SCROLL NEWS / DISCOVERY
Search headlines
Find the stories shaping the conversation.
Results for " flip " 585 found 🔀 AI-powered Shuffle
Samsung confirms a list of Galaxy phones and tablets getting Android 17 updates
Samsung has confirmed a list of Galaxy devices that are set to get its Android 17-based One UI 9 update...
SpaceX bear flips to big bull because of AI business. Analyst now sees 70% gain
PhillipCapital moved its rating on the Elon Musk giant to buy from sell, with the bullishness stemming from the company's AI business.
Democrats’ Projected Majority Grows as 19 More House Races Shift Away From the GOP
Republicans’ path to keeping control of the House has all but evaporated. The outstanding question is how large Democrats’ majority will be in 2027; in the best-case scenario, their party could enter the new Congress with more seats than they had after successfully flipping control of the House in 2006 and 2018.
Go behind stories of sport with legendary television producer
The Reed School of Media and Communications and the School of Sport Sciences will host sports producer John “Flip” Filipelli for “From the Control Room to the Corner Office: A Life Behind the Stories of Sport” at 5 p.m. Wednesday, Nov. 4, in the Media Innovation Center.
The top 10 Senate seats most likely to flip, less than two weeks before the midterms
With the November election in sight, Democratic excitement about the party winning control of the US Senate is running high, but it’s far from a sure bet.
The science of ‘dessert flipping’ — and how it can help you eat healthier
This simple trick focuses on what to add to your plate, not what to cut out.
Michigan Football Flips Toledo Recruit
With its passing game ranked near the bottom of FBS, Michigan just flipped a receiver from Toledo. #GoBlue
Here Are 7 Key Governor Races to Watch in the Midterms
Ohio, Alaska, and Texas could elect their first Democratic governors in decades. Republicans also have a shot at flipping a state's top executive.
Political Pulse: Anthony Kathol hopes to flip historically Democratic Senate seat in District 27
Republican candidate Anthony Kathol is running to flip a historically Democratic seat in District 27.
The past, present, and future share a show floor at Pinball Expo 2026
Flipping through the highlights in and around Pinball Expo 2026.
25 Shortfalls Cruise Entertainment Teams See on Formal Evenings Among Guests on Almost Every Voyage
Formal night is supposed to be the glamorous peak of a cruise: gowns on the staircase, blazers at the bar, photographers waiting under a chandelier. Then the lobby fills up, and the same slip-ups show up sail after sail. A bathing suit at the dining room door. A perfect gown with beach flip-flops peeking out ...
Samsung Galaxy Z Flip 8 Review: Iteration Overshadowed By Innovation
Samsung's Galaxy Z Flip 8 might be the best clamshell foldable smartphone on the market for the money, but it's just not much of an upgrade over the Z Flip 7.
Paul George Sets Celtics Franchise Record During Loss to Pistons
Detroit spent three quarters getting torched by Paul George, then flipped the opener in one run. #Pistons
Investors are piling into retail real estate. This Wheaton deal shows why.
Local real estate investment firm Core Acquisitions flipped the Rice Lake Square shopping center for $52.8 million just two and a half years after buying it.
How Democrats Might – or Might Not
Just a few months ago, it didn’t look feasible for Democrats to flip control of the U.S. Senate. Now it’s a real possibility – and this is how the party could get there. It’s all about the math. Today, Republicans control the chamber, 53-47. If Democrats can hold all four of their vulnerable seats,
A supercomputer is about to launch to the moon for the 1st time, aboard a rover named FLIP
And yes, it has AI.
Longtime Nevada Republican files complaint against GOP congressional candidate
The Federal Election Commission complaint against David Flippo cites reporting on his personal finances and campaign finance reports, and calls for an investigation.
2027 Wide Receiver Yuto Kawamura-Johnson Flips Commitment to Michigan
The Wolverines poach an explosive Florida playmaker from Toledo after a dominant visit. Boasting a staggering 24 yards per catch, the dynamic slot receiver brings elite vertical speed to Ann Arbor.
Bush family royalty backs Democrat in battle to flip Texas blue
Barbara Bush donated $2,500 to a PAC supporting James Talarico's Texas Senate race against Ken Paxton, using her real name in public FEC filings.
Using Math and Science to Tell a Story, Engineering Student Adds in Some Magic Too
‘The Enchanted Book’ combines elements of art and engineering to create an automated mechanism that flips pages, emits light, and offers sound
Politics: House Democrats preparing affordability agenda for potential majority win
Democratic leadership in the U.S. House of Representatives last week announced their plans for an agenda focused on tackling affordability, signaling confidence within the party that a flip of the
Nearly $2M more comes in for David Jolly against Byron Donalds fundraising juggernaut
Can a Democrat flip the Governor's Mansion without significant help from the national party?
Samsung's One UI update proves everything Google is doing with Pixel is completely wrong
Google gives my phone bugs while Samsung gives me fixes
The Blue Wave Could Reshape Politics in the South
Democrats could flip more than 400 legislative seats nationally and the governorships in Texas and Georgia.
How Luke Fickell, Wisconsin football retain recruits who could flip
After Kingston Allen's Ohio State offer, here's how Luke Fickell and Wisconsin try retaining verbal commits who have opportunities elsewhere.
Dem political newcomer Gray looks to unseat GOP freshman state Rep. Booth
District 35 in Orange and Osceola flipped from GOP to Democratic and back again in 2024.
In Iowa's competitive races, Senate candidates lean into healthcare issues
Democrats hoping to flip statewide and congressional seats have been campaigning hard on healthcare issues, hoping to win some needed Republican and independent votes. But what impact it may have on this year's close races is unclear.
‘You are enough’: BMX riders roll into South Division with mental health and anti-bullying message
South Division High School students watched professional BMX riders flip and fly while learning about resilience, kindness and personal growth.
Florida flips nation's No. 1 2027 receiver from Texas
The Gators get one of the biggest recruits in program history.
Democrats believe they have a real chance at flipping four states Trump won by double digits
For weeks, top Democrats in Washington have watched with cautious restraint as Republicans dumped millions into red states like Kansas and South Carolina to defend an increasingly shaky Senate map.
Science of food
What happens when a science class is disguised as a cooking class? At South Fayette High School, it means 45 students quickly signed up for an innovative new course that satisfies their graduation requirements and fills their stomachs. South Fayette Township School District’s new Science of Food course is giving juniors and seniors a hands-on […]
Justice weighs political future, talks Senate control
RAVENSWOOD – U.S. Sen. Jim Justice has enjoyed being in the Republican majority in the U.S. Senate, but the November midterm election could see control flipped to the Democratic Party
Democrats, with House majority, would go big on healthcare
House Democrats are promising immediate action on healthcare next year if they flip control of the chamber in the midterm elections. Party leaders say health costs are a foremost priority of their …
OPINION: Flippo's follies are making Nevada politics interesting again
OPINION: Flippo’s follies are making Nevada politics interesting again. Read more at The Nevada Independent.
Florida Hosts 4-Star WR in Attempt to Flip Commitment
Jon Sumrall and the Florida Gators are working to flip the commitment of a four-star wide receiver and have him join their 2027 class.
How West Michigan’s power players earned their first paychecks
Before they led companies and institutions, the Who's Who washed dishes, delivered newspapers, picked blueberries and flipped burgers.
Banijay Entertainment Introduces New US Gameshow Scrambled Up to Market
Media and entertainment powerhouse, Banijay Entertainment, today announces it has acquired the global format rights and finished tape rights to Scrambled Up, an all-new studio-based word game from Michael Eisner’s The Tornante Company; Keller/Noll, the prolific US format creators Cleve Keller and Dave Noll (Chopped, America Says, Flip Side); Crazy Legs Productions; and Playing Field […]
Reds May Have Stumbled Into a Valuable Piece at the Trade Deadline
By flipping rental Nate Lowe for utility prospect Juan Brito, Cincinnati may have secured a versatile switch-hitter ready to spark the 2027 roster after a blistering debut.
Democrats expand target list as polls point in their favor
Democrats are expanding the number of Republican-held House seats they hope to flip in November as polling moves in their favor ahead of the midterm elections. The Democratic Congressional Campaign Committee announced Monday that it added six candidates to its “Red to Blue” program, bringing the total to 46. The program provides candidates with strategic […]
Jeffries says House Democrats aiming to repeat 2018 sweep by flipping Trump districts
The Democratic Party is working to expand the map by going on offense in Republican-held districts, while President Donald Trump hits the trail in a red-state sprint to boost voter enthusiasm and shore up support from his base.
Can Washington Nationals Bounce Back Into Playoff Team in 2027?
Can the Washington Nationals flip the script to become a playoff contender in 2027?
The 10 Senate seats most likely to flip in 2026
Nearly four weeks out from Election Day, the Senate battleground map is growing after signs of improvement for Democrats in several red-leaning states.
Jeffries says House Democrats reaching to flip Trump districts in attempt to repeat their 2018 sweep
House Democratic leader Hakeem Jeffries says his party is on track to win back control of the House | WWJ Newsradio 950
Jeffries says House Democrats reaching to flip Trump districts in attempt to repeat their 2018 sweep
House Democratic leader Hakeem Jeffries says his party is on track to win back control of the House.
Could Democrats lose a Senate race in New Hampshire? A GOP candidate with a famous name tries to flip the seat
How Roy Cooper became Democrats’ best chance to flip a Senate seat
The former North Carolina governor is running in a state that for decades has more often preferred Republicans for federal office.
Person transported to hospital after vehicle overturns in crash on Business Loop 70
KOMU 8 crews at the scene saw a car flipped over after a crash on Business Loop 70 East on Saturday night.
David Jolly clears $1M raised in a week with help of matching funds, but can't keep pace with Byron Donalds
It's now or never if national Democrats want to flip the Governor's Mansion.
Who is Randy Villegas, the political newcomer trying to oust David Valadao from Congress and flip District 22 blue?
BAKERSFIELD, Calif. (KGET) – Although he’s relatively new to the political scene, Randy Villegas has been making waves in the legislative stage. Villegas, a self-described populist, is …
Who is Randy Villegas, the political newcomer trying to oust David Valadao from Congress and flip District 22 blue?
National Democrats target Eastern WA House race as ‘in play’
National Democrats see Washington's 5th Congressional District as an opportunity to flip a seat in the midterms in its pursuit of House control.
Is James Talarico about to flip Texas for the Democrats?
Jonathan Freedland speaks to James Henson, founder and executive director of the Texas Politics Project, about why a blue wave in the Lone Star state would be seismic
10 Democrat-held House seats Republicans could flip to save their majority
President Donald Trump's margins in redrawn districts fuel Republican hopes of flipping 10 Democratic House seats in the battle for Congress.
NRL backflip as entertainment act confirmed
The pickle has been put back into the burger with Peter V’landys revealing an unnamed act will perform at Sunday night’s grand final.
The Galaxy S25 series plus the Galaxy Z Fold7 and Z Flip7 are now getting stable One UI 9
The update has started rolling out to users in South Korea. Samsung announced the One UI 9 update for the S26 series – it started rolling out in South...
Analysis | The 9 Senate seats most likely to flip party control in November
Democrats need to flip several in red states to win back the Senate majority. Here are their best chances.
USA TODAY Sports Super 15 Midwest region football rankings, Week 7
See the latest Midwest Super 15 rankings as the high school football season prepares to flip the page to October.
CFP Bracketology: Week 4
Another chaotic week of college football saw eight ranked teams fall and a major shakeup around the bubble as the calendar flips to October. We are barely one-third of the way through the season and the playoff picture looks a lot different than it did a few weeks ago. My playoff picture after Week 4: […]
A Delightful New Way to Flip a Deep-Red District
Bobby Pulido isn’t your typical Democrat.
Rise Up Coffee opens a second location, new Flip's Pancake House, Just Us & Treats opens and more Quad-Cities business news
Rise Up Coffee opens second location, Flip's Pancake House opens in Milan, Just Us & Treats opens, and more Quad-Cities business news.
Where Republicans are playing offense ahead of the midterms
The outcome of the 2026 election will be determined primarily by how well Republicans play defense across the growing list of GOP-held House and Senate seats Democrats are targeting. But the GOP is also hoping to play offense by flipping some House and Senate seats Democrats now control.
Could Republicans flip New Hampshire Senate seat? Sununu's got a shot
Republicans, some national forecasters and pundits believe that the GOP has a chance to flip the state’s U.S. Senate seat.
Intel Panther Lake Teardown, 18A, BSPD, GAAFET, SemiAnalysis STEEL
Panther Lake debuts the first commercial implementation of backside power delivery (BSPDN), introduces Intel’s first iteration of gate-all-around (GAA) transistors, and showcases their advanced packaging capabilities with its Foveros-S assembly. With Panther Lake, Intel’s manufacturing arc has shifted from nebulous roadmaps to shipped silicon, a significant milestone on their long road back to competitive semiconductor manufacturing. To evaluate the extent of Intel’s comeback, we tore down Panther Lake. The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page. Our teardown traces 18A from its four-sheet RibbonFETs (Intel’s marketing name for GAAFETs) and gate stacks through contacts, frontside and backside wiring, and the bonded carrier. We explain how these material and integration choices improve gate control and reduce resistance, while adding capacitance, thermal resistance, and process complexity. Our measurements put Panther Lake’s 18A compute logic and TSMC N3E GPU logic at similar logic density. However, 18A does not lead TSMC N3P, N2 or Samsung SF2 in peak density. Panther Lake’s CPU cores are incremental updates, and the high-end GPU still uses TSMC N3E. Panther Lake assembles one compute tile, one GPU tile, and one I/O tile atop a passive base tile using Intel’s Foveros-S advanced packaging. Both compute tile variants use Intel 18A. The Xe3 GPU options are a 4-core GT1 tile on Intel 3 and a larger 12-core GT2 tile on TSMC N3E. Both I/O tile variants use TSMC N6. [1], [2] Our analysis centers on the PTL-U compute tile, both the 4-core and 12-core GPU tiles, as well as the 12-lane I/O tile. In conventional chips, power and signal are routed through the same frontside metal stack towards the device frontend. Power rails consume scarce routing resources near the transistors, while tall via stacks carry VDD and VSS from the coarse upper wires to local rails. Backside power delivery (BSPD) moves the main power network behind the transistor layer, to the backside, separating it from frontside signal routing. We covered BSPD and its impacts in 2024. [3], [4], [5] Intel’s BSPD implementation, branded as “PowerVia”, routes power through dedicated backside metals to nano-TSVs, which connect those rails to local source/drain (S/D) contacts. Implementing that separation requires Intel to build the interconnect stacks from both sides of the wafer. The frontside comprises the M0-M14 signal stack, while the backside comprises the BM0-BM5 power stack. M0 and BM0 are closest to the transistors. The nano-TSVs connect the two sides, but Intel patterns and etches each via from the front after forming the contacts. A narrow via runs from the side of the contact deep into the silicon substrate. Intel then completes the frontside signal metal stack, bonds the wafer to a carrier, flips it and removes the original substrate until the buried via tips are exposed. The backside metal stack is then deposited directly on the revealed vias. The nano-TSV and backside-via profiles taper in opposite directions because Intel forms them from opposite sides of the wafer. The transistor structures form the FEOL. Local contacts and nano-TSVs connect them to the wiring. M0 begins the frontside interconnect stack. The silicon carrier remains attached above the frontside interconnects. It supports the device wafer during substrate removal and backside processing and remains part of the finished chip’s thermal path. PowerVia removes the main power distribution from the congested frontside metals, routing supply through shorter and wider backside wires. Its lateral landing still occupies area in the standard cell, so it recovers less cell area than a direct backside contact. [3] Nano-TSVs beside the logic devices carry VDD or VSS from the backside power network, while signal connections continue upward through the frontside metals. Backside Interconnects Samsung SF2 data is included for comparison to Panther Lake’s within this article. SF2 is the incumbent GAA foundry node but lacks BSPD, serving as a useful reference to evaluate 18A. A full teardown of Samsung’s S26 products, processed on SF2, will be shared soon.Nanosheet-cut EDS comparison. The PowerVia supply path runs from the backside Cu rails through Mo-lined W nano-TSVs to the local transistor contacts. In this cross section, the tapered connection spans roughly 150 nm from the contact level to BM0. The Ta liner confines Cu and promotes adhesion to the surrounding stack; the AlOₓ etch stop controls the next dielectric etch above the rail. Dielectric beneath the ribbons electrically separates the devices from the backside wiring and removes the conducting silicon body below the channel. [6] AlOₓ serves as an etchstop (ES), enabling endpointing and protecting the underlying layers. Low-volatility aluminum fluoride reaction products resist the fluorinated plasma, allowing a thin AlOₓ film to protect the metal while the surrounding low-k dielectric is removed. [6], [7]. While the BM0 and layers above the M1 lines show double AlOx layers, Our SMIC N+3 teardown showed single AlOₓ layers. SMIC uses a simpler local AlOₓ substack, while the remaining cap and etch sequence provide the required landing protection. So why double layers? The closely spaced AlOₓ doublets provide two protected endpoints in the etch sequence. Intel documents an AlOₓ/SiN/AlOₓ stack that explains the benefit. The main dielectric plasma etch stops on the first AlOₓ film; a selective wet clear opens that film; a second plasma etch removes the intermediate SiN and stops on the second AlOₓ film. The final wet clear exposes the metal landing surface. SiN is the intermediate dielectric in Intel’s published example. [8] The second stop protects the metal through a cap breakthrough. Wide openings can etch faster than narrow ones, and etch depth varies across the wafer. Metal under an early-clearing opening would otherwise be exposed while other openings still need more etching. Staged protection widens the process window and reduces metal erosion, corrosion and void formation. [8] TSMC documents AlN/AlOₓ/SiOC/AlOₓ above Cu, with AlN blocking Cu diffusion, and a simpler AlN/SiOC/AlOₓ variant that omits one AlOx film. [9] Levels with different opening sizes, aspect ratios, pattern densities and cap materials need different etch margins. A double AlOx stop is useful where another protected endpoint justifies the added processing. The extra film adds formation, selective opening and cleaning steps, plus another set of interfaces to control adhesion, moisture, and stress. These blanket films are opened through the existing via pattern, so each film does not require another lithography mask. AlOₓ adds parasitic capacitance when it replaces lower-k dielectric; two thin AlOₓ films can nevertheless contain less AlOₓ than one thick film. Total thickness, placement, and theintermediate dielectric determine the electrical cost. Deposition chemistry also changes AlOx permittivity and residual hydroxyl content, which can oxidize the underlying metal. [7], [8], [10], [11] The backside stack separates into relatively fine BM0-BM2 wiring near the devices and coarser BM3-BM5 power distribution. The largest pitch increase occurs between BM2 and BM3. BM0’s pitch closely matches the logic-row height, fitting local power delivery to the cell rows. Higher levels aggregate current through larger conductors: routing density becomes less important than low resistance and current capacity as the network approaches the package. This hierarchy provides wide power wiring for the power delivery network without consuming scarce frontside signal-routing resources. [3] The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page. Frontside Interconnects Intel 18A combines Mo-lined W contacts and nano-TSVs with a separate backside Cu power network. Samsung SF2 keeps power on the frontside, using Ti-based contact interfaces and Ta-based barriers and Co liners around Cu wiring. In 18A standard-cell rows, backside power rails supply the devices through nano-TSVs within the cells, freeing frontside routing resources. Samsung’s M0 accommodates both power and signal connections. From the device toward M0, the connection runs through a Ti-based S/D interface, W contact fill, a Mo-lined W via, and the Cu M0 wire. Mo supplies a conductive nucleation and adhesion layer for W, replacing the resistive TiN liner used in conventional W integration. This increases the effective conduction volume within the feature while retaining W fill and its established polishing, cleaning and etching processes. Intel’s Mo/W patent describes this integration tradeoff. The nano-TSV uses the same Mo-lined W construction in the backside supply path. [12] The move from TiN to Mo is an incremental change. While a full Co or Mo fill can also reduce the volume lost to liners in very small features, it requires new integration schemes that increase complexity and risk. Cu remains attractive for wider wires due to its low resistance. As wires and vias shrink, the diffusion barrier consumes an increasing fraction of their cross-section. [12], [12], [14] Intel uses Co/Ru liners at M0-M1, Co at M2-M4, and Nb at M5-M9. The lower-level liners help Cu adhere and reduce void formation during trench fills. Applied Materials’ Endura has new thermal control that facilitate wetting process, so the thin film continuity is good enough that good capillary pressure will drive Cu atoms to the via bottom without voiding. Intel’s choice to use Nb is particularly interesting. Intel’s Nb patent describes a conductive diffusion barrier intended to reduce the barrier’s contribution to resistance relative to conventional Ta-based barriers, particularly at via bottoms where all current crosses the barrier. The patent pairs Nb in coarser levels with the option of lower-cost PVD processing. [15], [16] The upper metal layers support thicker barriers formed through physical vapor deposition (PVD) despite its worse coverage and uniformity. Meanwhile, the lower metal layers require thinner barriers deposited through conformal atomic layer deposition (ALD). Co/Ru adds another material interface and requires controlled deposition and Cu fill. Changing liners and barriers by metal layer allows Intel to optimize interconnect resistance, process complexity, and reliability. [15, 16] RibbonFET, Intel’s name for its gate-all-around FETs (GAAFETs), replaces the FinFET’s vertical fins with four stacked horizontal silicon nanosheets, allowing the gate to surround the channel on every side. The path to GAAFET begins with the planar transistor. A planar MOSFET places the gate above the channel between its source and drain. Pairing an NMOS with a PMOS transistor creates a CMOS inverter, in which the NMOS pulls the output low for a high input, and the PMOS pulls it high for a low input. The gate must retain electrostatic control of the channel to ensure clean switching. As gate lengths shrank, the drain began to compete with the gate for that control, increasing off-state leakage. Electrostatic control was restored through an architectural evolution that raised the channel into a vertical fin and wrapping the gate around three sides. Called “FinFET”, this new architecture packed more effective channel width into a smaller footprint. Further scaling made it harder to maintain both drive current and leakage within smaller cells, and reintroduced the same problems planar MOSFETs faced. Nanosheet GAAFETs close the fourth side by replacing the vertical fin with a stack of horizontal nanosheets, each surrounded by the gate. The tighter electrostatic control suppresses leakage at shorter gate lengths while stacking adds effective channel width within the cell footprint. In a FinFET process, channel width changes in discrete steps as designers must add or remove whole fins. Nanosheet width can instead be adjusted continuously within the process’s design rules. Wider sheets increase drive current, while narrower sheets reduce capacitance at the cost of drive current. Intel 18A uses stacks of four nanosheets each and varies their widths across logic and SRAM. At the process level, adding more sheets to each stack increases effective channel width and drive current, but complicates fabrication. RibbonFET vs MBCFET Samsung began GAAFET production in 2022 with SF3E, following with SF3 and now SF2. Its ‘MBCFET’ provides a useful structural comparison with Intel’s first RibbonFET implementation. [17] STEEL is digging deeper into SF2, used in the Exynos 2600, and TSMC’s GAAFET N2, used in Apple’s A20 Pro, in upcoming newsletter articles. We’re throwing some teasers on X. Let’s compare Samsung SF2’s MBCFET with Intel 18A’s RibbonFET. Subscribe Even to the untrained eye, Intel’s extra nanosheet is obvious. Intel stacks four ribbons to Samsung’s three. Samsung’s sheets are much wider in these fields, so both sheet count and width matter to the available channel perimeter. Sheet width also changes which silicon surfaces carry current. On conventional (001) silicon, wide nanosheets emphasize the broad top and bottom surfaces, favoring electron transport; the larger sidewall contribution in a narrow sheet favors hole transport. Thinner sheets improve gate control but increase confinement and scattering. This makes width and thickness part of the NMOS/PMOS balance, alongside strain and threshold voltage. [18], [19] GAAFET designs like 18A use different work-function-metal (WFM) stacks for NMOS and PMOS. Around each ribbon, a thin SiOx interfacial layer separates the silicon channel from the HfOx high-k dielectric, with La providing dipole tuning and the WFM wrapping the dielectric. NMOS uses a TiAl-based stack, while PMOS uses TiN WFM. W fills the remaining gate trench, providing a lower-resistivity path where the work-function layers are no longer needed. In this field, the PMOS stacks leave room for W between ribbons, while the NMOS stacks occupy more of those gaps. A silicon-based dielectric marks the P/N boundary, allowing the PMOS and NMOS gates, sharing the same gate trench, to be processed sequentially. Fast logic paths, retention circuits, and SRAM need a family of threshold options. Changing threshold without substantially changing device dimensions, capacitance or fabrication complexity is valuable. FinFET processes typically use different work-function-metal stacks. In a four-ribbon GAA stack, the narrow sheet-to-sheet gap limits how much WFM can fit around each channel. La in the gate dielectric creates interfacial dipoles at the SiOx/HfOx boundary, shifting effective work function and tuning threshold voltage. This gives Intel another control alongside its NMOS and PMOS WFM stacks. Low-threshold devices improve critical-path drive; higher thresholds reduce leakage elsewhere. Dipole tuning is especially useful in GAA because it changes threshold without consuming the narrow intersheet gap with thicker WFM. Precise control of La incorporation, diffusion and interface quality has long been a challenge, limiting viability in high volume production but is now seen from every leading-edge foundry. Intel’s patent describes depositing a dipole-forming oxide above HfOx and annealing it toward the interfacial oxide before completing the work-function and fill metals. This separates threshold tuning from the space available for metal. Newer research addresses the thermal cost: imec’s 2026 dipole-middle research inserts the shifter between two HfOx depositions, shortening the diffusion path while protecting SiOx during patterning. [20], [21]Matched-cut EDS, Intel 18A (left) vs. Samsung SF2 (right). Intel retains raised source/drain epi beneath its contacts, while Samsung recesses W deep into the epi to form a V-shaped Ti-lined interface. The deeper contact increases metal-to-semiconductor area and shortens the current path from the lower sheets, reducing contact and spreading resistance. It also removes epi volume and brings the contact etch closer to the channel ends. Retaining more epi preserves the material available for strain transfer, especially from SiGe into PMOS. These geometries balance contact access against stress engineering and etch margin. [22], [23] Samsung stacks three sheets to Intel’s four ribbons, and both processes use sheet width to tune drive strength. In our Samsung cross-sections, widths range roughly from 19 to 30 nm in the NPU rows and 37 to 50 nm in the CU cell. The Samsung nanosheets taper, with the widest sheet at the bottom and the narrowest at the top. Both processes use HfOx gate dielectric and Ti-based work-function stacks, with Al in the NMOS stack. In the Samsung devices shown here, the dielectric and WFM occupy the intersheet gaps, leaving W above the top sheet. Intel’s PMOS stack leaves more room between ribbons, and W fills those gaps while the thicker NMOS stack leaves W mainly in the upper trench. Gate-stack EDS maps. The W between Intel’s PMOS ribbons provides a conductive path close to the lower gates. Where WFM fills the entire gap, the gate still surrounds the channel, but voltage reaches it through the more resistive work-function films. Thinner WFM and dipole tuning preserve room for low-resistivity fill; Mo and Ru are alternative fill metals being developed for further scaling. [24] A masked, sequential WFM flow explains the different gate heights and inter-nanosheet fill. The proposed sequence below shows how separate NMOS and PMOS work-function steps produce that geometry. Enabled by the BSPDN process, Intel replaces the dense-logic silicon subfin with dielectric, removing the parasitic conduction path below the ribbons and reducing substrate-related capacitance. A retained silicon body as in classical, non-SOI, planar and FinFET designs needs junction and punchthrough-stop engineering to suppress leakage. Dielectric isolation makes that leakage less sensitive to the subfin doping profile but adds removal and fill steps. It also weakens the direct thermal path through silicon, making the contacts, metal stacks and package more important for heat extraction. [24], [26] Fluorine is concentrated around selected Intel device structures in the maps. WF6 is a standard precursor for W nucleation and fill, while barrier films protect adjacent dielectrics from fluorine attack. Low-fluorine W processes reduce the residual-F burden. Chloride-based precursors avoid introducing F during W deposition, but require control of chlorine attack, nucleation and fill quality. The integration target is a continuous, low-resistance W path with a thin protective liner and minimal chemical damage to the surrounding stack. [20], [27], [28] The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page. We measured cell height, gate pitch, metal geometry, and ribbon dimensions at the XTEM sites shown below. The tables group these dimensions by site and device polarity. Our “sheet cuts” cross the silicon channel and show the ribbons end-on. “gate cuts” run along the channel through successive gates. The 18A logic cell dimensions point to a five-track logic library while the N3E and Intel 3 cell dimensions evidence a seven-track logic library. The DDR-PHY uses wider M0 wires and much larger spacing than core logic. That trades routing density for lower wire resistance and weaker coupling between neighboring nets. The geometry suits the current delivery and coupling requirements of analog, clock, and I/O circuitry. PowerVia lets 18A combine a compact cell height with wider M0 geometry by moving the main power rails off the signal-routing tracks. That relaxes local wire scaling while preserving a small cell footprint. Cell height and gate pitch set the geometric density; pin access and routability determine how much of it a real block can use. [29] The biggest takeaway from our gate-pitch measurements is that Intel 18A compute logic and TSMC N3E GPU logic have similar density in the Bohr representative-cell model. The 18A example is 18.6% denser than the Intel 3 GPU example. Gate pitches are nearly identical across the three sites, so cell height drives most of the difference. The Bohr model combines a four-transistor NAND2 spanning three gate pitches and a 32-transistor scan flip-flop (SFF) spanning nineteen pitches, weighting their densities 60:40. The sensitivity column shows how independently changing cell height and gate pitch by ±1 nm changes the result. This compares representative cell geometries; whole-die density also depends on cell mix and placement. The 18A P-core gives M0 substantially more metal cross section than the N3E vector engine. Treating each profile as a trapezoid gives 2.63 times the area per line and 1.84 times the area after normalization by routing pitch. The larger section reduces the geometric contribution to line resistance and lowers current density for a given current. Taller and wider wires also add capacitance, so circuit delay depends on the balance of resistance and capacitance. The DDR-PHY has less metal area per routing width than the 18A core fields, while remaining above N3E. [30] Area = height × (top CD + bottom CD) / 2, including liners. Area/pitch normalizes by routing width. Taper is the symmetric sidewall angle from vertical, with the largest angle belonging to the DDR-PHY. Compute tile The measurements show how ribbon dimensions and gate-stack geometry vary across the compute tile and between NMOS and PMOS to balance channel drive, gate load and the space needed for the dielectric/WFM stack across logic, SRAM and the DDR-PHY. Width mainly changes available channel perimeter; thickness also changes electrostatic control and carrier confinement. Gate-stack thickness then determines the space left for low-resistivity fill P-core and LP E-core logic Both the P-core and LP E-core use multiple nanosheet widths. Widths are measured on high-magnification XTEMs while wider-field images demonstrate additional width choices within the LP E-core. Multiple widths are expected even within an LP E-core. Timing-critical paths, buffers and cells with different fanout need different drive strengths. The lower-magnification fields show this width diversity beyond the sites quantified in the table. L2 and L3 SRAM GAA gives SRAM designers another way to balance the pull-up (PU), pass-gate (PG), and pull-down (PD) transistors. FinFET bitcells set device strength through fin count while GAA adds nanosheet width as a sizing knob. In a 6T SRAM cell, a strong pull-down relative to the pass-gate limits read disturbance, while a strong pass-gate relative to the pull-up improves writability. During a write, the pass-gate and write driver pull the node storing “1” below the inverter trip point. During a read, the pull-down holds the node storing “0” low. Bias, threshold voltage, mismatch and assist circuitry set the remaining margin. FinFET high-current cells commonly use a PU:PG:PD fin-count pattern of 1:2:2, a device-sizing ratio rather than a current ratio. Ribbon width lets Intel balance SRAM strengths without adding whole fins. The L2 cell uses its narrowest ribbons for PU and widest for PD, improving writability and read stability respectively. Intel’s disclosed HCC operates without assist; its denser HDC uses negative-bitline write assist. Pulling the selected bitline briefly below ground increases pass-gate overdrive so it can overpower the pull-up at lower supply voltage. That buys density and low voltage writability at the cost of boosting circuitry, switching energy, and additional voltage stress that must be controlled. [31], [32] Four rectangular ribbons give the perimeter = 8 × (width + thickness), before corner rounding. PG/PU is 1.49 and PD/PG is 1.16. The L3 structures closely resemble L2 in layout and cell height. Fewer L3 nanosheet widths are tabulated because fewer high-magnification images were available. DDR PHY The DDR-PHY trades density for controlled analog behavior and reliable off-chip signaling. It contains drivers, receivers, delay circuits, and calibration logic that set drive strength, sampling time, and voltage margin. Repeated four-sheet devices with similar widths fit the use of regular transistor units for matching and programmable drive. Its wider local wiring provides room for current delivery and separation of sensitive signals, while consuming more area than a dense core-logic grid. The layout serves the memory channel’s electrical requirements as well as digital logic density. [33] The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page. Intel 3 GPU devices Vector engine logic Intel 3’s XVE logic uses two-fin PMOS and NMOS devices with power rails in M0. Its cell height and M0 pitch give a seven-track geometry, two tracks more than the 18A logic. One-fin groups also appear among the two-fin devices. Intel 3 L2 SRAM The Intel 3 L2 SRAM uses the familiar HCC sizing pattern: one PU fin, two PG fins, and two PD fins. N3E GPU devices Vector engine logic The N3E XVE field contains repeated two-fin devices with seven-track cell geometry. N3E remains a FinFET process, giving Panther Lake a direct FinFET-to-RibbonFET comparison. N3E L2 SRAM The N3E L2 SRAM uses the same PU:PG:PD fin-count pattern of 1:2:2. Panther Lake-U follows Lunar Lake’s floorplan quite closely. Both pair 4 P-cores with 4 LP E-cores and NPU, media and display engines in similar locations. Lunar Lake also uses Xe2, the direct predecessor to Panther Lake’s Xe3 GPU. This makes Lunar Lake the most direct basis for our comparisons. Arrow Lake differs in core count and uses the older Xe-LPG GPU architecture, so we only use it where it offers a more direct component-level comparison. Compute tile Panther Lake compute-tile floorplans remain sparse even months after launch. Intel 18A’s backside metal and dielectric stack must be removed without damaging the underlying structures before a clean transistor-level floorplan can be imaged. Most published die shots hide or heavily process the background, but we are quite proud of the die shot we achieved and are excited to show the work we have done. We measured the areas of the key components on the compute tile and compared them with their Lunar Lake predecessors on TSMC N3B. These help us to capture changes in block area and compare the two chips across process nodes and designs. Our total tile areas exclude the scribe-line area. The compute-plus-GPU subtotal below uses the PTL-U compute tile and GT1 GPU; it excludes the I/O tile and passive base. Individual block areas use the boundaries marked on the floorplans The compute-plus-GPU row is recomputed from the displayed PTL-U and GT1 areas. Component rows use their stated per-region counts and are not an additive partition of the whole tile. The P-core area remains almost unchanged between Lunar Lake and Panther Lake, despite L2 capacity increasing from 2.5 MiB to 3 MiB. Arrow Lake uses the same Lion Cove core as Lunar Lake but also has a 3 MiB L2. Cougar Cove fits 20% more L2 into the same P-core area. The larger private cache keeps more of each core’s working set close to its execution units, reducing access to shared L3 and DRAM. Extra capacity adds storage leakage and lookup energy, so designers balance it against avoided lower-level accesses. The shared P-core L3 cache also shrank by 14.8%. [2] Cougar Cove combines a similar footprint with Intel’s reported power-efficiency improvements. RibbonFET’s tighter channel control reduces leakage, while PowerVia reduces supply droop and allows tighter voltage guardbands. [1] Darkmont’s four-core LP E-core cluster is 5.0% smaller than Skymont’s on Lunar Lake, with most of the reduction in its L2 regions. The 1 MiB region shrank by 8.4% and the 1.5 MiB region by 14.9%. The tag arrays also use one fewer visible row. Tags identify which memory addresses the data array holds, so rearranging them changes the cache’s layout and wiring without requiring less data capacity. [2] The LP E-cores share one L2. This pools capacity and avoids duplicating all the cache machinery, but the four cores contend for its banks and bandwidth. Their separate cluster also keeps light work away from the performance cluster and its L3, allowing that larger domain to sleep. [1], [2] Cache area includes more than the storage cells. Tags identify each line, decoders select rows, sense amplifiers read the small bitline signal, and wires connect to the banks. Splitting an array into smaller sections shortens wordlines and bitlines, improving access speed, but duplicates peripheral circuits. Panther Lake’s smaller cache regions therefore reflect the complete memory implementation, including how much of each region is devoted to storage. [34] Unlike Meteor Lake and Arrow Lake, Panther Lake has no separate SoC tile. The NPU, LP E-cores, memory controllers, PHYs, media and display engines now share the compute tile. This removes an active die and keeps CPU memory traffic on one die. The cost is moving PHY and I/O-related circuitry onto 18A: drivers, receivers and analog circuits must still meet external voltage, loading and signal-integrity requirements, so their area does not shrink like dense digital logic. [1], [2] The biggest shrink comes from the NPU, which occupies 36.9% less area. NPU 5 consolidates the same total INT8 MAC count into half as many neural compute engines. Each of the three NCEs has a larger MAC array to make the complete NCE envelope 22.6% larger than an NPU 4 engine. Consolidation also halves the number of scratchpads and SHAVE DSPs, from 12 to 6. The MAC array handles matrix multiplication and convolution, while SHAVE executes vector and custom operations that fit the array poorly. [1], [2], [35] The paired floorplans identify each NCE envelope and its scratchpad, MAC, and SHAVE regions. Each measured MAC polygon is counted once per NCE in the area accounting below. The scratchpads store weights, activations, and intermediate results near the MAC arrays, allowing repeated use without fetching them again from DRAM. Halving their number delivers the largest measured area saving but leaves less local storage for the same total MAC count. Layers that no longer fit locally require smaller working tiles or more transfers of intermediate data. The benefit depends on keeping the enlarged arrays busy while managing that tighter storage budget. [36] NPU 5 also adds native FP8. Using half the operand width of FP16 reduces storage and transfer demand, helping workloads fit the smaller local memory budget. Lower precision and format-dependent range make scaling and model validation part of deployment. Hardware activation functions further reduce work that would otherwise occupy the programmable DSPs. [1], [2] Microsoft requires an NPU to deliver at least 40 TOPS for Copilot+ PCs. Both Lunar Lake and Panther Lake meet this threshold, but Panther Lake uses significantly less silicon. GPU tiles Panther Lake is Intel’s first product with Xe3, its latest GPU architecture. It offers two different GPU tiles: a smaller GT1 tile with 4 Xe3 cores on Intel 3 and a larger GT2 tile with 12 Xe3 cores on TSMC N3E. Panther Lake allows us to compare the same GPU architecture across both Intel 3 and TSMC N3E. Wildcat Lake adds a third Xe3 implementation on Intel 18A. A future newsletter will detail Xe3 and its implementation differences across all three process nodes. GT2 scales Xe3 to a different physical layout, with render slices arranged vertically instead of GT1’s horizontal arrangement. Slice placement sets the distances to shared cache banks and the D2D interface. Those wires consume area and add delay, so scaling the number of Xe cores also requires a new balance of cache placement, routing and timing. [1] What’s immediately obvious is that the GT2 tile on TSMC N3E has much smaller Xe cores than GT1. These block areas include logic, caches, and routing. An Xe core on the GT1 tile is ~69% larger than one on Lunar Lake, and ~55% larger than one on GT2. Intel 3 therefore uses substantially more area per Xe core. The block-area gap exceeds the measured logic and SRAM density gaps, bringing routing, timing targets, cell mix, and floorplan allocation into the comparison. The measured vector/matrix engine region is almost unchanged between Lunar Lake and Panther Lake’s GT2 tile. Xe3 retains eight 512-bit vector engines and eight 2048-bit XMX engines per core. Its gains also come from feeding those engines more effectively: more resident threads hide stalls, and variable register allocation lets shaders trade registers per thread against the number of threads kept active. [1] The shared L1/SLM capacity increased by 33% from 192 KiB to 256 KiB, while its area increased only 5%, raising effective density by 27%. L1 retains reused cache lines, while software-managed SLM lets a thread group share data locally. Both reduce traffic to more distant memory. Allocating more SLM per group can also limit how many groups reside on a core at once. [1], [37] The GT1 tile carries 4 MiB of L2 against 16 MiB on the GT2 tile. GT1 divides its L2 cache into four 1 MiB banks, while GT2 uses eight 2 MiB banks. Each bank contains 128 macros, but each N3E macro stores 16 KiB, twice the Intel 3 macro’s 8 KiB capacity. The N3E macro is only 54% larger while holding twice as many bits, giving it 30% higher density: ~23.7 Mbit/mm² versus 18.3 Mbit/mm². Including bank-level circuitry, the gap widens to ~16.9 Mbit/mm² on GT2 versus ~10.4 Mbit/mm² on GT1. GT2 gains density with its macros storing more bits per unit area, and those macros occupy more of each cache bank. Larger macros spread decoder and sense-amplifier overhead across more storage, while a more compact bank layout reduces the share spent on control and routing. The compromise is longer wordlines and bitlines that carry more capacitance. [34] I/O tile Panther Lake uses two I/O tile variants, both fabricated on TSMC N6. The smaller one provides 4 PCIe 5.0 and 8 PCIe 4.0 lanes and serves lower-tier systems as well as those without a discrete GPU, while the larger one adds 8 PCIe 5.0 lanes, bringing the total to 20 lanes, for discrete-GPU connectivity. Panther Lake SKUs with the larger 10- or 12-Xe GPUs use the smaller I/O tile. [38] The smaller I/O tile adds a PCIe 4.0 block and a Thunderbolt block to Lunar Lake’s I/O layout, providing four additional PCIe 4.0 lanes and another Thunderbolt 4 port. Its repeated N6 blocks retain nearly identical areas and layouts. Reusing these proven PHYs and controllers avoids porting and requalifying external interfaces on 18A, where faster digital logic offers less benefit to circuits constrained by the off-chip link. [38] SemiAnalysis’s teardown lab (STEEL) dives deep into the world’s advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. We’re hiring technical experts from system to transistor and everywhere in between. Check out our Careers page. Panther Lake offers scalability and modularity through its disaggregated packaging that partition compute, GPU, and I/O silicon into separate tiles allowing for a suite of tile configurations. This partitioning makes the package part of Intel’s node economics as it determines how much leading-edge wafer area each product consumes, which functions can remain on other processes, and how much configuration freedom Intel can offer from a shared set of tiles. Furthermore, fabricating the compute and GPU tiles separately confines the new 18A process to the compute tile and allows graphics and I/O to use other, more established, and more cost-effective processes. For Panther Lake, the GPU and I/O tiles are assembled alongside the compute tile on a passive silicon base using Foveros-S. Intel’s current technology brief lists a nominal 36 µm pitch for Foveros-S. Through-silicon vias (TSVs) in the base connect the fine wiring above to the larger package connections below. The functional tiles sit side by side on that passive base in a 2.5D configuration. [39] Our cross-section through the compute and GPU tiles shows the package’s wiring hierarchy. Microbumps connect each active tile to the passive silicon base; its fine redistribution layer (RDL) carries the short, dense tile-to-tile links. TSVs carry connections through the base to the package substrate, which fans them out to the much coarser motherboard solder joints. The base supplies interconnect, while computation remains in the active tiles above it. [39] At the compute-tile edge, the higher-magnification inset shows a local microbump spacing of approximately 25.24 µm and a feature width of 12.33 µm. These local spacings are finer than Intel’s nominal Foveros-S value. The X-ray fields further confirm tighter neighboring bumps, consistent across every die-to-die area found on each tile. Additional X-ray analysis is offered after the paywall. Putting the memory controller beside the CPU removes the D2D transfer that CPU memory requests required in Meteor Lake and Arrow Lake. This avoids the extra transmitter, receiver, and link traversal, saving interface energy and latency. Panther Lake’s separate GPU still crosses a D2D link to reach DRAM, so its larger local caches also help contain package traffic. [1], [40] Smaller dies are less likely to contain a random fatal defect, and screening them before assembly prevents one bad tile from consuming a complete package of good silicon. Reuse also spreads design and qualification work across more products. Against those gains, Intel pays for the passive base, D2D circuits, extra bonding and test steps, and losses during assembly. Cost per working product across the portfolio captures the combined effect of wafer yield, reuse, test, and assembly. [29] Wildcat Lake packaging Intel launched Core Series 3, formerly Wildcat Lake, on 16 April 2026 for value mobile and edge systems. Wildcat Lake keeps 18A but removes the passive base and combines more functions on one die to simplify the package. The two products therefore reveal two distinct ways to commercialize the same leading-edge process. [41] Wildcat Lake’s 18A die combines up to two Cougar Cove P-cores, four Darkmont LP E-cores, two Xe3 cores and a smaller NPU. A separate platform-controller die supplies I/O, connected through UCIe, Intel’s first processor implementation of the standard. Consolidating graphics remove a tile boundary and the passive base, reducing assembly complexity for a modest-bandwidth value product. It also ties CPU and graphics scaling to the same die, giving up Panther Lake’s ability to swap in a much larger GPU. [42], [43] In July 2021, Intel CEO Pat Gelsinger set out an ambitious process roadmap aimed at regaining performance leadership by 2025, later described as five nodes in four years. Five years and one CEO later, Intel’s comeback story is not as unambiguously positive as Pat may have hoped. [44], [45] Intel once set the pace for process technology, bringing high-k metal gate technology and FinFETs into volume production years ahead of the rest of the industry. Its 22 nm FinFET process reached consumers with Ivy Bridge in 2012. [46] Intel’s integrated device manufacturing (IDM) model allowed its architects and process engineers to co-optimize products and processes. Starting with Sandy Bridge, Intel dominated x86, while AMD struggled with Bulldozer. That lead faltered at 14 nm and broke at 10 nm. Intel targeted a massive 2.7× density increase, but the node arrived years late and required several revisions before it could support Intel’s full lineup. This delay forced Intel to stretch 14 nm across six generations, while TSMC moved ahead in process technology and AMD recovered in x86. By 2019, Intel was still shipping 14 nm across most of its product stack, with its 10 nm client ramp focused on Ice Lake mobile processors. Meanwhile, TSMC was shipping N7 and N7+, and AMD’s Zen 2 compute chiplets used N7 to raise core counts and improve efficiency. Intel’s process failures were central to its decline, but unsound business decisions furthered their downward slide. Product delays compounded product mistakes, pushing client, server, and FPGA roadmaps off schedule. Several attempts to enter AI (Nervana and Gaudi) and networking (Tofino) also failed to establish lasting businesses. Intel’s recovery has focused on consumer CPUs and advanced packaging. Tiger Lake, Alder Lake, Lunar Lake and now Panther Lake have restored Intel’s consumer roadmap. On the process side, Intel 4 shipped with Meteor Lake, Intel 3 with Granite Rapids and Sierra Forest, and Intel 18A with Panther Lake. Intel has also made advanced packaging part of its foundry offering. However, Intel is still playing catch-up in servers. Several Xeon generations arrived years late and trailed contemporary AMD and Arm server CPUs in performance, efficiency, and core count. The process roadmap is back, but Intel does not hold the same process-technology leadership position it held prior to 10 nm. The introduction of gate-all-around nanosheets and backside power delivery are two of the biggest changes to transistor integration in a decade. Intel took on both changes at once: 18A paired its first RibbonFET with PowerVia in Panther Lake. Panther Lake is a substantial manufacturing milestone. Our cross-sections show how RibbonFET and PowerVia reshape local contacts and wiring, while the floorplans show where architectural consolidation and process choices save area. A sustained competitive lead depends on product performance, cost, yield, and the next implementation. The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page.. [1] Intel, “Intel Tech Tour 2025 Panther Lake recap,” Doc. 866361, 2025. Accessed: Sep. 14, 2026. [Online]. Available: https://cdrdv2-public.intel.com/866361/ITT_2025_Panther_Lake_Recap1.pdf [2] Intel, “Core Ultra processors Series 3 datasheet, volume 1,” Doc. 872188-001, Jan. 2026. Accessed: Sep. 14, 2026. [Online]. Available: https://cdrdv2-public.intel.com/872188/872188-001.pdf [3] N. Horiguchi and E. Beyne, “Backside power delivery: How to power chips from the backside,” imec Reading Room, Nov. 25, 2022. Accessed: Sep. 14, 2026. [Online]. Available: https://www.imec-int.com/en/articles/how-power-chips-backside [4] W. Hafez et al., “Intel PowerVia technology: Backside power delivery for high density and high-performance computing,” in Proc. IEEE Symp. VLSI Technol. Circuits, Kyoto, Japan, Jun. 2023, pp. 1–2, doi: 10.23919/vlsitechnologyandcir57934.2023.10185208. [5] K. Fischer et al., “Intel 18A platform technology featuring RibbonFET (GAA) and PowerVia for advanced high-performance computing,” in Proc. Symp. VLSI Technol. Circuits, Kyoto, Japan, Jun. 2025, pp. 1–3, doi: 10.23919/vlsitechnologyandcir65189.2025.11075006. [6] K.-F. Cheng, C.-L. Teng, H.-Y. Huang, and H.-C. Chen, “Metal oxide composite as etch stop layer,” U.S. Patent 12 176 247 B2, Dec. 24, 2024. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US12176247B2/en [7] S. W. King, “Dielectric barrier, etch stop, and metal capping materials for state of the art and beyond metal interconnects,” ECS J. Solid State Sci. Technol., vol. 4, no. 1, pp. N3029–N3047, 2015, doi: 10.1149/2.0051501jss. [8] A. V. Mule’, D. J. Towner, D. Seghete, C. R. Ryder, and A. A. Gonzalez, “Multi-layer etch stop layers for advanced integrated circuit structure fabrication,” U.S. Patent Appl. 20220102343 A1, Mar. 31, 2022. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US20220102343A1/en [9] C.-C. Wang and J. H. Wang, “Interconnect structure with dielectric cap layer and etch stop layer stack,” U.S. Patent Appl. 20230253247 A1, Aug. 10, 2023. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US20230253247A1/en [10] Y. J. Wu, K.-F. Cheng, C.-C. Lee, H.-K. Chang, and H.-Y. Huang, “Etch stop layer for interconnect structures,” U.S. Patent Appl. 20240332070 A1, Oct. 3, 2024. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US20240332070A1/en [11] M. G. Rainville, N. Shankar, K. S. Reddy, and D. M. Hausmann, “Deposition of aluminum oxide etch stop layers,” U.S. Patent Appl. 20180197770 A1, Jul. 12, 2018. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.justia.com/patent/20180197770 [12] J. S. Leib et al., “Conductive lines having molybdenum liner and tungsten fill for advanced integrated circuit structure fabrication,” U.S. Patent Appl. 20240429126 A1, Dec. 26, 2024. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.justia.com/patent/20240429126 [13] M. Naik, “Cobalt enables power and performance scaling at single-digit logic nodes,” Applied Materials, Dec. 17, 2018. Accessed: Sep. 14, 2026. [Online]. Available: https://www.appliedmaterials.com/us/en/blog/blog-posts/cobalt-enables-power-and-performance-scaling-at-single-digit-logic-nodes.html [14] Lam Research, “Breaking through AI’s invisible barrier with molybdenum,” Lam Research Newsroom, May 6, 2025. Accessed: Sep. 14, 2026. [Online]. Available: https://newsroom.lamresearch.com/molybdenum-metallization-ai-revolution [15] P. Yashar, G. Malyavanatham, and H. Vijwani, “Integrated circuit interconnect structures with niobium barrier materials,” U.S. Patent Appl. 20240112951 A1, Apr. 4, 2024. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US20240112951A1/en [16] Applied Materials, “Applied Materials unveils chip wiring innovations for more energy-efficient computing,” Applied Materials Investor Relations, Jul. 8, 2024. Accessed: Sep. 14, 2026. [Online]. Available: https://ir.appliedmaterials.com/news-releases/news-release-details/applied-materials-unveils-chip-wiring-innovations-more-energy [17] Samsung, “Samsung showcases AI-era vision and latest foundry technologies at SFF 2024,” Samsung Semiconductor, Jun. 13, 2024. Accessed: Sep. 14, 2026. [Online]. Available: https://semiconductor.samsung.com/news-events/news/samsung-showcases-ai-era-vision-and-latest-foundry-technologies-at-sff-2024/ [18] C. W. Yeung et al., “Channel geometry impact and narrow sheet effect of stacked nanosheet,” in Proc. IEEE Int. Electron Devices Meeting (IEDM), Dec. 2018, pp. 28.6.1–28.6.4, doi: 10.1109/iedm.2018.8614608. [19] S. Mochizuki et al., “Evaluation of (110) versus (001) channel orientation for improved nFET/pFET device performance trade-off in gate-all-around nanosheet technology,” in Proc. Int. Electron Devices Meeting (IEDM), Dec. 2023, pp. 1–4, doi: 10.1109/iedm45741.2023.10413854. [20] D. G. Ouellette et al., “Fabrication of gate-all-around integrated circuit structures having molybdenum nitride metal gates and gate dielectrics with a dipole layer,” U.S. Patent 12 051 698 B2, Jul. 30, 2024. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US12051698B2/en [21] imec, “Advancing the CFET-based device roadmap with novel integration modules and standard-cell architectures,” imec, 2026. Accessed: Sep. 14, 2026. [Online]. Available: https://www.imec-int.com/en/articles/advancing-cfet-based-device-roadmap-novel-integration-modules-and-standard-cell [22] A. Reznicek, X. Miao, C. Lee, and J. Zhang, “Wrap around contact for nanosheet source drain epitaxy,” U.S. Patent 11 302 813 B2, Apr. 12, 2022. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US11302813B2/en [23] J. A. Kittl, J. G. Hong, D. R. Palle, and M. S. Rodder, “Methods for varied strain on nano-scale field effect transistor devices,” U.S. Patent 9 978 833 B2, May 22, 2018. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US9978833B2/en [24] S. Gandikota et al., “Method of reducing metal gate resistance for next generation NMOS device application,” Int. Patent Appl. WO 2024/137272 A1, Jun. 27, 2024. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/WO2024137272A1/en [25] J. Zhang et al., “Full bottom dielectric isolation to enable stacked nanosheet transistor for low power and high performance applications,” in Proc. IEEE Int. Electron Devices Meeting (IEDM), Dec. 2019, pp. 11.6.1–11.6.4, doi: 10.1109/iedm19573.2019.8993490. [26] C. Yoo, J. Chang, Y. Seon, H. Kim, and J. Jeon, “Analysis of self-heating effects in multi-nanosheet FET considering bottom isolation and package options,” IEEE Trans. Electron Devices, vol. 69, no. 3, pp. 1524–1531, Mar. 2022, doi: 10.1109/ted.2022.3141327. [27] S. S. Pradhan, D. B. Bergstrom, J.-S. Chun, and J. Chiu, “Tungsten gates for non-planar transistors,” European Patent Appl. EP 3 506 367 A1, Jul. 3, 2019. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/EP3506367A1/en [28] L. Schloss and X. Ba, “Tungsten films having low fluorine content,” U.S. Patent 9 754 824 B2, Sep. 5, 2017. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US9754824B2/en [29] Intel Foundry, “Accelerating AI and HPC with advanced process and packaging technologies,” Doc. 367370-001US, Jun. 2026. Accessed: Sep. 14, 2026. [Online]. Available: https://www.intel.com/content/dam/www/central-libraries/us/en/documents/2025-11/intel-foundry-hpc-ai-brief.pdf [30] M. Lofrano, X. Chang, H. Oprins, and Z. Tokei, “Mitigating the thermal bottleneck in advanced interconnects,” imec, Sep. 28, 2023. Accessed: Sep. 14, 2026. [Online]. Available: https://www.imec-int.com/en/articles/mitigating-thermal-bottleneck-advanced-interconnects [31] S. Bair, “Intel at ISSCC 2025: Navid Shahriari invited talk, eight papers, forums, panelist & product details,” Intel Community, Feb. 19, 2025. Accessed: Sep. 14, 2026. [Online]. Available: https://community.intel.com/t5/Blogs/Tech-Innovation/Edge-5G/Intel-at-ISSCC-2025-Navid-Shahriari-Invited-Talk-Eight-Papers/post/1667592 [32] D. Chandra, E. Potladhurthi, D. R. S. Reddy, and K. S. Rengarajan, “Tunable negative bitline write assist and boost attenuation circuit,” U.S. Patent Appl. 20160203857 A1, Jul. 14, 2016. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US20160203857A1/en [33] Synopsys, “Advantages of firmware-based training in high-speed DDR IP,” Synopsys IP Technical Bulletin. Accessed: Sep. 14, 2026. [Online]. Available: https://www.synopsys.com/articles/firmware-based-training-ddr-ip.html [34] N. Muralimanohar, R. Balasubramonian, and N. P. Jouppi, “CACTI 6.0: A tool to understand large caches,” Hewlett-Packard Laboratories, 2009. Accessed: Sep. 14, 2026. [Online]. Available: https://users.cs.utah.edu/~rajeev/cacti6/cacti6-tr.pdf [35] Intel, “Intel Tech Tour 2024 Lunar Lake AI hardware accelerators,” Doc. 824436, 2024. Accessed: Sep. 14, 2026. [Online]. Available: https://cdrdv2-public.intel.com/824436/2024_Intel_Tech%20Tour%20TW_Lunar%20Lake%20AI%20Hardware%20Accelerators.pdf [36] Y.-H. Chen, J. Emer, and V. Sze, “Eyeriss: A spatial architecture for energy-efficient dataflow for convolutional neural networks,” in Proc. 43rd ACM/IEEE Annu. Int. Symp. Comput. Archit. (ISCA), Jun. 2016, pp. 367–379, doi: 10.1109/isca.2016.40. [37] Intel, “Introduction to the Xe-HPG architecture,” Doc. 758306, Nov. 4, 2022. Accessed: Sep. 14, 2026. [Online]. Available: https://www.intel.com/content/www/us/en/developer/articles/technical/introduction-to-the-xe-hpg-architecture.html [38] Intel, “Core Ultra processors Series 3 for the edge,” Doc. 855291. Accessed: Sep. 14, 2026. [Online]. Available: https://cdrdv2-public.intel.com/855291/Intel%C2%AE%20Core%E2%84%A2%20Ultra%20Processors%20Series%203%20for%20Edge%20Overview_2.pdf [39] Intel Foundry, “Foveros technology brief,” Doc. 366411-001US, Feb. 2026. Accessed: Sep. 14, 2026. [Online]. Available: https://www.intel.com/content/dam/www/central-libraries/us/en/documents/2025-07/foveros-25d-product-brief.pdf [40] D. Das Sharma, “UCIe: Building an open chiplet ecosystem,” UCIe Consortium, 2022. Accessed: Sep. 14, 2026. [Online]. Available: https://www.uciexpress.org/_files/ugd/0c1418_c5970a68ab214ffc97fab16d11581449.pdf [41] Intel, “Intel launches Intel Core Series 3 processors,” Intel Newsroom, Apr. 16, 2026. Accessed: Sep. 14, 2026. [Online]. Available: https://www.intel.com/content/www/us/en/newsroom/news/client-computing/intel-launches-intel-core-series-3-processors-changing-the-game-for-everyday-computing.html [42] Intel, “Core Series 3 launch press deck,” Apr. 2026. Accessed: Sep. 14, 2026. [Online]. Available: https://download.intel.com/newsroom/2026/Intel-Core-Series-3/Intel-Core-Series-3-Launch-Press-Deck.pdf [43] Intel, “Intel outlines architectures for agentic AI at Hot Chips 2026,” Intel Newsroom, Aug. 24, 2026. Accessed: Sep. 14, 2026. [Online]. Available: https://www.intel.com/content/www/us/en/newsroom/news/client-computing/intel-outlines-architectures-for-agentic-ai-at-hot-chips-2026.html [44] Intel, “Intel accelerates process and packaging innovations,” Intel Investor Relations, Jul. 26, 2021. Accessed: Sep. 14, 2026. [Online]. Available: https://www.intc.com/filings-reports/all-sec-filings/content/0001193125-21-224438/d199788dex991.htm [45] Intel, “Intel reports third-quarter 2021 financial results,” Intel Investor Relations, Oct. 21, 2021. Accessed: Sep. 14, 2026. [Online]. Available: https://www.intc.com/news-events/press-releases/detail/1505/intel-reports-third-quarter-2021-financial-results [46] Intel, “3rd generation Intel Core processors bring exciting new experiences and fun to the PC,” Intel Investor Relations, Apr. 23, 2012. Accessed: Sep. 14, 2026. [Online]. Available: https://www.intc.com/news-events/press-releases/detail/577/3rd-generation-intel-core-processors-bring-exciting
U.S. Presidents Cup Team Gets Steamrolled In Stunning Friday Sweep
The International Team flipped the Presidents Cup on Friday, sweeping all five Foursomes matches to seize a 7-3 lead over the United States at Medinah.
The Senate map is looking even better for Democrats. Here are races to watch.
The goal of keeping Democratic Senate seats and flipping four GOP seats once felt like a long shot. Now it's feasible.
Jays Edge Reds 6-5
For most of the night, this looked like a typically frustrating 2026 Blue Jays loss. The starting pitching wasn’t very good, the bullpen did enough to keep them in range, and while the offence produce traffic on the bases it failed to turn that into runs. Luckily, things flipped late. The offence woke up and […]
Cook Political Report sees Anna Paulina Luna, María Elvira Salazar in risky territory, opens CD 22 as a jump ball
2 GOP incumbents now sit in 'Lean R' territory, while an open race Republicans wanted to flip is a 'Toss Up.'
Decision Desk calls the Governor's race a toss-up. Kalshi traders have Byron Donalds at 77%
Traders still like Donalds and Ashley Moody. CD 22 is a coin flip.
Can Democrats flip the House? Here's the latest in key races
Democrats need a net gain of four seats to take control of the House. Here are five races to watch before the Nov. 3 elections.
AI Presents Science with a ‘Ship of Theseus’ Problem
Opinion | AI can replace each part of the scientific process, leaving the enterprise recognizable but devoid of human judgment.
Falcons – Packers instant recap: Making the Lambeau leap
It started off bad, and after the first two weeks of the season, that led many of us to brace for the worst. Michael Penix Jr. threw an interception, the team allowed a quick scoring drive for the Packers, and trouble seemed to be on the horizon. Then the switch flipped, the Falcons discovered what […]
How the fate of a rural hospital could help flip the House
In one Virginia race and others, Democrats are highlighting the rising costs of health care and possible closures of facilities, putting Republicans on defense.
Kentucky Gov. Andy Beshear pushes to flip a Republican-friendly House seat in test of his political reach
As the midterms near, potential 2028 presidential candidates are looking to prove their appeal in a range of House districts across the country. For Kentucky Gov. Andy Beshear, it’s all about his state’s 6th Congressional District.
Angry outbursts, slurs and firings: Tumult rocks a key Senate campaign
Democrats hope that Mary Peltola can flip a Republican Senate seat in Alaska. Former aides describe a campaign and congressional office marked by chaos.
Mary Peltola’s Campaign in Alaska Senate Race Is Rocked by Tumult, With Angry Outbursts and Slurs
Democrats hope that Mary Peltola can flip a Republican Senate seat in Alaska. Former aides describe a campaign and congressional office marked by chaos.
The calendar says it’s 2026, so why does it suddenly feel like 2028?
Summer’s swampy heat released its grip on Washington Tuesday as if someone had flipped a switch.
Is 50 the new 60?
Subscribe TL;DR: Younger generations are showing signs of worse health compared to earlier-born cohorts at the same age This backward “drift” is showing up both in mortality risk and chronic disease Worsening trends in obesity and diabetes are the most consistent signals Taking the long view, we’ve made astonishing gains in health and life expectancy in the last century. Global average life expectancy has more than doubled from 32 years in 1900 to 73 years in 2024. (But don’t forget, there were still old people when life expectancy was 32). As people lived longer, they also generally lived healthier along the way. It turns out that avoiding things that can kill you early, like malnutrition and lots of childhood infections, also keeps you healthier later in life. In a classic 2004 paper, Finch and Crimmins proposed that cohorts of children who benefited from fewer early life infections had less lifetime exposure to inflammation and cardiovascular disease later in life, accelerating mortality improvements at older ages. Poor nutrition in the womb has also been linked to a higher risk of later chronic disease. The upshot is that improvements in childhood health can pay dividends many decades later. The combination of better living conditions (nutrition, sanitation) and medical advances (antibiotics, vaccines, blood pressure meds, etc) meant that people’s healthy lifespan generally expanded, even as they lived longer. Aging researchers call this best-case scenario “compression of morbidity”—meaning we delay the onset of disease and disability even faster than the years of life we are adding. During my 20+ year research career, we could generally bank on the idea that younger generations would not only live longer but also keep getting healthier along the way. “60 is the new 50” as they say… Enter “Generational Health Drift” Sadly, this expectation of steady progress may be changing. You’ve probably heard that US life expectancy gains have slowed to a crawl in the past couple of decades. Mortality improvements are also slowing (though less dramatically) in many other high-income countries (you can read more about that in a review paper I wrote here). Mortality is a very blunt health measure, but it is often a good barometer for the broader population health trends happening underneath. And we are now seeing that younger generations may be in worse health at similar ages compared to earlier born cohorts. My collaborator Prof. George Ploubidis at University College London coined this worsening health in more recently born cohorts “generational health drift.” “Generational health drift” is bad news on multiple fronts. Most obviously, we don’t want our health progress to go backward. But the timing is also bad, since our populations are aging. In demographic terms, “population aging” means that the proportion of the population at older ages (i.e >65 years) is increasing. Fun demography fact: Current population aging is not due to the recent declines in the birth rates making the news, but declines in fertility decades ago, after the “baby boom.” As baby boomers reach older ages, the smaller cohorts behind them mean the percentage of older adults will increase. For example, the share of the population age 65 and older in the US increased from 12.4% in 2004 to 18.0% in 2024. This story of population aging was written long ago. Many worry that population aging will put pressure on health care and pension systems. But if people reach older ages in better health than in years past, those fiscal pressures would be less dire than projected. Healthy older people can also continue to contribute to society in many valuable ways, including paid work, caregiving, community service….even high political office 🤷. On the flip side, if younger generations reach retirement age in worse health and with more disabling conditions, this could magnify the societal challenge of population aging. Evidence for worsening generational health A recent paper that I LOVED in the Proceedings of the National Academy of Sciences by Dr. Leah Abrams and colleagues examined which birth cohorts (aka generations) were behind worsening US mortality. Behold the Lexis diagram (cue swooning demographers). Calendar time is on the x-axis, age on the y-axis. Birth cohorts can be followed over time as they age on the diagonal lines moving up and to the right. This figure plots the year-on-year % change in all-cause mortality at a given age. Green shading indicates mortality improvements over time, white is stagnation, and gray shading indicates worsening mortality. Following the diagonal line for those born in 1950, you can see a noticeable shift from green to gray that follows this cohort for most of their lives. This gray shading shows generally worsening mortality for the 1950 to 1959 birth cohorts compared to their predecessors across all ages. Concerningly for my GenX and elder millennial peeps, there was also a deterioration in mortality for birth cohorts born in the 1970s and 1980s, visible as dark gray areas at ages 30 to 45 during the 2010s. While some of these mortality changes reflect specific shocks such as the opioid epidemic, most deaths still occur from major causes of death such as cardiovascular disease and cancer. For cancer, the gray in the top left corner of the figure below reflects the legacies of smoking for older cohorts, followed by a period of green with improvements in cancer mortality as smoking rates declined. But the white/gray shading in the bottom right corner highlights a stagnation and reversal of the cancer trends, with cohorts born around 1970 to 1985 experiencing worsening cancer mortality. This deterioration was most noticeable for colon cancer mortality, possibly linked to obesity or dietary factors. Not just dying more, but less healthy along the way. A recent paper by Dr. Laura Gimeno of University College London (of which I am a co-author), found evidence that more recently born cohorts in Great Britain have stagnating or worsening health. A stylized picture of what“generational health drift” might look like: The review paper found: Rates of childhood overweight and obesity were highest among Gen Z. Rates of diabetes in the 40s almost doubled from 3.1% among the Baby Boomers to 5.9% in Generation X. Gen Z reported higher rates of poor mental health in adolescence compared to earlier-born groups. These UK results are consistent with studies showing worsening health across generations in the US as well. A 2021 US study found that more recently born cohorts had worse biological markers (like blood pressure and blood sugar) than earlier generations at the same age. A separate 2022 study of Americans aged 50 and over found that more recently born generations had a higher number of chronic diseases, with younger age of disease onset. A 2024 Lancet paper found that in the US, women born in 1945 had 33% obesity prevalence at age 50, rising to 48.2% for women born in 1970 turning 50. So what’s going on, and can we turn it around? We don’t have a definitive answer for what’s causing the deteriorating health of younger cohorts, but circumstantial evidence points to worsening trends in obesity and diabetes in both the US and UK. Remember that cohort trends reflect lagged effects of early environments, and younger generations have faced both earlier onset and more severe obesity across their lifetimes. Despite these very concerning trends, the future is not set in stone. We’ve reversed poor generational health trends before: drops in smoking are a major reason cancer and heart disease deaths fell so dramatically in recent decades. GLP-1 drugs may finally turn the tide against rising rates of obesity and diabetes, though it is still early days. But things could also get worse…for example from a return to higher levels of childhood infectious diseases that can have a lasting impact on health. See for example: [ ](https://jenndowd.substack.com/p/dont-you-forget-about-measles-the) [ Don’t You Forget About Me(asles): The Virus That Erases Immune Memory ](https://jenndowd.substack.com/p/dont-you-forget-about-measles-the) Jenn Dowd, PhD · March 24, 2025 [ Read full story ](https://jenndowd.substack.com/p/dont-you-forget-about-measles-the) Even as an optimist, emerging data on the “generational health drift” has my full attention. For most of my research career, we took it for granted that each generation would be healthier than the last. But if present trends continue, **50 could be the new 60….**and Gen Z celebrities will soon look older than Paul Rudd :). Stay well, Jenn Share the Health! If you found this post useful, please share it with a friend. Share
Can Democrats flip the Senate? Here's the latest in key races
Democrats need to gain at least four seats, and not lose any, to retake control of the Senate. Here are five races to watch in the final weeks before Nov. 3.
Bham firms trade Hoover apartments for $7M
A Birmingham-based firm flipped a Hoover apartment property after nine months of new management and renovations.
Drake, Don Toliver Flip Ella Langley's "Choosin' Texas" in 'FOMO' Film
Drake takes his Ella Langley fandom into the booth for 'FOMO.'
Yankees' Paul Goldschmidt Has Gone From Disposable to Indispensable
New York Yankees first baseman Paul Goldschmidt has flipped the script.
DL Kavarris Duncan flips his commitment from Tulane to Alabama
Alabama offered Winterboro, Ala. defensive lineman Kavarris Duncan before the Florida State game, and it didn't take the Tide long to flip him from Tulane. He is living out his dream.
Rangers flip narrative as McInnes makes mark
Consecutive Old Firm derby wins show Derek McInnes is starting to make his mark at Rangers after a mortifying start.
Optimism and tight polls: Can Florida Democrats flip Sunshine State blue in 2026?
Florida Democrats gathered in Miami with renewed hope as tight polls signal potential turnarounds in key 2026 midterm races.
Special Teams Flip Script For Mizzou in Win Over Troy
Special teams had a quick turnaround from last week’s performance. Can MU get a similar turnaround in its other phases?
1969 Elvis Presley Gem Was the Flip Side of a No. 3 Billboard Smash
While 'In the Ghetto' dominated the radio, its soulful B-side proved to be a masterpiece of its own.
1969 Elvis Presley Gem Was the Flip Side of a No. 3 Billboard Smash
While 'In the Ghetto' dominated the radio, its soulful B-side proved to be a masterpiece of its own.
Can Democrats flip House seat in SC? Navy official fired by Hegseth faces Charleston councilwoman.
Democrats think they have a shot at picking up South Carolina’s 1st Congressional District in the Lowcountry after two straight thumpings from retiring U.S. Rep. Nancy Mace.
Early voting begins in US midterm elections that could flip control of Congress
In Fairfax, Virginia, 18-year-old Sanya Singhal said she voted early to “try to be the first early voter.” In Henrico County, Laura Bland said she cast a ballot to send “a signal that we’re still here.”
Early voting begins in US midterm elections that could flip control of Congress
In-person voting for this year’s midterm elections is underway. Friday marked the start of early voting in Virginia, ushering in the final six weeks for Americans to decide which party
Early voting begins in U.S. midterm elections that could flip control of Congress
In-person voting for this year’s midterm elections began Friday, ushering in the final six weeks for Americans to decide which party they trust to lead Congress through a cost-of-living crisis, a prolonged war in Iran and other pressing issues.
One UI 9 global release dates for some Galaxy devices revealed
Samsung finally started rolling out the One UI 9.0 update for the Galaxy S26 series a few days ago, following months of beta testing. The update, which debuted
Early voting begins in midterm elections that could flip control of Congress
Friday marked the start of early voting in Virginia. Voters in a handful of other states can cast absentee ballots in person.
Democrats aim to flip Iowa's U.S. Senate seat in an increasingly competitive race
The race for U.S. Sen. Joni Ernst's open seat is getting increasingly competitive. Democrats hope it's one of the Senate seats they can flip to gain control of the chamber.
Earth's Magnetic Field Flipping Heard as a Sound Is an Unnerving Horror
Just listen to it.