18A example is 18.6% denser than the Intel 3 GPU example. Gate pitches are nearly identical across the three sites, so cell height drives most of the difference. The Bohr model combines a four-transistor NAND2 spanning three gate pitches and a 32-transistor scan flip-flop (SFF) spanning nineteen pitches, weighting their densities 60:40. The sensitivity column shows how independently changing cell height and gate pitch by ±1 nm changes the result. This compares representative cell geometries; whole-die density also depends on cell mix and placement. The 18A P-core gives M0 substantially more metal cross section than the N3E vector engine. Treating each profile as a trapezoid gives 2.63 times the area per line and 1.84 times the area after normalization by routing pitch. The larger section reduces the geometric contribution to line resistance and lowers current density for a given current. Taller and wider wires also add capacitance, so circuit delay depends on the balance of resistance and capacitance. The DDR-PHY has less metal area per routing width than the 18A core fields, while remaining above N3E. [30] Area = height × (top CD + bottom CD) / 2, including liners. Area/pitch normalizes by routing width. Taper is the symmetric sidewall angle from vertical, with the largest angle belonging to the DDR-PHY. Compute tile The measurements show how ribbon dimensions and gate-stack geometry vary across the compute tile and between NMOS and PMOS to balance channel drive, gate load and the space needed for the dielectric/WFM stack across logic, SRAM and the DDR-PHY. Width mainly changes available channel perimeter; thickness also changes electrostatic control and carrier confinement. Gate-stack thickness then determines the space left for low-resistivity fill P-core and LP E-core logic Both the P-core and LP E-core use multiple nanosheet widths. Widths are measured on high-magnification XTEMs while wider-field images demonstrate additional width choices within the LP E-core. Multiple widths are expected even within an LP E-core. Timing-critical paths, buffers and cells with different fanout need different drive strengths. The lower-magnification fields show this width diversity beyond the sites quantified in the table. L2 and L3 SRAM GAA gives SRAM designers another way to balance the pull-up (PU), pass-gate (PG), and pull-down (PD) transistors. FinFET bitcells set device strength through fin count while GAA adds nanosheet width as a sizing knob. In a 6T SRAM cell, a strong pull-down relative to the pass-gate limits read disturbance, while a strong pass-gate relative to the pull-up improves writability. During a write, the pass-gate and write driver pull the node storing “1” below the inverter trip point. During a read, the pull-down holds the node storing “0” low. Bias, threshold voltage, mismatch and assist circuitry set the remaining margin. FinFET high-current cells commonly use a PU:PG:PD fin-count pattern of 1:2:2, a device-sizing ratio rather than a current ratio. Ribbon width lets Intel balance SRAM strengths without adding whole fins. The L2 cell uses its narrowest ribbons for PU and widest for PD, improving writability and read stability respectively. Intel’s disclosed HCC operates without assist; its denser HDC uses negative-bitline write assist. Pulling the selected bitline briefly below ground increases pass-gate overdrive so it can overpower the pull-up at lower supply voltage. That buys density and low voltage writability at the cost of boosting circuitry, switching energy, and additional voltage stress that must be controlled. [31], [32] Four rectangular ribbons give the perimeter = 8 × (width + thickness), before corner rounding. PG/PU is 1.49 and PD/PG is 1.16. The L3 structures closely resemble L2 in layout and cell height. Fewer L3 nanosheet widths are tabulated because fewer high-magnification images were available. DDR PHY The DDR-PHY trades density for controlled analog behavior and reliable off-chip signaling. It contains drivers, receivers, delay circuits, and calibration logic that set drive strength, sampling time, and voltage margin. Repeated four-sheet devices with similar widths fit the use of regular transistor units for matching and programmable drive. Its wider local wiring provides room for current delivery and separation of sensitive signals, while consuming more area than a dense core-logic grid. The layout serves the memory channel’s electrical requirements as well as digital logic density. [33] The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page. Intel 3 GPU devices Vector engine logic Intel 3’s XVE logic uses two-fin PMOS and NMOS devices with power rails in M0. Its cell height and M0 pitch give a seven-track geometry, two tracks more than the 18A logic. One-fin groups also appear among the two-fin devices. Intel 3 L2 SRAM The Intel 3 L2 SRAM uses the familiar HCC sizing pattern: one PU fin, two PG fins, and two PD fins. N3E GPU devices Vector engine logic The N3E XVE field contains repeated two-fin devices with seven-track cell geometry. N3E remains a FinFET process, giving Panther Lake a direct FinFET-to-RibbonFET comparison. N3E L2 SRAM The N3E L2 SRAM uses the same PU:PG:PD fin-count pattern of 1:2:2. Panther Lake-U follows Lunar Lake’s floorplan quite closely. Both pair 4 P-cores with 4 LP E-cores and NPU, media and display engines in similar locations. Lunar Lake also uses Xe2, the direct predecessor to Panther Lake’s Xe3 GPU. This makes Lunar Lake the most direct basis for our comparisons. Arrow Lake differs in core count and uses the older Xe-LPG GPU architecture, so we only use it where it offers a more direct component-level comparison. Compute tile Panther Lake compute-tile floorplans remain sparse even months after launch. Intel 18A’s backside metal and dielectric stack must be removed without damaging the underlying structures before a clean transistor-level floorplan can be imaged. Most published die shots hide or heavily process the background, but we are quite proud of the die shot we achieved and are excited to show the work we have done. We measured the areas of the key components on the compute tile and compared them with their Lunar Lake predecessors on TSMC N3B. These help us to capture changes in block area and compare the two chips across process nodes and designs. Our total tile areas exclude the scribe-line area. The compute-plus-GPU subtotal below uses the PTL-U compute tile and GT1 GPU; it excludes the I/O tile and passive base. Individual block areas use the boundaries marked on the floorplans The compute-plus-GPU row is recomputed from the displayed PTL-U and GT1 areas. Component rows use their stated per-region counts and are not an additive partition of the whole tile. The P-core area remains almost unchanged between Lunar Lake and Panther Lake, despite L2 capacity increasing from 2.5 MiB to 3 MiB. Arrow Lake uses the same Lion Cove core as Lunar Lake but also has a 3 MiB L2. Cougar Cove fits 20% more L2 into the same P-core area. The larger private cache keeps more of each core’s working set close to its execution units, reducing access to shared L3 and DRAM. Extra capacity adds storage leakage and lookup energy, so designers balance it against avoided lower-level accesses. The shared P-core L3 cache also shrank by 14.8%. [2] Cougar Cove combines a similar footprint with Intel’s reported power-efficiency improvements. RibbonFET’s tighter channel control reduces leakage, while PowerVia reduces supply droop and allows tighter voltage guardbands. [1] Darkmont’s four-core LP E-core cluster is 5.0% smaller than Skymont’s on Lunar Lake, with most of the reduction in its L2 regions. The 1 MiB region shrank by 8.4% and the 1.5 MiB region by 14.9%. The tag arrays also use one fewer visible row. Tags identify which memory addresses the data array holds, so rearranging them changes the cache’s layout and wiring without requiring less data capacity. [2] The LP E-cores share one L2. This pools capacity and avoids duplicating all the cache machinery, but the four cores contend for its banks and bandwidth. Their separate cluster also keeps light work away from the performance cluster and its L3, allowing that larger domain to sleep. [1], [2] Cache area includes more than the storage cells. Tags identify each line, decoders select rows, sense amplifiers read the small bitline signal, and wires connect to the banks. Splitting an array into smaller sections shortens wordlines and bitlines, improving access speed, but duplicates peripheral circuits. Panther Lake’s smaller cache regions therefore reflect the complete memory implementation, including how much of each region is devoted to storage. [34] Unlike Meteor Lake and Arrow Lake, Panther Lake has no separate SoC tile. The NPU, LP E-cores, memory controllers, PHYs, media and display engines now share the compute tile. This removes an active die and keeps CPU memory traffic on one die. The cost is moving PHY and I/O-related circuitry onto 18A: drivers, receivers and analog circuits must still meet external voltage, loading and signal-integrity requirements, so their area does not shrink like dense digital logic. [1], [2] The biggest shrink comes from the NPU, which occupies 36.9% less area. NPU 5 consolidates the same total INT8 MAC count into half as many neural compute engines. Each of the three NCEs has a larger MAC array to make the complete NCE envelope 22.6% larger than an NPU 4 engine. Consolidation also halves the number of scratchpads and SHAVE DSPs, from 12 to 6. The MAC array handles matrix multiplication and convolution, while SHAVE executes vector and custom operations that fit the array poorly. [1], [2], [35] The paired floorplans identify each NCE envelope and its scratchpad, MAC, and SHAVE regions. Each measured MAC polygon is counted once per NCE in the area accounting below. The scratchpads store weights, activations, and intermediate results near the MAC arrays, allowing repeated use without fetching them again from DRAM. Halving their number delivers the largest measured area saving but leaves less local storage for the same total MAC count. Layers that no longer fit locally require smaller working tiles or more transfers of intermediate data. The benefit depends on keeping the enlarged arrays busy while managing that tighter storage budget. [36] NPU 5 also adds native FP8. Using half the operand width of FP16 reduces storage and transfer demand, helping workloads fit the smaller local memory budget. Lower precision and format-dependent range make scaling and model validation part of deployment. Hardware activation functions further reduce work that would otherwise occupy the programmable DSPs. [1], [2] Microsoft requires an NPU to deliver at least 40 TOPS for Copilot+ PCs. Both Lunar Lake and Panther Lake meet this threshold, but Panther Lake uses significantly less silicon. GPU tiles Panther Lake is Intel’s first product with Xe3, its latest GPU architecture. It offers two different GPU tiles: a smaller GT1 tile with 4 Xe3 cores on Intel 3 and a larger GT2 tile with 12 Xe3 cores on TSMC N3E. Panther Lake allows us to compare the same GPU architecture across both Intel 3 and TSMC N3E. Wildcat Lake adds a third Xe3 implementation on Intel 18A. A future newsletter will detail Xe3 and its implementation differences across all three process nodes. GT2 scales Xe3 to a different physical layout, with render slices arranged vertically instead of GT1’s horizontal arrangement. Slice placement sets the distances to shared cache banks and the D2D interface. Those wires consume area and add delay, so scaling the number of Xe cores also requires a new balance of cache placement, routing and timing. [1] What’s immediately obvious is that the GT2 tile on TSMC N3E has much smaller Xe cores than GT1. These block areas include logic, caches, and routing. An Xe core on the GT1 tile is ~69% larger than one on Lunar Lake, and ~55% larger than one on GT2. Intel 3 therefore uses substantially more area per Xe core. The block-area gap exceeds the measured logic and SRAM density gaps, bringing routing, timing targets, cell mix, and floorplan allocation into the comparison. The measured vector/matrix engine region is almost unchanged between Lunar Lake and Panther Lake’s GT2 tile. Xe3 retains eight 512-bit vector engines and eight 2048-bit XMX engines per core. Its gains also come from feeding those engines more effectively: more resident threads hide stalls, and variable register allocation lets shaders trade registers per thread against the number of threads kept active. [1] The shared L1/SLM capacity increased by 33% from 192 KiB to 256 KiB, while its area increased only 5%, raising effective density by 27%. L1 retains reused cache lines, while software-managed SLM lets a thread group share data locally. Both reduce traffic to more distant memory. Allocating more SLM per group can also limit how many groups reside on a core at once. [1], [37] The GT1 tile carries 4 MiB of L2 against 16 MiB on the GT2 tile. GT1 divides its L2 cache into four 1 MiB banks, while GT2 uses eight 2 MiB banks. Each bank contains 128 macros, but each N3E macro stores 16 KiB, twice the Intel 3 macro’s 8 KiB capacity. The N3E macro is only 54% larger while holding twice as many bits, giving it 30% higher density: ~23.7 Mbit/mm² versus 18.3 Mbit/mm². Including bank-level circuitry, the gap widens to ~16.9 Mbit/mm² on GT2 versus ~10.4 Mbit/mm² on GT1. GT2 gains density with its macros storing more bits per unit area, and those macros occupy more of each cache bank. Larger macros spread decoder and sense-amplifier overhead across more storage, while a more compact bank layout reduces the share spent on control and routing. The compromise is longer wordlines and bitlines that carry more capacitance. [34] I/O tile Panther Lake uses two I/O tile variants, both fabricated on TSMC N6. The smaller one provides 4 PCIe 5.0 and 8 PCIe 4.0 lanes and serves lower-tier systems as well as those without a discrete GPU, while the larger one adds 8 PCIe 5.0 lanes, bringing the total to 20 lanes, for discrete-GPU connectivity. Panther Lake SKUs with the larger 10- or 12-Xe GPUs use the smaller I/O tile. [38] The smaller I/O tile adds a PCIe 4.0 block and a Thunderbolt block to Lunar Lake’s I/O layout, providing four additional PCIe 4.0 lanes and another Thunderbolt 4 port. Its repeated N6 blocks retain nearly identical areas and layouts. Reusing these proven PHYs and controllers avoids porting and requalifying external interfaces on 18A, where faster digital logic offers less benefit to circuits constrained by the off-chip link. [38] SemiAnalysis’s teardown lab (STEEL) dives deep into the world’s advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. We’re hiring technical experts from system to transistor and everywhere in between. Check out our Careers page. Panther Lake offers scalability and modularity through its disaggregated packaging that partition compute, GPU, and I/O silicon into separate tiles allowing for a suite of tile configurations. This partitioning makes the package part of Intel’s node economics as it determines how much leading-edge wafer area each product consumes, which functions can remain on other processes, and how much configuration freedom Intel can offer from a shared set of tiles. Furthermore, fabricating the compute and GPU tiles separately confines the new 18A process to the compute tile and allows graphics and I/O to use other, more established, and more cost-effective processes. For Panther Lake, the GPU and I/O tiles are assembled alongside the compute tile on a passive silicon base using Foveros-S. Intel’s current technology brief lists a nominal 36 µm pitch for Foveros-S. Through-silicon vias (TSVs) in the base connect the fine wiring above to the larger package connections below. The functional tiles sit side by side on that passive base in a 2.5D configuration. [39] Our cross-section through the compute and GPU tiles shows the package’s wiring hierarchy. Microbumps connect each active tile to the passive silicon base; its fine redistribution layer (RDL) carries the short, dense tile-to-tile links. TSVs carry connections through the base to the package substrate, which fans them out to the much coarser motherboard solder joints. The base supplies interconnect, while computation remains in the active tiles above it. [39] At the compute-tile edge, the higher-magnification inset shows a local microbump spacing of approximately 25.24 µm and a feature width of 12.33 µm. These local spacings are finer than Intel’s nominal Foveros-S value. The X-ray fields further confirm tighter neighboring bumps, consistent across every die-to-die area found on each tile. Additional X-ray analysis is offered after the paywall. Putting the memory controller beside the CPU removes the D2D transfer that CPU memory requests required in Meteor Lake and Arrow Lake. This avoids the extra transmitter, receiver, and link traversal, saving interface energy and latency. Panther Lake’s separate GPU still crosses a D2D link to reach DRAM, so its larger local caches also help contain package traffic. [1], [40] Smaller dies are less likely to contain a random fatal defect, and screening them before assembly prevents one bad tile from consuming a complete package of good silicon. Reuse also spreads design and qualification work across more products. Against those gains, Intel pays for the passive base, D2D circuits, extra bonding and test steps, and losses during assembly. Cost per working product across the portfolio captures the combined effect of wafer yield, reuse, test, and assembly. [29] Wildcat Lake packaging Intel launched Core Series 3, formerly Wildcat Lake, on 16 April 2026 for value mobile and edge systems. Wildcat Lake keeps 18A but removes the passive base and combines more functions on one die to simplify the package. The two products therefore reveal two distinct ways to commercialize the same leading-edge process. [41] Wildcat Lake’s 18A die combines up to two Cougar Cove P-cores, four Darkmont LP E-cores, two Xe3 cores and a smaller NPU. A separate platform-controller die supplies I/O, connected through UCIe, Intel’s first processor implementation of the standard. Consolidating graphics remove a tile boundary and the passive base, reducing assembly complexity for a modest-bandwidth value product. It also ties CPU and graphics scaling to the same die, giving up Panther Lake’s ability to swap in a much larger GPU. [42], [43] In July 2021, Intel CEO Pat Gelsinger set out an ambitious process roadmap aimed at regaining performance leadership by 2025, later described as five nodes in four years. Five years and one CEO later, Intel’s comeback story is not as unambiguously positive as Pat may have hoped. [44], [45] Intel once set the pace for process technology, bringing high-k metal gate technology and FinFETs into volume production years ahead of the rest of the industry. Its 22 nm FinFET process reached consumers with Ivy Bridge in 2012. [46] Intel’s integrated device manufacturing (IDM) model allowed its architects and process engineers to co-optimize products and processes. Starting with Sandy Bridge, Intel dominated x86, while AMD struggled with Bulldozer. That lead faltered at 14 nm and broke at 10 nm. Intel targeted a massive 2.7× density increase, but the node arrived years late and required several revisions before it could support Intel’s full lineup. This delay forced Intel to stretch 14 nm across six generations, while TSMC moved ahead in process technology and AMD recovered in x86. By 2019, Intel was still shipping 14 nm across most of its product stack, with its 10 nm client ramp focused on Ice Lake mobile processors. Meanwhile, TSMC was shipping N7 and N7+, and AMD’s Zen 2 compute chiplets used N7 to raise core counts and improve efficiency. Intel’s process failures were central to its decline, but unsound business decisions furthered their downward slide. Product delays compounded product mistakes, pushing client, server, and FPGA roadmaps off schedule. Several attempts to enter AI (Nervana and Gaudi) and networking (Tofino) also failed to establish lasting businesses. Intel’s recovery has focused on consumer CPUs and advanced packaging. Tiger Lake, Alder Lake, Lunar Lake and now Panther Lake have restored Intel’s consumer roadmap. On the process side, Intel 4 shipped with Meteor Lake, Intel 3 with Granite Rapids and Sierra Forest, and Intel 18A with Panther Lake. Intel has also made advanced packaging part of its foundry offering. However, Intel is still playing catch-up in servers. Several Xeon generations arrived years late and trailed contemporary AMD and Arm server CPUs in performance, efficiency, and core count. The process roadmap is back, but Intel does not hold the same process-technology leadership position it held prior to 10 nm. The introduction of gate-all-around nanosheets and backside power delivery are two of the biggest changes to transistor integration in a decade. Intel took on both changes at once: 18A paired its first RibbonFET with PowerVia in Panther Lake. Panther Lake is a substantial manufacturing milestone. Our cross-sections show how RibbonFET and PowerVia reshape local contacts and wiring, while the floorplans show where architectural consolidation and process choices save area. A sustained competitive lead depends on product performance, cost, yield, and the next implementation. The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page.. 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Carney also said that young people should be allowed to work, study and live where they want, on either side of the Atlantic. “Canadian membership of Erasmus+ would give your students and ours more opportunity to learn at some of the world’s top universities, to broaden their horizon and to build those lasting ties that will sustain our alliance,” he said.Limited exchanges with Canada are already possible, for example in the Erasmus Mundus strand of the scheme, which supports joint master’s programmes. 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She met recently with EU ambassadors to Canada to "see where the possibilities are, to signal that there is interest."Room for expansionLike other countries outside Europe that are associated to Horizon Europe, such as South Korea, Australia or Japan, Canada is not allowed to host European Research Council (ERC) grantees. However, Canadian universities hint they would like re-open that discussion. “Canada’s participation in Horizon Europe, the world's largest research funding programme, has been a big success,” said Robert Asselin, the chief executive of U15 Canada, an umbrella body for some of the country’s biggest research universities, in a statement. “Ensuring swift re-association to the next research programme, will be vital to maintain this momentum. We would welcome efforts to explore further opportunities to collaborate with European partners, such as through the European Research Council,” he said. Related articlesHow a new multilateral defence bank could boost innovationEurope’s independence hinges on innovation, von der Leyen saysBut so far, there are no details from the Commission on how von der Leyen’s proposal would boost Canadian access to the ERC or other sensitive research calls in Horizon Europe. And it is unclear how other non-European associated countries, such as New Zealand or Australia, would react if Canada was given better access than them. The same questions may arise closer to home. “How would a new category of associate member of the EU differ from Norway’s participation in EU programmes through the European Economic Area?” asked Jan Palmowski, secretary general of the Guild of European Research-Intensive Universities. “And how does this proposal for Canada change discussion for the UK, Norway and Switzerland for the next Multiannual Financial Framework?”Another area for discussion is how far Canadian organisations can participate in sensitive projects. “I would expect some of the most crucial issues at hand to be whether Canada can participate more closely and predictably in calls that are deemed sensitive on research security or EU preference grounds, on critical technologies, for instance,” Palmowski said. Canada’s participation in other parts of Horizon Europe, as well as the European Competitiveness Fund, might also be discussed, he added.Whatever the details, closer cooperation between the EU and Canada represents a “substantial” opportunity, according to Mattias Björnmalm, secretary general of the Cesaer university group. “Scientific excellence depends on talented people being able to work together, exchange knowledge and access complementary expertise and infrastructure,” he said. “A closer EU-Canada partnership would strengthen these conditions and provide greater certainty for long-term collaboration.”
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